Abstract: Systems and methods are provided to promote uniform thermal environment to feedstock material (e.g., silicon) in a crucible of a crystal growth apparatus are provided herein. More specifically, a heating system may be arranged in the crystal growth apparatus so as to include at least a first and second heating element which are configured to distribute heat axisymmetrically to the feedstock material and the second heating element that is configured to distribute heat symmetrically to the feedstock material to thereby provide uniform heat distribution to the feedstock material in the crucible to allow for increased consistency in crystal ingot quality.

Abstract: A high temperature furnace comprising hot zone insulation having at least one shaped thermocouple assembly port to reduce temperature measurement variability is disclosed. The shaped thermocouple assembly port has an opening in the insulation facing the hot zone that is larger than the opening on the furnace shell side of the insulation. A method for producing a crystalline ingot in a high temperature furnace utilizing insulation having a shaped thermocouple assembly port is also disclosed.

Abstract: The present invention provides chucks having a well that supports rods produced during chemical vapor deposition. The chucks can utilize slats and windows around the well up to which the rod can grow and become supported.

Abstract: The systems and method of the invention involve hydrochlorination by providing feed streams with suitable reaction conditions through reactant stream conditioning systems and components. The conditioning systems facilitate vaporization of silicon tetrachloride in gaseous hydrogen to produce a reactant stream comprising hydrogen that is saturated with silicon tetrachloride. Saturation can be effected without the use of superheated steam or hot oil by utilizing saturated steam that is less than about 15 bar. The saturated reactant stream can be further heated to reaction conditions that effect conversion to trichlorosilane.

Abstract: The invention can provide or facilitate energy recovery operations during semiconductor processing operations by utilizing a bell jar having a radiation shield thereon that is comprised of a mediating layer comprising nickel disposed on an interior surface of the bell jar, and a reflective layer which can comprise a gold layer that is disposed on the mediating layer. The reflective layer has an emissivity of less than 5% and, more preferably, the reflective layer has an emissivity of less than about 1%. Heat from the reaction chamber can be used to reduce the heating load of one or more other unit operations.

Abstract: A method for making a large surface area silicon filament for production of bulk polysilicon by chemical vapor deposition (CVD) includes melting silicon and growing the filament from the melted silicon by an EFG method using a shaping die. The cross sectional shape of the silicon filament is constant over its axial length to within a tolerance of 10%. In embodiments, a plurality of identical and/or dissimilar filaments are grown simultaneously using a plurality of shaping dies. The filaments can be tubular. Filament cross sections can be annular and/or can include outwardly extending fins, with wall and/or fin thicknesses constant to within 10%. Filaments can be doped with at least one element from groups 3 and 5 of the Periodic Table. The filament can have a length equal to a length of a specified slim rod filament, and a total impedance not greater than the slim rod impedance.

Abstract: A method for making polycrystalline silicon from a gas comprising at least one silicon precursor compound is disclosed. The method can be effected from a gas comprising a polycrystalline silicon precursor compound in a chemical vapor deposition system by establishing a first flow pattern of the gas in a chemical vapor deposition reaction chamber, promoting reaction of at least a portion of the at least one precursor compound from the gas having the first flow pattern into polycrystalline silicon, establishing a second flow pattern of the gas in the reaction chamber, and promoting reaction of at least a portion of the at least one precursor compound from the gas having the second flow pattern into polycrystalline silicon.

Abstract: A crystal growth apparatus includes a crucible arranged on a support mechanism, and at least two plates formed below the support mechanism and movable in a coordinated manner to form a symmetrical aperture centered with respect to an ingot being formed in the crucible, and a drive mechanism for driving the plates with one degree of freedom. The plates open in a plurality of discrete positions to form an aperture that is load centered with respect to the ingot being formed, in order to promote directional solidification of the ingot being formed, and thus achieve a desired convex profile of the ingot.

Abstract: A chemical vapor deposition reactor system includes one or more tube filaments connected to a bridge, each tube filament being connected to a chuck. The chuck-to-filament connection can include a seed formed on an end of the tube filament, the seed being connected to a protrusion of the chuck, or the filament may be formed directly onto the chuck. For the bridge-to-filament connection, a flat cross bridge or a rectangular bridge is connected with corresponding openings in the filament. Use of these connections can maintain electrical connectivity and thus resistive heating of the tube filaments during operation of the reactor system.

Abstract: Systems and methods for arranging a heating element in a crystal growth apparatus include connecting elements such as heater clips used to interconnect one or more heating components of the heating element, and to connect at least one of the heating components with the crystal growth apparatus. The heating components can be electrically and thermally coupled, and can be connected via the same circuit, in order to simplify control of the heating element.

Abstract: A reaction chamber system, and related devices and methods for use in the system, are provided in which reduced power consumption can be achieved by providing a thin layer of gold on one or more components inside a reaction chamber. The reaction chamber system can be used for chemical vapor deposition. The gold coating should be maintained to a thickness of at least about 0.1 microns, and more preferably about 0.5 to 3.0 microns, to provide a suitable emissivity inside the reaction chamber, and thus reduce heat losses.

Abstract: Systems and methods for the production of polysilicon or another material via chemical vapor deposition in a reactor are provided in which gas is distributed using a silicon standpipe. The silicon standpipe can be attached to the reactor system using a nozzle coupler such that precursor gases may be injected to various portions of the reaction chamber. As a result, gas flow can be improved throughout the reactor chamber, which can increase the yield of polysilicon, improve the quality of polysilicon, and reduce the consumption of energy.

Abstract: The present invention is directed to systems and methods of synthesizing trichlorosilane. The disclosed systems and methods can involve increasing the concentration of the solids in the slurry to recover or separate the volatilized metal salts and reduce the obstructions created by the solidification of the metal salts in downstream operations of the during trichlorosilane synthesis. Rather than heating to raise the temperature to vaporize chlorosilane compounds, and subsequently condensing the volatilized chlorosilane compounds, the present invention can involve increasing the solids concentration in the slurry stream by utilizing a non-condensable gas, such as hydrogen, to volatilize the chlorosilane components, which can consequently promote evaporative conditions that can reduce the slurry temperature. The lower slurry temperature results in a lower volatility of the metal salts, which reduces the likelihood of carryover to downstream unit operations.

Abstract: A method for using substantial quantities of silicon powders as charge and processing it to produce a high quality silicon ingots suitable for photovoltaic use is disclosed. In a fused silica crucible, silicon feedstock containing more than about 5% by weight silicon powder is charged. The crucible with the charged silicon feedstock is placed into a furnace chamber and a vacuum is drawn to remove air. The vacuum is applied slowly. Then, the furnace chamber is backfilled with argon gas and heated to form molten silicon. Afterward, the molten silicon is solidified and annealed to form a multicrystalline silicon ingot.

Abstract: A method for making bulk silicon material consisting of silicon pellets for making silicon ingots from an agglomerate-free source of high purity, ultra fine silicon powder includes feeding a controlled amount of silicon powder into a pellet die and dry compacting the powder at ambient temperature with pressure to produce a pellet that has a density of about 50-85% of the theoretical density of elemental silicon, a weight within a range of about 1.0 gram to about 3.0 grams, a diameter in the range of 10 mm to 20 mm and preferably of about 14 mm, and a height in the range of 5 mm to 15 mm and preferably of about 10 mm.

Abstract: A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional as a mold cavity for receiving molten silicon; removing or reducing a prior applied release coating from the interior surface until a uniformly smooth finish is achieved; coating the interior surface with a first layer of release coating comprising silicon nitride; coating the interior surface with a second layer of release coat comprising silica suspended in water; coating the interior surface with a third layer of release coat comprising silicon nitride; curing the release coat on said crucible; casting a silicon ingot in the crucible; and then repeating the prior steps multiple times.

Abstract: A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional as a mold cavity for receiving molten silicon; removing or reducing a prior applied release coating from the interior surface until a uniformly smooth finish is achieved; coating the interior surface with a first layer of release coating comprising silicon nitride; coating the interior surface with a second layer of release coat comprising silica suspended in water; coating the interior surface with a third layer of release coat comprising silicon nitride; curing the release coat on said crucible; casting a silicon ingot in the crucible; and then repeating the prior steps multiple times.

Abstract: A method for using substantial quantities of silicon powders as charge and processing it to produce a high quality silicon ingots suitable for photovoltaic use is disclosed. In a fused silica crucible, silicon feedstock containing more than about 5% by weight silicon powder is charged. The crucible with the charged silicon feedstock is placed into a furnace chamber and a vacuum is drawn to remove air. The vacuum is applied slowly. Then, the furnace chamber is backfilled with argon gas and heated to form molten silicon. Afterward, the molten silicon is solidified and annealed to form a multicrystalline silicon ingot.

Abstract: A bulk silicon material for making silicon ingots, consisting of silicon pellets, and a method for making the pellets from an agglomerate-free source of high purity, ultra fine silicon powder by feeding a controlled amount of silicon powder into a pellet die, and dry compacting the powder at ambient temperature with pressure to produce a pellet that has a density of about 50-85% of the theoretical density of elemental silicon, a weight within a range of about 1.0 gram to about 3.0 grams, a diameter in the range of 10 mm to 20 mm and preferably of about 14 mm, and a height in the range of 5 mm to 15 mm and preferably of about 10 mm.

Abstract: A bulk silicon material for making silicon ingots, consisting of silicon pellets, and a method for making the pellets from an agglomerate-free source of high purity silicon powder by feeding a controlled amount of silicon powder that is free of intentional additives and binders into a pellet die, and dry compacting the powder at ambient temperature with pressure to produce a pellet that has a density of about 50–75% of the theoretical density of elemental silicon, a weight within a range of about 1.0 gram to about 3.0 grams and preferably of about 2.3 grams, a diameter in the range of 10 mm to 20 mm and preferably of about 14 mm, and a height in the range of 5 mm to 15 mm and preferably of about 10 mm.