Patents Assigned to Implant Sciences Corporation
  • Patent number: 5980974
    Abstract: An improved coated orthopaedic implant component is disclosed. The implant may be coated with platinum, iridium or other metals for improved characteristics. Ion beam coating orthopaedic parts by ion implanting the parts with zirconium ions while the parts are immersed in an oxygen-containing background gas is also disclosed. The adhesion of the graded interface zirconium oxide surface layer so formed is further improved by the initial removal of surface contamination using an ion bombardment and the deposition of an intermediate layer of platinum or similar metal or silicon between the orthopaedic metal component and the zirconium oxide. Furnace heating results in atomic interdiffusion to enhance adhesion between the surfaces. The zirconium oxide provides a low friction, low wear articulating surface. The graded interface may be characterized by a blackish color and a transition between pure zirconium oxide and pure intermediate layer that extends over a thickness of hundreds of Angstroms.
    Type: Grant
    Filed: April 16, 1996
    Date of Patent: November 9, 1999
    Assignee: Implant Sciences Corporation
    Inventors: Anthony J. Armini, Stephen N. Bunker
  • Patent number: 5919126
    Abstract: A stent according to the systems and methods described herein may include a body formed from a non-radioactive structural material, a radiopaque material coating the body, and a beta-emitting radioisotope ion implanted into the radiopaque material. Optionally, an adhesion layer, such as titanium, vanadium, chromium, iron, cobalt, nickel, or some combination or alloy thereof, may be applied to the body to facilitate adhesion of the radiopaque material. The radiopaque material may include platinum, iridium, rhenium, gold, tantalum, or some combination or alloy thereof. The beta-emitting radioisotope may include sulfur-35 or phosphorous-32 and may be ion implanted into the radiopaque material.
    Type: Grant
    Filed: August 18, 1997
    Date of Patent: July 6, 1999
    Assignee: Implant Sciences Corporation
    Inventor: Anthony J. Armini
  • Patent number: 5898178
    Abstract: An ion source is described for use with conventional and modified ion implantation equipment to improve safety and increase efficiency when generating radioactive ion beams. The ion source is particularly useful with radioactive species that are volatile at room temperature or react with air molecules to form volatile compounds. One or more components of the ion source, such as a cathode, an anode, an electrostatic electron reflector, a vaporizer, a sputter target, a gas line or a plasma chamber, may be mounted on extensible probes within radiation shielded sealable transfer containers. Other components of the ion source may be fixed in a vacuum chamber, which may have one or more valved openings corresponding to the sealable openings in the transfer containers. The components on the probes may be extended into position inside the vacuum chamber for operation of the ion source, and may be retracted into the sealable transfer containers and transported to an area for servicing or repair.
    Type: Grant
    Filed: July 2, 1997
    Date of Patent: April 27, 1999
    Assignee: Implant Sciences Corporation
    Inventor: Stephen N. Bunker
  • Patent number: 5894133
    Abstract: Making a sputter cathode for applying a radioactive material includes obtaining a wafer containing a base material having a stable precursor dissolved therein. The base material is transmutable into a material having a relatively short atomic half-life. The wafer is atomically activated to transmute a portion of the stable precursor into a radioactive material. The base material may be silicon or germanium. The stable precursor may be .sup.31 P and the radioactive material may be .sup.32 P. Atomically activating the wafer may include exposing the wafer to a source of thermal neutrons by, for example, placing the wafer in a high-flux nuclear reactor for approximately four weeks.
    Type: Grant
    Filed: December 18, 1996
    Date of Patent: April 13, 1999
    Assignee: Implant Science Corporation
    Inventor: Anthony J. Armini
  • Patent number: 5855950
    Abstract: A method is disclosed for ion beam treating orthopaedic parts by ion implanting the parts with aluminum ions while the parts are immersed in an oxygen-containing background gas. When the parts are at sufficiently elevated temperature, a highly adherent layer of aluminum oxide is grown which provides a low friction, low wear articulating surface. The interface between the semi-pure aluminum oxide and the substrate orthopaedic part consists of a composition which gradually grades with depth between the grown aluminum oxide and the pure substrate material. This interface has a thickness dependent on the processing parameters, typically hundreds of Angstroms. In an alternative embodiment, the thickness of the alumina layer may be increased by simultaneously depositing aluminum oxide on the parts.
    Type: Grant
    Filed: December 30, 1996
    Date of Patent: January 5, 1999
    Assignee: Implant Sciences Corporation
    Inventor: Stephen N. Bunker
  • Patent number: 5383934
    Abstract: A method is disclosed for ion beam coating orthopaedic parts by ion implanting the parts with zirconium ions while the parts are immersed in an oxygen-containing background gas. A highly adherent surface layer of zirconium oxide is formed which provides a low friction, low wear graded interface for the articulating surface. The graded interface is characterized by a blackish color and a transition between pure zirconia and pure substrate material that extends over a thickness of hundreds of Angstroms. In an alternative embodiment, the thickness of the zirconia coating may be increased by also adding a simultaneous evaporation of zirconium metal on the parts.
    Type: Grant
    Filed: September 13, 1993
    Date of Patent: January 24, 1995
    Assignee: Implant Sciences, Corporation
    Inventors: Anthony J. Armini, Stephen N. Bunker
  • Patent number: 5379712
    Abstract: A method of epitaxially growing a surface layer on a substrate including the steps of coating the substrate surface, with a meltable film, melting the film and implanting ions into he melted film, to deposit ion material onto the coated substrate surface.
    Type: Grant
    Filed: April 26, 1993
    Date of Patent: January 10, 1995
    Assignee: Implant Sciences Corporation
    Inventors: Anthony J. Armini, Stephen N. Bunker