Abstract: The missile comprises a nose, fixed fins or movable fins, gas rudders, propelling nozzles and blast pipe inserts, combustion chamber liners, tail cone, grid fins, fluid elements and radome or subcomponents of these made of carbon fiber-reinforced silicon carbide (C/SiC) and/or carbon fiber-reinforced carbon (C/C) and/or silicon carbide fiber-reinforced silicon carbide (SiC/SiC) which are integrated in a missile structure. The missile components may be made of C/SiC and/or C/C and/or SiC/SiC with continuous fiber reinforcement and/or chopped fiber reinforcement or combinations thereof. The missile components may be prepared by mechanical machining of C/SiC and/or C/C and/or SiC/SiC blanks either in a single piece or by co-infiltration with carbon or silicon or silicon carbide and/or co-siliconizing of separate C/SiC and/or C/C and/or SiC/SiC segments to result in a monolithic structure.

Abstract: In order to produce lightweight mirror structures or other reflecting components, preformed silicon elements of sufficient wall thickness are applied to a CFC or CMC substrate structure with the dimensions of the component to be produced, at a temperature in the range 1300.degree. C. and 1600.degree. C. either in vacuum or in a protective atmosphere. In this way a mirror structure or reflector is formed directly. It is possible to work at temperatures in the range of 300.degree. C. to 600.degree. C. when the silicon is applied in the form of a preform such as a wafer, which is joined to the substrate by way of a zone of a melt eutectic incorporating a nonferrous metal, which is preferably gold. The surfaces are subsequently coated.

Abstract: In order to produce lightweight mirror structures or other reflecting components, preformed silicon elements of sufficient wall thickness are applied to a CFC or CMC substrate structure with the dimensions of the component to be produced, at a temperature in the range 1300.degree. C. and 1600.degree. C. either in vacuum or in a protective atmosphere. In this way a mirror structure or reflector is formed directly. It is possible to work at temperatures in the range of 300.degree. C. to 600.degree. C. when the silicon is applied in the form of a preform such as a wafer, which is joined to the substrate by way of a zone of a melt eutectic incorporating a nonferrous metal, which is preferably gold. The surfaces are subsequently coated.

Abstract: For the production of lightweight reflectors or mirror structures, metallic silicon of sufficient thickness is applied to a CFC or CMC substrate preform structure having the dimensions of the component to be produced by a heat treatment process, in particular at temperatures between 1300.degree. C. and 1600.degree. C. and in a vacuum or in a protective atmosphere. In this way, reflectors or mirror structures are formed directly. It is possible to work at temperatures of 300.degree.-600.degree. C. when the silicon is applied in the form of wafers which are joined to the substrate preform by way a zone of a melt eutectic incorporating a nonferrous metal. Preferably the nonferrous metal is gold.