Patents Assigned to Imec USA Nanoelectronics Design Center
  • Patent number: 11841563
    Abstract: The present disclosure relates to electro-optic modulators that include caps for optical confinement. One example embodiment includes an electro-optic modulator. The electro-optic modulator includes a first cladding layer. The electro-optic modulator also includes a second cladding layer. In addition, the electro-optic modulator includes a first waveguide. The first waveguide is at least partially encapsulated between the first cladding layer and the second cladding layer. Further, the electro-optic modulator includes a thin-film lithium niobate layer adjacent to the second cladding layer. The thin-film lithium niobate layer is on an opposite side of the second cladding layer from the first waveguide. Additionally, the electro-optic modulator includes a first cap positioned on an opposite side of the thin-film lithium niobate layer from the second cladding layer. The first cap enhances optical confinement within the thin-film lithium niobate layer.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: December 12, 2023
    Assignee: IMEC USA NANOELECTRONICS DESIGN CENTER, Inc.
    Inventors: Swapnajit Chakravarty, Reza Safian
  • Patent number: 11770113
    Abstract: A superconducting circuit comprises a resonator and a Josephson junction. The resonator comprises an inductor and a capacitor. The inductor comprises a first terminal and a second terminal. The second terminal of the inductor is electrically coupled to a first terminal of the capacitor. A second terminal of the capacitor is electrically coupled to a first terminal of the Josephson junction. The terminal shared by the inductor and the capacitor is configured to be electrically coupled to an alternating current (AC) voltage source having a particular frequency and particular phase. The inductance of the inductor and the capacitance of the capacitor are selected to cause the resonator to resonate at a frequency and a phase that substantially match the particular frequency and the particular phase, respectively, of the AC voltage source to facilitate switching a state of the Josephson junction via a single flux quantum (SFQ) pulse.
    Type: Grant
    Filed: December 23, 2021
    Date of Patent: September 26, 2023
    Assignee: IMEC USA NANOELECTRONICS DESIGN CENTER, Inc.
    Inventors: Quentin Paul Herr, Anna Yurievna Herr
  • Patent number: 11409038
    Abstract: The present disclosure relates to polarization rotator-splitters that include oxide claddings. One example embodiment includes a device. The device includes a first waveguide. The first waveguide includes a first end configured to receive electromagnetic waves having a first polarization with a first mode-order and electromagnetic waves having a second polarization. The first waveguide also includes a mode-conversion section configured to convert electromagnetic waves having the second polarization into electromagnetic waves having the first polarization with a second mode-order. Additionally, the device includes a second waveguide. The second waveguide also includes a coupling section configured such that electromagnetic waves having the first polarization with the second mode-order are converted into electromagnetic waves having the first polarization with the first mode-order and coupled from the coupling section of the first waveguide into the coupling section of the second waveguide.
    Type: Grant
    Filed: February 26, 2021
    Date of Patent: August 9, 2022
    Assignee: IMEC USA NANOELECTRONICS DESIGN CENTER, Inc.
    Inventors: Reza Safian, Tianren Fan
  • Patent number: 11223329
    Abstract: A power amplifier circuitry (100) comprises: a transistor stack (110) comprising at least two stacked transistor units (112A, 112B, 112C) for amplifying input signals; wherein each stacked transistor unit (112A, 112B, 112C) comprises a plurality of controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N), each comprising a segment transistor (122, 132, 142), wherein source terminals (123, 133, 143) within each transistor unit are connected, drain terminals (125, 135, 145) within each transistor unit are connected and gate terminals (124, 134, 144) within each transistor unit are connected, wherein each segment transistor (122, 132, 142) further comprises a back gate terminal (126, 136, 146) for setting a body bias, wherein at least two of the segment transistors (122, 132, 142) within each transistor unit have independently connected back gate terminals (126, 136, 146); and a control unit (190) configured to control the body bias for selecting an amplifier class of each of the controllable segme
    Type: Grant
    Filed: February 12, 2020
    Date of Patent: January 11, 2022
    Assignees: IMEC USA NANOELECTRONICS DESIGN CENTER, Inc., IMEC VZW
    Inventors: Aritra Banerjee, Pierre Wambacq
  • Patent number: 11092886
    Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: August 17, 2021
    Assignees: IMEC VZW, Imec USA Nanoelectronics Design Center
    Inventors: Marina Timmermans, Emily Gallagher, Ivan Pollentier, Hanns Christoph Adelmann, Cedric Huyghebaert, Jae Uk Lee
  • Patent number: 10712659
    Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: July 14, 2020
    Assignees: IMEC VZW, Imec USA Nanoelectronics Design Center
    Inventors: Emily Gallagher, Cedric Huyghebaert, Ivan Pollentier, Hanns Christoph Adelmann, Marina Timmermans, Jae Uk Lee
  • Patent number: 10353284
    Abstract: The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: July 16, 2019
    Assignees: IMEC VZW, IMEC USA NANOELECTRONICS DESIGN CENTER
    Inventors: Rik Jonckheere, Cedric Huyghebaert, Emily Gallagher
  • Publication number: 20180329289
    Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.
    Type: Application
    Filed: May 15, 2018
    Publication date: November 15, 2018
    Applicants: IMEC VZW, Imec USA Nanoelectronics Design Center
    Inventors: Emily Gallagher, Cedric Huyghebaert, Ivan Pollentier, Hanns Christoph Adelmann, Marina Timmermans, Jae Uk Lee
  • Publication number: 20180329290
    Abstract: The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.
    Type: Application
    Filed: May 15, 2018
    Publication date: November 15, 2018
    Applicants: IMEC VZW, Imec USA Nanoelectronics Design Center
    Inventors: Rik Jonckheere, Cedric Huyghebaert, Emily Gallagher
  • Publication number: 20180329291
    Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.
    Type: Application
    Filed: May 15, 2018
    Publication date: November 15, 2018
    Applicants: IMEC VZW, Imec USA Nanoelectronics Design Center
    Inventors: Marina Timmermans, Emily Gallagher, Ivan Pollentier, Hanns Christoph Adelmann, Cedric Huyghebaert, Jae Uk Lee