Patents Assigned to Heritage Power LLC
  • Patent number: 7456084
    Abstract: There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.
    Type: Grant
    Filed: January 28, 2005
    Date of Patent: November 25, 2008
    Assignee: Heritage Power LLC
    Inventors: Ralf Jonczyk, Scott L. Kendall, James A. Rand
  • Publication number: 20070181174
    Abstract: There are provided photovoltaic tiles (each containing at least one photovoltaic cell) which can be readily integrated into a roof structure constructed of standard roofing materials. The photovoltaic tiles have frames which hold photovoltaic elements, the frames having end portions which are engageable with opposite end portions of similarly-shaped photovoltaic tiles and/or with end portions of standard roofing tiles, and/or which are shaped similar to shapes of end portions of standard roofing tiles. There are also provided roofing systems including standard roofing tiles and such photovoltaic tiles. There are also provided methods of constructing a roof using such a roofing system.
    Type: Application
    Filed: April 4, 2007
    Publication date: August 9, 2007
    Applicant: Heritage Power LLC
    Inventor: Stephen RESSLER
  • Patent number: 7211521
    Abstract: A structure including at least one layer of germanium formed on a surface of a ceramic substrate is provided. The layer of germanium has a thickness of not larger than 10 microns and includes grains having grain size of at least 0.05 mm. A structure including at least one layer of germanium formed on a surface of a ceramic substrate and having at least one capping layer formed on a surface of the layer of germanium is also provided. In addition, a method of forming a thin film germanium structure is provided including forming at least one layer of germanium on a surface of a ceramic substrate, then forming at least one capping layer on a surface of the layer of germanium, followed by heating and then cooling the layer of germanium.
    Type: Grant
    Filed: October 21, 2004
    Date of Patent: May 1, 2007
    Assignee: Heritage Power LLC
    Inventor: Michael G. Mauk
  • Patent number: 7183669
    Abstract: There are provided monitors which sense a magnitude of power (and/or energy) being consumed by a facility and which sense a magnitude of power (and/or energy) being produced by at least one energy-producing system. There are provided facilities comprising at least one main panel bus, at least one external power line, at least one energy-producing system, at least one critical load sub-panel bus and at least one monitor which senses a magnitude of power (and/or energy) being consumed by the facility and a magnitude of power (and/or energy) being produced by the at least one energy-producing system. There are provided methods of monitoring power (and/or energy) consumed and power (and/or energy) produced in a facility, and devices which display magnitude of power (and/or energy) being consumed and magnitude of power (and/or energy) being produced in a battery.
    Type: Grant
    Filed: February 11, 2004
    Date of Patent: February 27, 2007
    Assignee: Heritage Power LLC
    Inventors: Jason Schripsema, Jerome S. Culik, Mark Mrohs, Allen Barnett
  • Patent number: 6979989
    Abstract: A maximum power level sensor and method for reliably providing instantaneous estimates of maximum power level for a photovoltaic system including one or more photovoltaic cells under prevailing conditions of irradiance, array temperature and spectrum of sunlight. The maximum power level sensor produces a reference voltage signal which is proportional to the maximum power level of the photovoltaic system. The maximum power level sensor comprises a reference circuit including at least one reference photovoltaic cell and a thermistor network in parallel with the reference cell. The thermistor network comprises at least one negative temperature coefficient thermistor, at least one resistor in parallel with the thermistor, and at least one resistor in series with the thermistor and the parallel resistor. The thermistor is positioned in or on the photovoltaic array. The reference cell is preferably constructed of materials which are similar to those of the photovoltaic cells in the photovoltaic system.
    Type: Grant
    Filed: October 18, 2004
    Date of Patent: December 27, 2005
    Assignee: Heritage Power LLC
    Inventors: Jason Schripsema, Michael Anthony Johnston, Alysha J. Grenko