Abstract: The mass spectrometer includes a sample stage, an irradiation unit that irradiates the sample with an energy beam and ionizes a component of the sample, an extraction electrode that extracts the ionized sample from the surface of the sample by a potential difference from the sample stage, an MCP that emits electrons in accordance with the ionized sample, an imaging part that acquires an image based on the electrons emitted by the MCP, and a control unit that controls operations of the irradiation unit, the extraction electrode, and the imaging part. The control unit changes the potential of the extraction electrode at a timing in accordance with the detection target component after the irradiation of the energy beam by the irradiation unit, and causes the imaging part to acquire an image as an analysis target in a period in accordance with the detection target component.

Abstract: A scanning microscope unit includes: a light source for outputting irradiation light; a photodetector; a MEMS mirror for scanning an irradiation light over an observation object, and for guiding an observation light toward the photodetector; a scanning lens for guiding the irradiation light scanned by the MEMS mirror, to a microscope optical system, and for guiding the observation light imaged by the microscope optical system, to the MEMS mirror; and a frame member formed in a frame shape to define an opening, and disposed on a side of the microscope optical system with respect to the scanning lens such that the irradiation light and the observation light pass through the opening. The frame member includes a calibration portion provided in a side portion defining the opening, and for generating calibration light including a sensitivity wavelength of the photodetector in response to an incidence of the irradiation light.

Abstract: A semiconductor apparatus examination method includes a step of detecting light from a plurality of positions in a semiconductor apparatus (D) and acquiring a waveform corresponding to each of the plurality of positions, a step of extracting a waveform corresponding to a specific timing from the waveform corresponding to each of the plurality of positions and generating an image corresponding to the specific timing based on the extracted waveform, and a step of extracting a feature point based on a brightness distribution correlation value in the image corresponding to the specific timing and identifying a position of a drive element in the semiconductor apparatus based on the feature point.

Abstract: A light sheet microscope includes an irradiation optical system, a detection optical system, and a photodetector. The irradiation optical system includes a wavelength sweep light source which outputs light of which a wavelength changes with time as excitation light, a spectroscopic element on which the excitation light output from the wavelength sweep light source is incident and which emits the excitation light at an emission angle corresponding to a wavelength of the excitation light, a relay optical system which includes a cylindrical lens on which the excitation light emitted from the spectroscopic element is incident at an incident angle corresponding to the emission angle, and a first objective lens which condenses the excitation light guided by the relay optical system and irradiates the sample with the excitation light having a sheet shape.

Abstract: A film thickness measuring apparatus measures a film thickness of a sample during a manufacturing step. The film thickness measuring apparatus includes a lens focusing light (plasma light) generated in the manufacturing step and reflected by one surface of the sample, an inclined dichroic mirror having a transmissivity and a reflectivity changing in accordance with a wavelength in a predetermined wavelength region and separating light focused by the lens through transmission and reflection, an area sensor capturing an image of light separated by the inclined dichroic mirror, and a control apparatus estimating the film thickness of the sample on the basis of a signal from the area sensor capturing an image of light and obtaining a film thickness distribution on the one surface of the sample. Light reflected by the sample includes light having a wavelength included in the predetermined wavelength region of the inclined dichroic mirror.

Abstract: A photodetector includes a first conduction-type semiconductor layer, a semiconductor light absorption layer provided on the first conduction-type semiconductor layer, and a second conduction-type semiconductor layer provided on the semiconductor light absorption layer. Inside the semiconductor light absorption layer, finely modified portions forming a localized inhomogeneous electric field inside the semiconductor light absorption layer by scattering incident light are provided in a manner of being separated from the second conduction-type semiconductor layer.

Abstract: An optical device includes a support portion, a first movable portion having an optical surface, a second movable portion having a frame shape and surrounding the first movable portion, a first coupling portion coupling the first movable portion and the second movable portion to each other, a second coupling portion coupling the second movable portion and the support portion to each other, and a softening member which has a softening characteristic and to which stress is applied when the first movable portion swings around a first axis. When viewed in a direction perpendicular to the optical surface, the softening member is provided to a portion of the second movable portion, the portion extending between a drive element and the first coupling portion, and is not electrically connected to an outside.

Abstract: An imaging apparatus includes a light source, a spatial light modulator, a Fourier transform optical system, a photodetector, and a control unit. The control unit sets a first region and a second region on a modulation plane, acquires a light intensity value by setting a light amplitude modulation pattern in the first region and setting a light amplitude modulation in the second region to a non-zero predetermined value, acquires the light intensity value by setting the light amplitude modulation pattern in the first region and setting the light amplitude modulation in the second region to zero, acquires the light intensity value by setting the light amplitude modulation in the first region to zero and setting the light amplitude modulation in the second region to the predetermined value, and acquires a complex amplitude image of a region of an object corresponding to the first region.

Abstract: A photoelectric tube includes a housing including a light transmitting portion, an electron emitting portion including a photoelectric surface disposed inside the housing, an electron capturing portion disposed between the light transmitting portion and the photoelectric surface inside the housing, and a conductive layer disposed on a light transmitting portion side of at least a part of the electron capturing portion to face the photoelectric surface inside the housing and configured to allow light to pass therethrough.

Abstract: A brain measurement apparatus includes: a magnetoencephalograph including optically pumped magnetometers, magnetic sensors for measuring geomagnetic field at positions of the optically pumped magnetometers, magnetic sensors for measuring a fluctuating magnetic field at the positions of the optically pumped magnetometers, nulling coils for cancelling the geomagnetic field, and an active shield coil for cancelling the fluctuating magnetic field; an MRI apparatus including nulling coils for applying a static magnetic field and a gradient magnetic field, a transmission coil, and a receive coil; and a control device that, when measuring a brain's magnetic field, controls currents supplied to the nulling coils and the active shield coil based on measured values of the magnetic sensors and, when measuring an MR image, controls the static magnetic field and the gradient magnetic field by controlling currents supplied to the nulling coils and generates an MR image from an output of the receive coil.

Abstract: A light emitting device includes a housing; a light source unit; and a cooling unit provided in the housing to discharge heat to an outside of the housing by means of a gas, the heat being generated by the light source unit. The cooling unit includes an introduction portion, a heat exchange portion, and a circulation portion that guides the gas from the introduction portion to the heat exchange portion. The circulation portion includes a first flow path receiving the gas from the introduction portion, and a second flow path receiving the gas from the first flow path, and being connected to the heat exchange portion. The first flow path includes a portion having a flow path area larger than a flow path area of the introduction portion.

Abstract: An intensity spectrum designing unit of a data generating device includes an initial value setting unit that sets a plurality of objects of a first generation of an intensity spectrum function A(?) and a phase spectrum function ?(?), an evaluation value calculating unit that calculates an evaluation value for each of a plurality of objects of an n-th generation, an object selecting unit that selects two or more objects used for generating a plurality of objects of an (n+1)-th generation among objects of the n-th generation on the basis of superiority of the evaluation value, and a next-generation generating unit that generates a plurality of objects of the (n+1)-th generation on the basis of the selected two or more objects. The evaluation value calculating unit, the object selecting unit, and the next-generation generating unit repeat processes while 1 is added to n until a predetermined condition is satisfied.

Abstract: A surface-assisted laser desorption/ionization method according to an aspect includes: a first process of preparing a sample support (2) having a substrate (21) in which a plurality of through-holes (S) passing from one surface (21a) thereof to the other surface (21b) thereof are provided and a conductive layer (23) that covers at least the one surface (21a); a second process of placing a sample (10) on a sample stage (1) and arranging the sample support (2) on the sample (10) such that the other surface (21b) faces the sample (10); and a third process of applying a laser beam (L) to the one surface (21a) and ionizing the sample (10) moved from the other surface (21b) side to the one surface (21a) side via the through-holes (S) due to a capillary phenomenon.

Abstract: A radiation detector includes a sensor panel having a light receiving surface, a first scintillator panel and a second scintillator panel disposed on the light receiving surface in a state of being adjacent to each other along the light receiving surface, and an adhesive layer. The first scintillator panel has a first substrate and a first scintillator layer including a plurality of columnar crystals. The second scintillator panel has a second substrate and a second scintillator layer including a plurality of columnar crystals. The first scintillator layer reaches at least a first portion of the first substrate. The second scintillator layer reaches at least a second portion of the second substrate. The adhesive layer is provided continuous over the first scintillator panel and the second scintillator panel.

Abstract: A light-emitting diode element includes a semiconductor substrate having a first surface and a second surface on a side opposite to the first surface, a semiconductor lamination portion formed on the first surface of the semiconductor substrate, a first electrode connected to a part of the semiconductor lamination portion on the semiconductor substrate side, and a second electrode connected to a part of the semiconductor lamination portion on a side opposite to the semiconductor substrate. The semiconductor lamination portion includes an n-type semiconductor layer, an active layer having a p-type conductivity and laminated on the n-type semiconductor layer, and a p-type semiconductor layer laminated on the active layer on a side opposite to the n-type semiconductor layer. The active layer has a multiple quantum well structure constituted of barrier layers including AlInAs and well layers including InAsSb alternately laminated therein.

Abstract: A semiconductor laser element includes a first emitter having a first active layer and a first guide layer, and a second emitter having a second active layer and a second guide layer. A thickness of the first emitter is different from a thickness of the second emitter so that an average value of an index DB1 and an index DB2 represented by equations (1) and (2) is 5% or less, [Equation 1] DB1=?|F1(?)?F01(?)|d???(1) [Equation 2] DB2=?|F2(?)?F02(?)|d???(2) F1(?) is a far field pattern when it is assumed that only the first emitter is present, and F2(?) is a far field pattern when it is assumed that only the second emitter is present. F01(?) is a far field pattern of one of two modes corresponding to a fundamental mode of the light emitted from the first and second emitters, and F02(?) is a far field pattern of the other one.

Abstract: An optical device includes a support portion a movable unit and a pair of torsion bars disposed on both sides of the movable unit on a first axis. The movable unit includes a main body portion, a ring-shaped portion surrounding the main body portion when viewed from a predetermined direction perpendicular to the first axis, two connection portions connecting the main body portion and the ring-shaped portion to each other, and a rib portion provided to the main body portion. Each of the two connection portions includes two connection regions that are separated from each other by a space and the each of the two connection region connects the main body portion and the ring-shaped portion to each other. The rib portion includes four extending portions radially extending between a center of the main body portion and the four connection regions respectively when viewed from the predetermined direction.

Abstract: The present embodiment relates to an electron multiplier or the like having a structure for realizing fast response characteristics as compared with the related art, and the electron multiplier includes at least a dynode unit, a stem, a coaxial cable, a conductive member, and a capacitor. The dynode unit includes multiple-stage dynodes, an anode, and a pair of insulating support members. An end portion of an outer conductor is drawn into the dynode unit together with an exposed portion of an inner conductor constituting a part of one end portion of the coaxial cable. With this configuration, it is possible to arrange the capacitor in a space between the dynode unit and the stem, and it is possible to fix the exposed portion of the inner conductor to a portion of the anode interposed between the pair of insulating support members.

Abstract: A light source unit includes a plurality of light sources emitting light for irradiating an object, and a holding portion holding the plurality of light sources having an insertion hole for an optical fiber inserted therethrough to propagate the light from the object formed therein. The holding portion holds each of the plurality of light sources such that an irradiation region of the light of each of the plurality of light sources is formed on one side of the holding portion. The insertion hole has a first opening that is an opening facing the irradiation region and a second opening that is an opening different from the first opening, and is formed in the holding portion such that one end surface of the optical fiber is exposed from the first opening and faces the irradiation region when the optical fiber is inserted therethrough.