Abstract: In addition to an ordinary bit field instruction without limitation which makes use of an offset value and a field width, a bit field instruction with limitation which does not calculate the spread of the bit field is separately installed. In the present invention the calculation for determination of the spread of the bit field is not performed when the bit field instruction with limitation is executed. In addition, when executing a bit field instruction with limitation, the offset value and the field width can be obtained directly as immediate values thereby decreasing the execution time of the instruction.

Abstract: In a multilayer circuit board wherein a plurality of electronic parts are provided on a first principal plane, a plurality of brazing pads for pins are respectively arranged on a second principal plane and a plurality of wiring layers having wiring nets for connecting said electrical parts are formed between these principal planes. The EC pads for I/O leads for connecting discrete wires is provided to said first principal plane. EC pads are provided on said second principal plane and are connected to the brazing pads for pins in such a manner as to be electrically separable as required. The EC pads for I/O leads and the brazing pads for pins are connected through the interior of the multilayer circuit board and the EC pads are connected to the wiring net through the interior of the multilayer circuit board.

Abstract: A logic circuit is provided which includes a first multi-emitter transistor with its emitters coupled to a group of first input lines and a first transistor with its base coupled to the collector of said first multi-emitter transistor. A second transistor is also provided with its base coupled to the collector of said first transistor, said second transistor having a polarity opposite to that of said first multi-emitter transistor. A second multi-emitter transistor is connected with its base coupled to the collector of said second transistor and with its emitters coupled to a group of second input lines, and a third transistor is connected with its base coupled to the collector of said second multi-emitter transistor and with its collector coupled to an output line. The collector of said first multi-emitter transistor is coupled to the emitter of said second multi-emitter transistor in order to absorb minority carriers stored in the transistors. This feature significantly improves the circuit operating speed.

Abstract: A VTR is furnished with a phase-locked loop whose reference input is a color signal subcarrier. The phase-locked loop fixes two sound FM carrier frequencies in constant relationships with the frequency of the color signal subcarrier, thereby to stabilize the carrier frequencies. The two sound FM carrier frequencies are respectively selected to be integral times of f.sub.H /2 (where f.sub.H denotes the frequency of a horizontal synchronizing signal). The frequencies of the beats between both the sound carrier are fixed to integral times of f.sub.H /2, with the result that the degradation of a reproduced picture attributed to the beats is prevented.

Abstract: A read-only memory has a terminal for receiving a writing current and a data input/output terminal. In the writing operation, the writing current is supplied to the terminal which is different from the data input/output terminal. Therefore, a data output circuit can be constituted by an ECL circuit having a relatively low withstand voltage, and a selection circuit related to the reading operation is achieved by using an ECL circuit. Accordingly, the read-only memory performs the reading operation at high speeds. During the writing operation, a different selection circuit is used which can withstand high voltages.