Patents Assigned to Higgs OPL. Capital LLC
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Publication number: 20160111636Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: ApplicationFiled: December 28, 2015Publication date: April 21, 2016Applicant: HIGGS OPL. CAPITAL LLCInventors: Frederick T. Chen, Ming-Jinn Tsai
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Patent number: 9245924Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: GrantFiled: October 23, 2014Date of Patent: January 26, 2016Assignee: HIGGS OPL. CAPITAL LLCInventors: Frederick T. Chen, Ming-Jinn Tsai
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Patent number: 9087985Abstract: A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact.Type: GrantFiled: February 26, 2014Date of Patent: July 21, 2015Assignee: HIGGS OPL.CAPITAL LLCInventor: Frederick T. Chen
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Patent number: 8884260Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: GrantFiled: October 24, 2013Date of Patent: November 11, 2014Assignee: Higgs Opl. Capital LLCInventors: Frederick T. Chen, Ming-Jinn Tsai
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Publication number: 20140175370Abstract: A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact.Type: ApplicationFiled: February 26, 2014Publication date: June 26, 2014Applicant: Higgs Opl. Capital LLCInventor: Frederick T. CHEN
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Patent number: 8716099Abstract: A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact.Type: GrantFiled: March 12, 2013Date of Patent: May 6, 2014Assignee: Higgs Opl. Capital LLCInventor: Frederick T. Chen
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Publication number: 20140048762Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: ApplicationFiled: October 24, 2013Publication date: February 20, 2014Applicant: Higgs Opl. Capital LLCInventors: Frederick T. CHEN, Ming-Jinn TSAI
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Patent number: 8605493Abstract: A phase change memory with an operating current that can be gradually increased or gradually decreased. The phase change memory has a phase change storage element, a transistor, and a control circuit. The transistor is operable to adjust the operating current flowing through the phase change storage element. The transistor has a first terminal coupled to a voltage source, a second terminal coupled to the phase change storage element, and a control terminal receiving a control signal from the control circuit. The control circuit is specially designed to limit the transistor in a linear region.Type: GrantFiled: May 22, 2012Date of Patent: December 10, 2013Assignee: Higgs Opl. Capital LLCInventors: Shyh-Shyuan Sheu, Pei-Chia Chiang, Wen-Pin Lin
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Patent number: 8604457Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: GrantFiled: November 12, 2008Date of Patent: December 10, 2013Assignee: Higgs Opl. Capital LLCInventors: Frederick T Chen, Ming-Jinn Tsai
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Publication number: 20130196467Abstract: A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact.Type: ApplicationFiled: March 12, 2013Publication date: August 1, 2013Applicant: Higgs Opl. Capital LLCInventor: Higgs Opl. Capital LLC
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Patent number: 8426838Abstract: A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact.Type: GrantFiled: November 27, 2008Date of Patent: April 23, 2013Assignee: Higgs Opl. Capital LLCInventor: Frederick T Chen
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Patent number: 8199561Abstract: A phase change memory with an operating current that can be gradually increased or gradually decreased. The phase change memory has a phase change storage element, a transistor, and a control circuit. The transistor is operable to adjust the operating current flowing through the phase change storage element. The transistor has a first terminal coupled to a voltage source, a second terminal coupled to the phase change storage element, and a control terminal receiving a control signal from the control circuit. The control circuit is specially designed to limit the transistor in a linear region.Type: GrantFiled: September 21, 2009Date of Patent: June 12, 2012Assignee: Higgs OPL. Capital LLCInventors: Shyh-Shyuan Sheu, Pei-Chia Chiang, Wen-Pin Lin
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Patent number: RE45035Abstract: A verification circuit for a phase change memory array is provided. A sensing unit senses a sensing voltage from a memory cell of the phase change memory array according to an enable signal. A comparator generates a comparing signal according to the sensing voltage and a reference voltage, so as to indicate whether the memory cell is in a reset state. A control unit generates a control signal according to the enable signal. An operating unit generates a first signal according to the control signal, so as to indicate whether the comparator is active. An adjustment unit provides a writing current to the cell, and increases the writing current according to the control signal until the comparing signal indicates that the memory cell is in a reset state.Type: GrantFiled: July 3, 2013Date of Patent: July 22, 2014Assignee: Higgs Opl. Capital LLCInventors: Wen-Pin Lin, Shyh-Shyuan Sheu, Pei-Chia Chiang
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Patent number: RE45189Abstract: An embodiment of a writing system for a phase change memory based on a present application is disclosed. The writing system comprises a first phase change memory (PCM) cell, a second PCM cell, a first writing circuit and a verifying circuit. The first writing circuit executes a writing procedure, receives and writes a first data to the first PCM cell. The verifying circuit executes a verifying procedure and the circuit further comprises a processing unit and a second writing circuit. The processing unit reads and compares the data stored in the second PCM cell with a second data. The second writing circuit writes the second data to the second PCM cell when the data stored in the second PCM cell and the second data are not matched.Type: GrantFiled: August 10, 2012Date of Patent: October 14, 2014Assignee: Higgs OPL. Capital LLCInventors: Shyh-Shyuan Sheu, Lieh-Chiu Lin, Pei-Chia Chiang, Wen-Pin Lin