Patents Assigned to Industry-University Cooperation Foundation Hanyang Univerity
  • Nonvolatile magnetic memory device
    Patent number: 9006848
    Abstract: A nonvolatile magnetic memory device using a magnetic tunneling junction (MTJ) uses as a data storage unit an MTJ including a pinned magnetic layer, a nonmagnetic insulating layer, and a free magnetic layer which are sequentially stacked. The free magnetic layer includes at least one soft magnetic amorphous alloy layer in which zirconium (Zr) is added to a soft magnetic material formed of cobalt (Co) or a Co-based alloy.
    Type: Grant
    Filed: May 10, 2013
    Date of Patent: April 14, 2015
    Assignees: SK Hynix Inc., Industry-University Cooperation Foundation Hanyang Univerity
    Inventor: Wan Jun Park