Abstract: A method of a growing an embedded single crystal diamond structure, comprising: disposing a single crystal diamond on a non-diamond substrate, wherein the non-diamond substrate is larger than the single crystal diamond; masking a top portion of the single crystal diamond using a masking material; and using a chemical vapor deposition (CVD) growth chamber, growing polycrystalline diamond material surrounding the single crystal diamond in order to join the single crystal diamond to the polycrystalline diamond material.

Abstract: A system of monitoring and controlling an operation, comprising: an input means, the input means is adapted for user to input user-defined parameters, a middleware application in connection with the input means via a network, the middleware application is in communication with a directory database and also a relational database management system via communication means, a data management system being installed as a slave program in the middleware application and as a slave program in one more external server or external device, the middleware application is in communication with the external servers or device via communication means, whereby the master-slave relation allows exchange of data between the middleware application and the server architecture.

Abstract: A monocrystalline diamond having a corrected full width at half maxima after accounting for the Rayleigh width of a 514.5 nm laser, and exhibiting: a presence or absence of negatively-charged silicon vacancy defect depending on the diamond quality; a concentration level of neutral substitutional nitrogen at an absorption coefficient of 270 nm; an FTIR transmittance value at a 10.6 ?m wavelength; a concentration of positively-charged substitutional nitrogen when the peak height is at 1332.5 cm?1; an absence of nitrogen-vacancy-hydrogen defect species when the wavelength is at 3123 cm?1; normalisation of spectra when the first order Raman peak is at 552.37 nm using 514.5 nm laser excitation; either a black or white sector and having a refractive index of retardation to thickness of diamond plates; or a reddish glow and a blue glow when the diamond is placed under 355 nm laser irradiation at room temperature in the dark.

Abstract: A method utilising microwave plasma chemical vapour deposition (MPCVD) process of producing electronic device grade single crystal diamond comprising of: (a) selecting a diamond seed or substrate having a pre-determined orientation, (b) cleaning and/or etching of non-diamond phases and other induced surface damages from the diamond seed or substrate, whereby this step can be performed one or more times, (c) growing a layer of extremely low crystal defect density diamond surface on the cleaned/etched diamond seed or substrate, whereby this step can be performed one or more times, and (d) growing electronics device grade single crystal diamond on top of the layer of the low crystal defect density diamond surface.

Abstract: A monocrystalline diamond having a corrected full width at half maxima after accounting for the Rayleigh width of a 514.5 nm laser, and exhibiting: a presence or absence of negatively-charged silicon vacancy defect depending on the diamond quality; a concentration level of neutral substitutional nitrogen at an absorption coefficient of 270 nm; an FTIR transmittance value at a 10.6 ?m wavelength; a concentration of positively-charged substitutional nitrogen when the peak height is at 1332.5 cm?1; an absence of nitrogen-vacancy-hydrogen defect species when the wavelength is at 3123 cm?1; normalisation of spectra when the first order Raman peak is at 552.37 nm using 514.5 nm laser excitation; either a black or white sector and having a refractive index of retardation to thickness of diamond plates; or a reddish glow and a blue glow when the diamond is placed under 355 nm laser irradiation at room temperature in the dark.

Abstract: A method of forming mono-crystalline diamond by chemical vapor deposition, the method comprising the steps of: (a) providing at least one diamond seed; (b) exposing the seed to conditions for growing diamond by chemical vapor deposition, including supplying reaction gases that include a carbon-containing gas and hydrogen for growing diamond and include a nitrogen-containing gas; and (c) controlling the quantity of nitrogen-containing gas relative to other gases in the reaction gases such that diamond is caused to grow by step-growth with defect free steps without inclusions. The nitrogen is present in the range of 0.0001 to 0.02 vol %. Diborane can also be present in a range of from 0.00002 to 0.002 vol %. The carbon-containing gas can be methane.