Abstract: This invention provides a method for improving performance of a reflective type energy filter for a charged particle beam, which employs a beam-adjusting lens on an entrance side of a potential barrier of the energy filter to make the charged particle beam become a substantially parallel beam to be incident onto the potential barrier. The method makes the energy filter have both a fine energy-discrimination power over a large emission angle spread and a high uniformity of energy-discrimination powers over a large FOV. A LVSEM using this method in the energy filter can obviously improve image contrast. The invention also provides multiple energy-discrimination detection devices formed by using the advantages of the method.

Abstract: This invention provides a method for improving performance of a reflective type energy filter for a charged particle beam, which employs a beam-adjusting lens on an entrance side of a potential barrier of the energy filter to make the charged particle beam become a substantially parallel beam to be incident onto the potential barrier. The method makes the energy filter have both a fine energy-discrimination power over a large emission angle spread and a high uniformity of energy-discrimination powers over a large FOV. A LVSEM using this method in the energy filter can obviously improve image contrast. The invention also provides multiple energy-discrimination detection devices formed by using the advantages of the method.

Abstract: A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.

Abstract: The present invention discloses a structure and method for determining a defect in integrated circuit manufacturing process, wherein the structure comprises a plurality of normal active areas formed in a plurality of first arrays and a plurality of defective active areas formed in a plurality of second arrays. The first arrays and second arrays are interlaced, and the defect is determined by monitoring a voltage contrast from a charged particle microscope image of the active areas.

Abstract: This invention relates to methods and systems for enhance the signal-to-noise ratio of an image scanned by a charged particle beam. In an embodiment, a sequence of grayscales of a pixel is recorded first, extreme values of the sequence of grayscales are then identified and removed, and the remained grayscales are used to determine a nominated grayscale of the pixel.

Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

Abstract: The present invention provides two ways to form a special permeability-discontinuity unit inside every sub-lens of a multi-axis magnetic lens, which either has a simpler configuration or has more flexibility in manufacturing such as material selection and mechanical structure. Accordingly several types of multi-axis magnetic lens are proposed for various applications. One type is for general application such as a multi-axis magnetic condenser lens or a multi-axis magnetic transfer lens, another type is a multi-axis magnetic non-immersion objective which can require a lower magnetomotive force, and one more type is a multi-axis magnetic immersion objective lens which can generate smaller aberrations. Due to using permeability-discontinuity units, every multi-axis magnetic lens in this invention can also be electrically excited to function as a multi-axis electromagnetic compound lens so as to further reduce aberrations thereof and/or realize electron beam retarding for low-voltage irradiation on specimen.

Abstract: This invention provides a method for improving performance of a reflective type energy filter for a charged particle beam, which employs a beam-adjusting lens on an entrance side of a potential barrier of the energy filter to make the charged particle beam become a substantially parallel beam to be incident onto the potential barrier. The method makes the energy filter have both a fine energy-discrimination power over a large emission angle spread and a high uniformity of energy-discrimination powers over a large FOV. A LVSEM using this method in the energy filter can obviously improve image contrast. The invention also provides multiple energy-discrimination detection devices formed by using the advantages of the method.

Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

Abstract: A method for forming a memory cell transistor is disclosed which includes providing a substrate, forming a trench structure in the substrate, depositing a conductive substance on the surface of the substrate to form a conductive member inside the trench structure, forming one or more dielectric layers on the surface of the substrate, forming one or more first conductive layers on top of the dielectric layers, and etching the first conductive layers and the dielectric layers to form a hole structure extending through the first conductive and the dielectric layers, reaching to the substrate surface. The formed memory cell transistor thus comprises a hole structure which is formed from the surface of the top first conductive layer, extending downwards through the first conductive layers and the dielectric layers, and reaching the substrate surface. One or more second conductive layers may be formed on top of the first conductive layers, with the second conductive layer material filling the hole structure.

Abstract: A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.

Abstract: A method for inspecting overlay shift defect during semiconductor manufacturing is disclosed herein and includes a step for providing a charged particle microscopic image of a sample, a step for identifying an inspection pattern measure in the charged particle microscopic image, a step for averaging the charged particle microscopic image by using the inspection pattern measure to form an averaged inspection pattern measure, a step for estimating an average width from the averaged inspection pattern measure, and a step for comparing the average width with a predefined threshold value to determine the presence of the overlay shift defect.

Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

Abstract: A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A grounding pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the grounding pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount.

Abstract: An assembly for a charged particle detection unit is described. The assembly comprises a scintillator disc, a partially coated light guide a thin metal tube for allowing the primary charged particle beam to pass through and a photomultiplier tube (PMT). The shape of scintillator disc and light guide are redesigned to improved the light signal transmission thereafter enhance the light collection efficiency. A light guide with a conicoidal surface over an embedded scintillator improved the light collection efficiency of 34% over a conventional design.

Abstract: This invention relates to a filament for electron emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source. Embodiments of the present invention discloses method with which a Re (Rhenium) is used as heat source such that vibration issue of prior tungsten filament can be depressed.

Abstract: A method for enhancing the quality of a charged particle microscopic image of a sample is disclosed. The image is formed by a charged particle beam imaging system. The method comprising: scanning, using a first scanning beam, a surface of the sample in at least one first scan line; and scanning, using a second scanning beam, the sample surface in at least one second scan line, wherein said second scanning beam is scanned across said sample surface during a time interval between the end of said first scan lines and the beginning of the next said first scan lines. Application of the proposed method as a charged particle beam imaging system is also disclosed.

Abstract: The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.

Abstract: This invention provides a method for improving performance of a reflective type energy filter for a charged particle beam, which employs a beam-adjusting lens on an entrance side of a potential barrier of the energy filter to make the charged particle beam become a substantially parallel beam to be incident onto the potential barrier. The method makes the energy filter have both a fine energy-discrimination power over a large emission angle spread and a high uniformity of energy-discrimination powers over a large FOV. A LVSEM using this method in the energy filter can obviously improve image contrast. The invention also provides multiple energy-discrimination detection devices formed by using the advantages of the method.

Abstract: A cellular-type PD unit is proposed and a plurality of the cellular-type PD units is used in pairs in a multi-axis magnetic lens for focusing a plurality of charged beams. First type PD units or second type PD units (called as hybrid PD unit as well) can be applied to cellular-type PD units to flexibly construct sub-lenses. Furthermore, magnetic shielding plates with a plurality of through openings can be placed above and/or below the multi-axis magnetic lens to make magnetic flux leaking out of the multi-axis magnetic lens vanish away rapidly outside the magnetic shielding plates.