Patents Assigned to Iljin Nanotech Co., Ltd.
  • Patent number: 6759025
    Abstract: A method of synthesizing carbon nanotubes and a carbon nanotube synthesizing apparatus used for the same are provided. A catalyst is introduced into the reactor, and the catalyst in the reactor is selectively and locally heated by a heating method such as microwave irradiation, electromagnetic inductive heating, radio frequency heating or laser heating. Here, carbon source gas, carbon source gas and hydrogen sulfide gas, or carbon source gas and hydrogen gas or inert gas is supplied into the reactor, thereby growing carbon nanotubes from the locally heated catalyst.
    Type: Grant
    Filed: April 27, 2001
    Date of Patent: July 6, 2004
    Assignees: Iljin Nanotech Co., Ltd., Pohang University of Science and Technology Foundation
    Inventors: Eun-Hwa Hong, Kun-Hong Lee, Chang-Mo Ryu, Jong-Hoon Han, Jae-Eun Yoo
  • Patent number: 6648711
    Abstract: A field emitter having a high current density even at a low voltage using a carbon nanotube film, a method of manufacturing the same, and a field emission display device having the field emitter, are provided, The field emitter includes an insulating substrate. a thin film transistor formed on the insulating substrate, the thin film transistor having a semiconductor layer, a source electrode, a drain electrode and a gate electrode, and an electron emitting unit formed of a carbon nanotube film on the drain electrode of the thin film transistor The thin film transistor can be a coplanar-type transistor, a stagger-type transistor, or an inverse stagger-type transistor. The surface of a portion of the drain electrode, which contacts the carbon nanotube film, contains catalytic metal which is transition metal such as nickel or cobalt. Alternatively, the drain electrode itself can be formed of catalytic metal for carbon nanotube growth.
    Type: Grant
    Filed: June 12, 2000
    Date of Patent: November 18, 2003
    Assignee: Iljin Nanotech Co., Ltd.
    Inventors: Jin Jang, Suk-jae Chung, Sung-hoon Lim, Jae-eun Yoo
  • Patent number: 6514113
    Abstract: A white light source using carbon nanotubes and a fabrication method thereof are provided. The white light source includes a metal film which is formed on a lower substrate and used as a cathode, a catalytic metal film formed on the metal film, carbon nanotubes which are vertically aligned on the catalytic metal film for emission of electrons in an applied electric field, spacers mounted on the catalytic metal film, and a transparent upper substrate which has a transparent electrode for an anode and a fluorescent body on the transparent electrode, and which is mounted on the spacers such that the fluorescent body faces the carbon nanotubes. The catalytic metal film is composed of isolated nano-sized catalytic metal particles. The carbon nanotubes are grown from each of the catalytic metal particles to be vertically aligned on the substrate by chemical vapor deposition.
    Type: Grant
    Filed: June 15, 2000
    Date of Patent: February 4, 2003
    Assignees: Iljin Nanotech Co., Ltd.
    Inventors: Cheol-jin Lee, Jae-eun Yoo
  • Patent number: 6454816
    Abstract: A supercapacitor using an electrode formed of a new material is provided. The supercapacitor includes two electrodes facing each other, the electrodes being composed of carbon nanotubes, an electrolyte provided between the two electrodes, and a separator for separating the electrolyte between the two electrodes.
    Type: Grant
    Filed: March 15, 2001
    Date of Patent: September 24, 2002
    Assignee: Iljin Nanotech Co., Ltd.
    Inventors: Young-hee Lee, Kay-hyeok An, Jae-eun Yoo
  • Patent number: 6350488
    Abstract: A method of synthesizing high purity carbon nanotubes vertically aligned over a large size substrate by thermal chemical vapor deposition (CVD). In the synthesis method, isolated nano-sized catalytic metal particles are formed over a substrate by etching, and purified carbon nanotubes are grown vertically aligned, from the catalytic metal particles by thermal CVD using a carbon source gas.
    Type: Grant
    Filed: June 9, 2000
    Date of Patent: February 26, 2002
    Assignee: Iljin Nanotech Co., Ltd.
    Inventors: Cheol-jin Lee, Jae-eun Yoo
  • Patent number: 6331209
    Abstract: An easy method of forming purified carbon nanotubes from which graphitic phase or carbon particles are removed, using a high-density plasma. Carbon nanotubes are grown on a substrate using a plasma chemical vapor deposition method at a high plasma density of 1011 cm−3 or more. The carbon nanotube formation includes: growing a carbon nanotube layer on a substrate to have a predetermined thickness by plasma deposition; purifying the carbon nanotube layer by plasma etching; and repeating the growth and the purification of the carbon nanotube layer. For the plasma etching, a halogen-containing gas, for example, a carbon tetrafluoride gas, is used as a source gas.
    Type: Grant
    Filed: April 21, 2000
    Date of Patent: December 18, 2001
    Assignees: Iljin Nanotech Co., Ltd.
    Inventors: Jin Jang, Suk-jae Chung