Patents Assigned to Headway Technologies, Inc.
  • Patent number: 11217274
    Abstract: A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. The HM may have a height and width greater than that of the top shield. The top shield may have a ring shape with a HM formed above, below, or within the ring shape, and wherein the HM stabilizes a vortex magnetization. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: January 4, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Junjie Quan, Glen Garfunkel, Yewhee Chye, Kunliang Zhang, Min Li
  • Patent number: 11211084
    Abstract: A Perpendicular Magnetic Recording (PMR) head is configured for use in Thermally Assisted Magnetic Recording (TAMR). Two or three contiguous write shields, of various widths and thicknesses, formed on a leading edge side of the write gap (WG), main pole (MP) and near-field transducer (NFT), protect the head during write touchdowns (TD) and signal the approach of such a touchdown. Moreover during a write touchdown the contact with the head is restricted to the large write shields, producing a large touchdown area (TDA) and insuring the lifetime of the head.
    Type: Grant
    Filed: October 16, 2020
    Date of Patent: December 28, 2021
    Assignees: SAE Magnetics (H.K.) Ltd., Headway Technologies, Inc.
    Inventors: Qinghua Zeng, Siu Yin Ngan, Ellis Cha, Kowang Liu
  • Patent number: 11211082
    Abstract: A magnetic head includes a medium facing surface, a main pole, a trailing shield, a spin torque oscillator, and a first insulating layer. The first insulating layer is interposed between a portion of the main pole and a portion of the spin torque oscillator. The first insulating layer has a first end closest to the medium facing surface. The spin torque oscillator has a rear end farthest from the medium facing surface. The first end of the first insulating layer is located closer to the medium facing surface than the rear end of the spin torque oscillator is.
    Type: Grant
    Filed: February 8, 2021
    Date of Patent: December 28, 2021
    Assignee: HEADWAY TECHNOLOGIES, INC.
    Inventors: Yoshitaka Sasaki, Hiroyuki Ito, Tetsuhito Shinohara, Shigeki Tanemura, Kazuki Sato, Yoji Nomura, Hironori Araki, Tetsuya Roppongi
  • Patent number: 11205447
    Abstract: A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). In a three terminal configuration, a first current flows between S1 and S2 such that the AP1 reference layer produces a first spin torque on the FL, and a second current flows across the SHE layer thereby generating a second spin torque on the FL that opposes the first spin torque. When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: December 21, 2021
    Assignee: Headway Technologies, Inc.
    Inventors: Wenyu Chen, Yan Wu
  • Patent number: 11189304
    Abstract: A spin injection assisted magnetic recording structure is disclosed wherein a ferromagnetic (FM) layer and at least one spin preservation (SP) layer are formed between a main pole (MP) trailing side and a write shield (WS). Current (Ia) flows between the MP and WS, or is injected into the FM layer. As a result, the spin polarized electrons from the FM layer, which flow across one or two SP layers to generate a magnetization that enhances one or both of a local WS magnetization and return field, and a local MP magnetization and write field, respectively. A lead to the FM layer may be stitched to enable lower resistance and improve reliability. The FM layer may be recessed from the ABS to allow more overlap with the SP layer for lower current density while maintaining performance. Higher linear density and area density capability, and better reliability are achieved.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: November 30, 2021
    Assignee: Headway Technologies, Inc.
    Inventor: Yan Wu
  • Patent number: 11170802
    Abstract: A PMR (perpendicular magnetic recording) write head configured for microwave assisted magnetic recording (MAMR) includes a spin-torque oscillator (STO) and trailing shield formed of high moment magnetic material (HMTS). By patterning the STO and the HMTS in a simultaneous process the HMTS and the STO layer are precisely aligned and have very similar cross-track widths. In addition, the write gap at an off-center location has a thickness that is independent from its center-track thickness and the write gap total width can have a flexible range whose minimum value is the same width as the STO width.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: November 9, 2021
    Assignee: Headway Technologies, Inc.
    Inventors: Yuhui Tang, Ying Liu
  • Patent number: 11152021
    Abstract: A perpendicular magnetic recording (PMR) writer is disclosed wherein an insulation layer is formed between a top yoke (TY) and an uppermost (PP3) trailing shield to electrically isolate the main pole (MP) from a trailing loop for magnetic flux return. One or both of a first non-magnetic (NM) metal layer and a second NM metal layer are formed between the MP tip and a hot seed layer and side shields, respectively, to form an electrical path that is in parallel to that of a dynamic fly height (DFH) heater circuit. MP tip protrusion is enhanced and writability is improved especially for track widths <40 nm, and is tunable by the volume of the first and second NM layer, and the composition of the NM metals. Existing writer pad layouts may be employed and there is no additional cost to PMR backend processes.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: October 19, 2021
    Assignee: Headway Technologies, Inc.
    Inventors: Yue Liu, Yan Wu
  • Patent number: 11114119
    Abstract: A thermally-assisted magnetic recording head includes a medium facing surface, a main pole, a waveguide, and a plasmon generator. The plasmon generator includes a first metal layer and a second metal layer. The first metal layer includes a plasmon exciting portion on which surface plasmons are excited. The second metal layer is located on the first metal layer, and includes a bottom surface in contact with the first metal layer, a top surface located on a side opposite to the bottom surface, a front end face that is located in the medium facing surface and generates near-field light from the surface plasmons, and a connecting surface that connects the top surface and the front end face. The connecting surface includes an inclined portion inclined relative to a direction perpendicular to the medium facing surface.
    Type: Grant
    Filed: October 2, 2020
    Date of Patent: September 7, 2021
    Assignee: HEADWAY TECHNOLOGIES, INC.
    Inventors: Yoshitaka Sasaki, Hiroyuki Ito, Shigeki Tanemura, Seiichiro Tomita
  • Patent number: 11114121
    Abstract: A slider design for a hard disk drive (HDD) features a shallow cavity adjacent to a leading edge that has patterns of sub-cavities of various shapes etched into its base to reduce its original surface area. The presence of these patterns of sub-cavities significantly reduces the probability that the slider will capture particles on the surface of a rotating disk and thereby reduces the corresponding probability of surface scratches that such captured particles inevitably produce.
    Type: Grant
    Filed: October 19, 2020
    Date of Patent: September 7, 2021
    Assignees: SAE Magnetics (H.K.) Ltd., Headway Technologies, Inc.
    Inventors: Ben Ng Kwun Pan, Ellis Cha
  • Patent number: 11056133
    Abstract: A PMR (perpendicular magnetic recording) write head configured for microwave assisted magnetic recording (MAMR) includes a spin-torque oscillator (STO) and trailing shield formed of high moment magnetic material (HMTS). By patterning the STO and the HMTS in a simultaneous process the HMTS and the STO layer are precisely aligned and have very similar cross-track widths. In addition, the write gap at an off-center location has a thickness that is independent from its center-track thickness and the write gap total width can have a flexible range whose minimum value is the same width as the STO width.
    Type: Grant
    Filed: September 18, 2020
    Date of Patent: July 6, 2021
    Assignee: Headway Technologies, Inc.
    Inventors: Yuhui Tang, Ying Liu
  • Patent number: 11056282
    Abstract: A capacitor includes a dielectric structure formed of a sintered dielectric, and a first electrode and a second electrode each formed of a conductor. The dielectric structure includes a wall. The first electrode and the second electrode are insulated from each other by the wall. The wall has a height which is a dimension in a first direction, and a thickness which is a dimension in a second direction orthogonal to the first direction, the height being greater than the thickness. The wall has a non-straight shape when seen in the first direction. A manufacturing method for the capacitor includes forming the dielectric structure, and forming the first electrode and the second electrode simultaneously after the formation of the dielectric structure.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: July 6, 2021
    Assignees: HEADWAY TECHNOLOGIES, INC., TDK CORPORATION
    Inventors: Yoshitaka Sasaki, Hiroyuki Ito, Hironori Araki, Seiichiro Tomita, Atsushi Iijima
  • Patent number: 11056136
    Abstract: A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer and a conductor layer (CL) are formed between a main pole (MP) trailing side and a trailing shield (TS). When the SHE layer is a negative Spin Hall Angle (SHA) material, current (Ia) flows from the SHE layer across the CL to a lead back to a source, or across the CL to one of the MP and TS. For a SHE layer with a positive SHA material, Ia flows from one of the MP or TS or from a lead across the CL to the SHE layer. Spin polarized current in the SHE layer applies spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field, or that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.
    Type: Grant
    Filed: July 2, 2020
    Date of Patent: July 6, 2021
    Assignee: Headway Technologies, Inc.
    Inventor: Wenyu Chen
  • Patent number: 11049516
    Abstract: A near-field light generator includes a plasmon generator including a plasmon exciting portion on which a surface plasmon is excited, and a near-field transducer including a front end face that generates near-field light from the surface plasmon. The near-field transducer is formed of a first metal material. The plasmon generator includes a first portion formed of the first metal material and a second portion formed of a second metal material. The first portion is in contact with the near-field transducer. The second portion includes at least part of the plasmon exciting portion.
    Type: Grant
    Filed: October 13, 2020
    Date of Patent: June 29, 2021
    Assignee: HEADWAY TECHNOLOGIES, INC.
    Inventors: Yukinori Ikegawa, Yoshitaka Sasaki, Hiroyuki Ito, Shigeki Tanemura, Yoji Nomura
  • Patent number: 11043632
    Abstract: A first pattern is formed on an MTJ stack as a first array of first parallel bands. A first ion beam etching is performed on the MTJ stack using the first pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the first parallel bands and the substrate is not rotated. Thereafter, a second pattern is formed on the MTJ stack as a second array of parallel bands wherein the second parallel bands are perpendicular to the first parallel bands. A second ion beam etching is performed using the second pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the second parallel bands and wherein the substrate is not rotated to complete formation of the MTJ structure.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: June 22, 2021
    Assignee: Headway Technologies, Inc.
    Inventors: Vignesh Sundar, Guenole Jan, Dongna Shen, Yi Yang, Yu-Jen Wang
  • Patent number: 11043240
    Abstract: A near field transducer (NFT) with an upper RhIr layer having an Ir content from 20-80 atomic % and a lower Au layer is formed between a waveguide and main pole at an air bearing surface (ABS). The RhIr layer has a rod-like front portion (peg) up to height h1, and a substantially triangular shaped back portion (body) from h1 to height h2. In some embodiments, there is a Rh underlayer with a thickness from 10 Angstroms to 200 Angstroms between the upper and lower NFT layers, and extending from the ABS to h2 so that the RhIr layer has a substantially uniform microcrystalline structure throughout to prevent thermally induced rupture defects proximate to h1. Optionally, the Rh underlayer may have a front side at h1, and may further comprise a lower Al or Zr adhesion layer. Accordingly, there is improved device reliability.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: June 22, 2021
    Assignee: Headway Technologies, Inc.
    Inventors: Koji Shimazawa, Shengyuan Wang
  • Patent number: 11043234
    Abstract: A spin torque reversal assisted magnetic recording (STRAMR) structure is disclosed wherein a spin torque oscillator (STO) is formed in the write gap (WG) and generates one or both of a radio frequency (RF) field on a magnetic bit to lower the required write field during a write process, and a spin torque on a field generation layer (FGL) in the STO that flips a FGL magnetization to a direction opposing the WG field thereby increasing reluctance in the WG and causing larger write field output from the main pole (MP). The FGL is between two spin preserving layers that each conduct spin polarized current from an adjoining spin polarization (SP) layer. Current is applied from the MP and trailing shield to the SP layers, and returns to a direct current source through a lead from the FGL. STO sidewalls are self-aligned to a MP tip upper portion.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: June 22, 2021
    Assignee: Headway Technologies, Inc.
    Inventor: Yan Wu
  • Patent number: 11043232
    Abstract: A spin transfer torque reversal assisted magnetic recording (STRAMR) device is disclosed wherein a flux change layer (FCL) is formed between a main pole (MP) trailing side and a trailing shield (TS). The FCL has a magnetization that flips to a direction substantially opposing the write gap magnetic field when a direct current (DC) of sufficient current density is applied across the STRAMR device thereby increasing reluctance in the WG and producing a larger write field output at the air bearing surface. Heat transfer in the STRAMR device is enhanced and production cost is reduced by enlarging the STRAMR width to be essentially equal to that of the TS, and where the TS and STRAMR widths are formed using the same process steps. Bias voltage is used to control the extent of FCL flipping to a center portion to optimize the gain in area density capability in the recording system.
    Type: Grant
    Filed: February 4, 2020
    Date of Patent: June 22, 2021
    Assignee: Headway Technologies, Inc.
    Inventor: Yan Wu
  • Patent number: 11031039
    Abstract: A preamplifier that that is configured for optimizing the write current waveform to achieve the best areal density capability (ADC) and adjacent track interference (ATI) performance of a magnetic recording disk drive. The preamplifier is configured for providing a magnetic head write current with a main pole relaxation zone for providing a buffer zone for main pole relaxation from saturation state to a remanence state before writing the next bit. The preamplifier is further configured for providing a magnetic head write current with a reference main pole relaxation current located at an end region data of each bit. The length of the reference main pole relaxation current is a function of the bit length, frequency, recording velocity, and writer/media switching speed.
    Type: Grant
    Filed: August 19, 2020
    Date of Patent: June 8, 2021
    Assignee: Headway Technologies, Inc.
    Inventors: Yuhui Tang, Ying Liu
  • Patent number: 11031548
    Abstract: A method for fabricating a magnetic tunneling junction (MTJ) structure is described. A MTJ film stack is deposited on a bottom electrode on a substrate. The MTJ film stack is first ion beam etched (IBE) using a first angle and a first energy to form a MTJ device wherein conductive re-deposition forms on sidewalls of the MTJ device. Thereafter, the conductive re-deposition is oxidized. Thereafter, the MTJ device is second ion beam etched (IBE) at a second angle and a second energy to remove oxidized re-deposition.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: June 8, 2021
    Assignee: Headway Technologies, Inc.
    Inventors: Dongna Shen, Yi Yang, Sahil Patel, Vignesh Sundar, Yu-Jen Wang
  • Patent number: 11024333
    Abstract: A bottom shield in a read head is modified by including a non-magnetic decoupling layer and second magnetic layer on a conventional first magnetic layer. The second magnetic layer has a magnetization that is not exchange coupled to the first magnetic layer, and a domain structure that is not directly affected by stray fields due to domain wall motion in the first magnetic layer. Accordingly, the modified bottom shield reduces shield related noise on the reader and will provide improved signal to noise (SNR) ratio and better reader stability. The second magnetic layer may be further stabilized with one or both of an antiferromagnetic coupling scheme, and insertion of an antiferromagnetic pinning layer. In dual readers, the modified bottom shield is used in either the bottom or top reader although in the latter, first magnetic layer thickness is reduced to maintain reader-to-reader spacing and acceptable bit error rate (BER).
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: June 1, 2021
    Assignee: Headway Technologies, Inc.
    Inventor: Yan Wu