Patents Assigned to Icemos Technology Corporation
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Patent number: 11935839Abstract: A semiconductor device includes a semiconductor layer with opposing first and second main surfaces and a first column extending from the first main surface and having a first concentration of a dopant of the first conductivity type. A trench with a sidewall and bottom extends at least partially through the semiconductor layer from the first main surface. A second column between the trench sidewall and the first column has a second concentration of a dopant of a second conductivity type and is formed in the semiconductor layer and extends from the first main surface. A trench oxide layer is in contact with at least the trench sidewall and the trench bottom. A trench nitride layer covers the trench oxide layer at least on the trench sidewall. A dielectric seal material seals the trench proximate the first main surface of the semiconductor layer such that the trench is air-tight.Type: GrantFiled: May 27, 2022Date of Patent: March 19, 2024Assignee: IceMos Technology CorporationInventors: Kiraneswar Muthuseenu, Samuel Anderson, Takeshi Ishiguro
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Publication number: 20220293531Abstract: A semiconductor device includes a semiconductor layer with opposing first and second main surfaces and a first column extending from the first main surface and having a first concentration of a dopant of the first conductivity type. A trench with a sidewall and bottom extends at least partially through the semiconductor layer from the first main surface. A second column between the trench sidewall and the first column has a second concentration of a dopant of a second conductivity type and is formed in the semiconductor layer and extends from the first main surface. A trench oxide layer is in contact with at least the trench sidewall and the trench bottom. A trench nitride layer covers the trench oxide layer at least on the trench sidewall. A dielectric seal material seals the trench proximate the first main surface of the semiconductor layer such that the trench is air-tight.Type: ApplicationFiled: May 27, 2022Publication date: September 15, 2022Applicant: Icemos Technology CorporationInventors: Kiraneswar Muthuseenu, Samuel Anderson, Takeshi Ishiguro
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Patent number: 11362042Abstract: A semiconductor device includes a semiconductor layer with opposing first and second main surfaces and a first column extending from the first main surface and having a first concentration of a dopant of the first conductivity type. A trench with a sidewall and bottom extends at least partially through the semiconductor layer from the first main surface. A second column between the trench sidewall and the first column has a second concentration of a dopant of a second conductivity type and is formed in the semiconductor layer and extends from the first main surface. A trench oxide layer is in contact with at least the trench sidewall and the trench bottom. A trench nitride layer covers the trench oxide layer at least on the trench sidewall. A dielectric seal material seals the trench proximate the first main surface of the semiconductor layer such that the trench is air-tight.Type: GrantFiled: January 24, 2020Date of Patent: June 14, 2022Assignee: IceMos Technology CorporationInventors: Kiraneswar Muthuseenu, Samuel Anderson, Takeshi Ishiguro
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Publication number: 20090085147Abstract: A method of manufacturing a superjunction device includes providing a semiconductor wafer having at least one die. At least one first trench having a first orientation is formed in the at least one die. At least one second trench having a second orientation that is different from the first orientation is formed in the at least one die.Type: ApplicationFiled: February 15, 2008Publication date: April 2, 2009Applicant: Icemos Technology CorporationInventors: Takeshi Ishiguro, Kenji Sugiura, Hugh J. Griffin
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Publication number: 20090085148Abstract: A method of manufacturing a superjunction device includes providing a semiconductor wafer having a plurality of dies. A first plurality of trenches having a first orientation are formed in a first die. A second plurality of trenches having a second orientation are formed in a second die. The second orientation is different from the first orientation.Type: ApplicationFiled: February 15, 2008Publication date: April 2, 2009Applicant: Icemos Technology CorporationInventors: Takeshi Ishiguro, Kenji Sugiura, Hugh J. Griffin
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Publication number: 20090026586Abstract: A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes doping with a dopant of a second conductivity the first sidewall of the mesa, and doping with a dopant of a second conductivity the second sidewall of the mesa. A dopant of the first conductivity is then used to dope the first sidewall of the mesa, and the dopant of the first conductivity is used to dope the second sidewall of the at least one mesa. At least the trenches adjacent to the at least one mesa are then lined with an oxide material and are then filled with one of a semi-insulating material and an insulating material.Type: ApplicationFiled: April 21, 2006Publication date: January 29, 2009Applicant: ICEMOS TECHNOLOGY CORPORATIONInventor: Samuel Anderson
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Publication number: 20080315269Abstract: A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.Type: ApplicationFiled: September 4, 2008Publication date: December 25, 2008Applicant: ICEMOS TECHNOLOGY CORPORATIONInventors: Robin Wilson, Conor Brogan, Hugh J. Griffin, Cormac MacNamara
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Publication number: 20080315345Abstract: A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.Type: ApplicationFiled: September 4, 2008Publication date: December 25, 2008Applicant: ICEMOS TECHNOLOGY CORPORATIONInventors: Robin Wilson, Conor Brogan, Hugh J. Griffin, Cormac MacNamara
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Publication number: 20080315247Abstract: A bonded-wafer semiconductor device includes a semiconductor substrate, a buried oxide layer disposed on a first main surface of the semiconductor substrate and a multi-layer device stack. The multi-layer device stack includes a first device layer of a first conductivity disposed on the buried oxide layer, a second device layer of a second conductivity disposed on the first device layer, a third device layer of the first conductivity disposed on the second device layer and a fourth device layer of the second conductivity disposed on the third device layer. A trench is formed in the multi-layer device stack. A mesa is defined by the trench. The mesa has first and second sidewalls. A first anode/cathode layer is disposed on a first sidewall of the multi-layer device stack, and a second anode/cathode layer is disposed on the second sidewall of the multi-layer device stack.Type: ApplicationFiled: August 13, 2008Publication date: December 25, 2008Applicant: ICEMOS TECHNOLOGY CORPORATIONInventors: Conor Brogan, Cormac MacNamara, Hugh J. Griffin, Robin Wilson
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Publication number: 20080315368Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the semiconductor substrate. The trench is lined with the dielectric material. The trench is filled with a conductive material. An electrical component is electrically connected to the conductive material exposed at the first main surface. A cap is mounted to the first main surface. The cap encloses the electrical component and the electrical connection.Type: ApplicationFiled: September 2, 2008Publication date: December 25, 2008Applicant: ICEMOS TECHNOLOGY CORPORATIONInventors: Cormac MacNamara, Conor Brogan, Hugh J. Griffin, Robin Wilson
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Publication number: 20080299698Abstract: A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first main surface and sidewalls of the at least one trench. The photodetector includes a second anode/cathode region proximate the second main surface. The second anode/cathode region has a second conductivity opposite the first conductivity. The at least one trench extends to the second main surface of the semiconductor substrate.Type: ApplicationFiled: July 18, 2008Publication date: December 4, 2008Applicant: ICEMOS TECHNOLOGY CORPORATIONInventors: Robin Wilson, Conor Brogan, Hugh J. Griffin, Cormac MacNamara
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Publication number: 20080272429Abstract: Superjunction semiconductor devices having narrow surface layout of terminal structures and methods of manufacturing the devices are provided. The narrow surface layout of terminal structures is achieved, in part, by connecting a source electrode to a body contact region within a semiconductor substrate at a body contact interface comprising at least a first side of the body contact region other than a portion of a first main surface of the semiconductor substrate.Type: ApplicationFiled: December 21, 2007Publication date: November 6, 2008Applicant: ICEMOS TECHNOLOGY CORPORATIONInventor: Takeshi Ishiguro
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Patent number: 7446018Abstract: A bonded-wafer semiconductor device includes a semiconductor substrate, a buried oxide layer disposed on a first main surface of the semiconductor substrate and a multi-layer device stack. The multi-layer device stack includes a first device layer of a first conductivity disposed on the buried oxide layer, a second device layer of a second conductivity disposed on the first device layer, a third device layer of the first conductivity disposed on the second device layer and a fourth device layer of the second conductivity disposed on the third device layer. A trench is formed in the multi-layer device stack. A mesa is defined by the trench. The mesa has first and second sidewalls. A first anode/cathode layer is disposed on a first sidewall of the multi-layer device stack, and a second anode/cathode layer is disposed on the second sidewall of the multi-layer device stack.Type: GrantFiled: August 22, 2006Date of Patent: November 4, 2008Assignee: Icemos Technology CorporationInventors: Conor Brogan, Cormac MacNamara, Hugh J. Griffin, Robin Wilson
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Publication number: 20080258239Abstract: Methods for manufacturing trench type semiconductor devices involve refilling the trenches after high temperature processing steps are performed. The methods allow thermally unstable materials to be used as refill materials for the trenches of the device. Trench type semiconductor devices containing thermally unstable refill materials are also provided. In particular, methods of manufacturing and devices of a trench type semiconductor devices containing organic refill materials are provided.Type: ApplicationFiled: December 21, 2007Publication date: October 23, 2008Applicant: ICEMOS TECHNOLOGY CORPORATIONInventor: Takeshi Ishiguro
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Publication number: 20080258226Abstract: Methods for manufacturing trench type semiconductor devices containing thermally unstable refill materials are provided. A disposable material is used to fill the trenches and is subsequently replaced by a thermally sensitive refill material after the high temperature processes are performed. Trench type semiconductor devices manufactured according to method embodiments are also provided.Type: ApplicationFiled: February 12, 2008Publication date: October 23, 2008Applicant: Icemos Technology CorporationInventor: Takeshi Ishiguro
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Patent number: 7439178Abstract: A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.Type: GrantFiled: February 15, 2007Date of Patent: October 21, 2008Assignee: Icemos Technology CorporationInventors: Robin Wilson, Conor Brogan, Hugh J. Griffin, Cormac MacNamara
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Publication number: 20080248608Abstract: A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the photodiode into a plurality of cells and forming a central trench region in electrical communication with the first active layer beneath each of the cells. Sidewall active diffusion regions extend the trench depth along each sidewall and are formed by doping at least a portion of the sidewalls with a dopant of first conductivity. A first contact electrically communicates with the first active layer beneath each of the cells via the central trench region. A plurality of second contacts each electrically communicate with the second active layer of one of the plurality of cells. The first and second contacts are formed on the front surface of the photodiode.Type: ApplicationFiled: May 7, 2008Publication date: October 9, 2008Applicant: ICEMOS TECHNOLOGY CORPORATIONInventors: Robin Wilson, Conor Brogan, Hugh J. Griffin, Cormac MacNamara
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Publication number: 20080248606Abstract: A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.Type: ApplicationFiled: June 19, 2008Publication date: October 9, 2008Applicant: ICEMOS TECHNOLOGY CORPORATIONInventors: Robin Wilson, Conor Brogan, Hugh J. Griffin, Cormac MacNamara
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Publication number: 20080246122Abstract: A positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode includes a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate is of a first conductivity. The PIN/NIP diode includes at least one trench formed in the first main surface which defines at least one mesa. The trench extends to a first depth position in the semiconductor substrate. The PIN/NIP diode includes a first anode/cathode layer proximate the first main surface and the sidewalls and the bottom of the trench. The first anode/cathode layer is of a second conductivity opposite to the first conductivity. The PIN/NIP diode includes a second anode/cathode layer proximate the second main surface, a first passivation material lining the trench and a second passivation material lining the mesa. The second anode/cathode layer is the first conductivity.Type: ApplicationFiled: May 7, 2008Publication date: October 9, 2008Applicant: ICEMOS TECHNOLOGY CORPORATIONInventors: Robin Wilson, Conor Brogan, Hugh J. Griffin, Cormac MacNamara
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Patent number: 7429772Abstract: A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.Type: GrantFiled: April 27, 2006Date of Patent: September 30, 2008Assignee: Icemos Technology CorporationInventors: Robin Wilson, Conor Brogan, Hugh J. Griffin, Cormac MacNamara