Patents Assigned to Gosudarstvenny Nauchno-Issle-Dovatelsky I Proektny Institut Redkometallicheskoi Promyshlennosti "GIREDMET"
  • Semiconductor structure sensitive to pressure
    Patent number: 4141025
    Abstract: A semiconductor pressure sensing device comprises a solid made as a AB.sub.1-x C.sub.x semiconductor structure composed of two semiconductor materials AB and AC and a means for measuring variations of electrical resistance of the solid in response to changes of the pressure applied thereto, which is electrically connected to the solid, the semiconductor structure having a first group of layers possessing one value of x and a second group of layers possessing a second value of x and alternating with the layers of the first group.
    Type: Grant
    Filed: March 24, 1977
    Date of Patent: February 20, 1979
    Assignee: Gosudarstvenny Nauchno-Issle-Dovatelsky I Proektny Institut Redkometallicheskoi Promyshlennosti "GIREDMET"
    Inventors: Izidor K. Bronshtein, Vadim N. Maslov, Elena M. Kistova, Oleg E. Korobov, Natalya I. Lukicheva, Viktor V. Myasoedov, Jury V. Sokurenko, Evgeny V. Sinitsyn, Elena S. Jurova