Abstract: In a method for producing a spatially periodic semiconductor layer structure in the form of a superlattice composed of an alternating arrangement of strained semicondutor layers of at least two different semiconductor compositions forming at least one heterojunction, at least one of the semiconductor layers is provided with a doped layer which extends essentially parallel to the heterojunction and whose layer thickness is no greater than the thickness of the semiconductor layer in which it is produced.
Type:
Grant
Filed:
December 8, 1988
Date of Patent:
June 27, 1989
Assignee:
Icentia Patent-Verwaltungs-GmbH
Inventors:
Hans-Joest Herzog, Helmut Jorke, Horst Kibbel