Abstract: Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula: Mg2Sn·Zna??Composition formula: in which, a is a Zn content of from 0.05 to 1 at % relative to Mg2Sn.

Abstract: A leukocyte trapping apparatus configured so: a chip having protruding parts arranged on a flat part, a blood-containing solution that enters through an inlet port is allowed to pass through the surface of the flat part and through spaces between two adjacent protruding parts in the chip and is discharged through a discharge port; the protruding parts are arranged in layers on the flat part, layer containing a plurality of the protruding parts, and the blood-containing solution that has passed through a layer located on the inlet port side passes through another layer that is adjacent to the layer on the discharge port side; a trapping part and a bypass part are between two adjacent protruding parts in each layer; and the trapping part is on the discharge port side of the bypass part in a specific layer as a portion of another layer adjacent to the specific layer.

Abstract: Provided is a Mg2Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg2Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°.

Abstract: Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula: Mg2Sn.Zna??Composition formula: in which, a is a Zn content of from 0.05 to 1 at % relative to Mg2Sn.

Abstract: Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.

Abstract: A power conversion apparatus performs power conversion among at least a first device, a second device, and a third device. The power conversion apparatus includes a primary converter configured to perform power conversion between the first device and second device. The primary converter includes a first switch, a second switch, a third switch, a fourth switch, and a capacitor. The second switch, the third switch, the fourth switch, and the capacitor are connected in full bridge configuration to constitute a full bridge converter.

Abstract: A power conversion apparatus performs power conversion among at least a first device, a second device, and a third device. The power conversion apparatus includes a primary converter configured to perform power conversion between the first device and second device. The primary converter includes a first switch, a second switch, a third switch, a fourth switch, and a capacitor. The second switch, the third switch, the fourth switch, and the capacitor are connected in full bridge configuration to constitute a full bridge converter.

Abstract: Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.

Abstract: A wire grid device having transmission power characteristics and a power extinction ratio in a terahertz wave band that cannot be achieved conventionally. A cutout is formed between one end and an opposite end of a rectangular metal thin plate to form a plurality of grid plates each having an elongated grid part between the one end and the opposite end. The grid plates are stacked in such a manner that the grid parts of the grid plates are spaced at a given interval and face each other, thereby forming a grid plate stack. In this case, spacers are inserted between one ends and between opposite ends of adjacent ones of the grid plates to form parallel flat plates configured by the grid parts. The grid plate stack forming the parallel flat plates operates as a polarizer for a terahertz wave band.

Abstract: A sheet-type metamaterial includes: a film-shaped dielectric substrate; a first and second wire array formed on the dielectric substrate's front surface and back surface respectively. The first wire array includes elongated metallic first cut wires of a length aligned in a y-axis direction with a gap g therebetween and in an x-axis direction with space s therebetween. The second wire array includes second cut wires having same shape as first cut wires and aligned so as to overlap first cut wires and to be symmetric with the first cut wires. With a design frequency set at 0.51 THz, the dielectric substrate's thickness d is set at about 50 ?m, space s is set at about 361 ?m, gap g is set at about 106 ?m, and the length of first and second cut wires is set at a length approximate to a value to generate resonance at a working frequency.

Abstract: A sheet-type metamaterial of a film configuration to exhibit a figure of merit (FOM) exceeding 300 in a terahertz wave band. A film-shaped dielectric substrate has a front surface on which a first wire array is formed, and a back surface on which a second wire array is formed. The first wire array includes elongated metallic first cut wires of a predetermined length l aligned in a y-axis direction with a gap g therebetween and in an x-axis direction with space s therebetween. The second wire array includes second metallic cut wires having the same shape as the first cut wires and aligned to overlap the first cut wires. With a thickness d of the dielectric substrate set at about 50 ?m, the length l of the first cut wire and the second cut wire is a length approximate to a value to generate resonance at a design frequency.

Abstract: Achieve an extinction ratio in the approximate 10?6 class for intensity transmittance in the terahertz band with one element. A wire grid device configured from layering a plurality of film substrates each formed from a rectangular polymer film wherein a narrow rectangular metal thin plate is formed in the approximate center of one face thereof. By having the width of the metal thin plate be approximately 1.0 mm, the length of the metal thin plate be approximately 12.0-30 mm, and the thickness of the film substrate be approximately 0.5-50 ?m, it is possible to easily achieve an extinction ratio in the approximate 10?6 class for intensity transmittance in the terahertz band with one element.

Abstract: Optical axis as central axis is defined as z-axis, and axes perpendicular to z-axis are defined as x- and y-axis. Metallic flat plates are formed parallel to x-z plane to overlap each other and be separated by a given distance. Multiple flat plates except the top flat plate and bottom flat plate are each provided with multiple through holes. Central flat plates are each provided with through holes of a first radius. Intermediate flat plates arranged between central flat plate and top flat plate and between central flat plate and bottom flat plate are each provided with through holes of a second radius smaller than first radius. Second radius of through holes formed in an intermediate flat plate arranged in a position farther from central flat plate is smaller than second size of through holes formed in an intermediate flat plate arranged in a position closer to central flat plate.

Abstract: A wire grid device having transmission power characteristics and a power extinction ratio in a terahertz wave band that cannot be achieved conventionally. A cutout is formed between one end and an opposite end of a rectangular metal thin plate to form a plurality of grid plates each having an elongated grid part between the one end and the opposite end. The grid plates are stacked in such a manner that the grid parts of the grid plates are spaced at a given interval and face each other, thereby forming a grid plate stack. In this case, spacers are inserted between one ends and between opposite ends of adjacent ones of the grid plates to form parallel flat plates configured by the grid parts. The grid plate stack forming the parallel flat plates operates as a polarizer for a terahertz wave band.

Abstract: Achieve an extinction ratio in the approximate 10?6 class for intensity transmittance in the terahertz band with one element. A wire grid device configured from layering a plurality of film substrates each formed from a rectangular polymer film wherein a narrow rectangular metal thin plate is formed in the approximate center of one face thereof. By having the width of the metal thin plate be approximately 1.0 mm, the length of the metal thin plate be approximately 12.0-30 mm, and the thickness of the film substrate be approximately 0.5-50 ?m, it is possible to easily achieve an extinction ratio in the approximate 10?6 class for intensity transmittance in the terahertz band with one element.

Abstract: Optical axis as central axis is defined as z-axis, and axes perpendicular to z-axis are defined as x- and y-axis. Metallic flat plates are formed parallel to x-z plane to overlap each other and be separated by a given distance. Multiple flat plates except the top flat plate and bottom flat plate are each provided with multiple through holes. Central flat plates are each provided with through holes of a first radius. Intermediate flat plates arranged between central flat plate and top flat plate and between central flat plate and bottom flat plate are each provided with through holes of a second radius smaller than first radius. Second radius of through holes formed in an intermediate flat plate arranged in a position farther from central flat plate is smaller than second size of through holes formed in an intermediate flat plate arranged in a position closer to central flat plate.

Abstract: A bias magnetic flux is formed so as to be passed through the electromagnet core of an electromagnet, and a bypass magnetic path, serving as a magnetic path for a control magnetic flux, is formed in parallel with a permanent magnet, the bypass magnetic path being magnetized in a direction in which passage of the bias magnetic flux is blocked, and thus, even if the permanent magnet and the electromagnet are disposed in locations where the mutual magnetic fluxes of the permanent magnet and the electromagnet are superimposed, the control magnetic flux formed by the electromagnet is passed through the bypass magnetic path, whereby loss of the control magnetic flux can be suppressed. Thereby, the permanent magnet and the electromagnet can be disposed in locations where the mutual magnetic fluxes are superimposed, whereby the device can be made smaller in size.

Abstract: Provided are an apparatus and a method for producing an inexpensive Mg2Si1-xSnx polycrystal that can be effectively used as thermoelectric conversion materials that can be expected to have a high performance index by doping if necessary.

Abstract: Disclosed is a fluorine-containing polymer obtained by polymerizing a 1,6-diene-type ether compound represented by formula [1] and, for example, a (meth)acrylic acid compound represented by formula [2]. The fluorine-containing polymer shows high transparency, has a high glass transition point, and is soluble in a solvent and therefore has moldability. In the case where a (meth)acrylic unit has a reactive substituent, by utilizing the crosslinking reaction thereof, a thin film having high solvent resistance can be produced. In formulae [1] and [2], R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, which may be substituted, R3 represents a hydrogen atom, a fluorine atom, or a methyl group, and R4 represents a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, which may be substituted, or an aromatic group having 5 to 10 ring members, which may be substituted.

Abstract: A semiconductor integrated-circuit device using the copper wiring having increased electromigration resistance, low resistivity, and a line width of 70 nm or less, is provided. The present invention is characterized by the annealing treatment wherein a copper wiring having a line width of 70 nm or less is heated with a heating rate of 1K to 10K per second, and then the temperature is constantly maintained for a prescribed time duration.