Patents Assigned to inergy Technology Inc.
  • Publication number: 20130200499
    Abstract: The present invention provides a semiconductor device which includes the following components. A substrate with a first conductivity type has a cell region and a peripheral region thereon, wherein the peripheral region surrounds the cell region. An epitaxial layer having the first conductivity type is disposed on the substrate. A first spiral-shaped region having a second conductivity type is embedded in the epitaxial layer within the peripheral region and encircles the cell region.
    Type: Application
    Filed: February 4, 2013
    Publication date: August 8, 2013
    Applicant: INERGY TECHNOLOGY INC.
    Inventor: Inergy Technology Inc.
  • Patent number: 8310190
    Abstract: An apparatus and a method for detecting a lock error in a sensorless motor are disclosed, where the apparatus includes a multiplexer, a negative booster, a comparator and a timer. The multiplexer can receive a coil voltage from the sensorless motor. The negative booster can receive a neutralizing voltage from the sensorless motor and drop the neutralizing voltage. The comparator can compare the coil voltage with the dropped neutralizing voltage for outputting a zero-crossing signal. The timer can count time duration during the zero-crossing signal maintained at the a logic level and determine the lock error in the sensorless motor when the time duration exceeds a predetermined period.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: November 13, 2012
    Assignee: inergy Technology Inc.
    Inventor: Hsien-Wen Hsu
  • Patent number: 8269444
    Abstract: A system and a method for controlling a sensorless motor are disclosed, where the system includes a motor driver and a zero-crossing detector. The motor driver can drive the sensorless motor. The zero-crossing detector can detect a zero-crossing point when the voltage of one motor coil of the sensorless motor is in a blanking period.
    Type: Grant
    Filed: April 6, 2010
    Date of Patent: September 18, 2012
    Assignee: inergy Technology Inc.
    Inventors: Chien-Chung Tseng, Hsien-Wen Hsu, Chien-Jen Hsieh
  • Patent number: 8188700
    Abstract: An apparatus and a method for driving a sensorless motor are described and shown in the specification and drawings, where the method includes steps as follows. First, a control signal is acquired, where the control signal has information of a predetermined rotational speed. Next, energy is supplied and progressively increased to the sensorless motor, so as to rotate a rotor of the sensorless motor. Then, a position of the rotor is detected. Finally, the energy is gradually regulated so that the sensorless motor is maintained at the predetermined rotational speed.
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: May 29, 2012
    Assignee: inergy Technology Inc.
    Inventors: Chien-Chung Tseng, Hsien-Wen Hsu, Chien-Jen Hsieh
  • Patent number: 8148915
    Abstract: An electronic ballast device includes a stabilizer and a sweep frequency circuit for preheating. The stabilizer includes a first input terminal, a second input terminal and an output terminal connected to a fluorescent lamp. The sweep frequency circuit includes a boost element, an impedance element, a switch and a frequency selective circuit. The boost element includes a first end and a second end separately electrically connected to the first input terminal and the impedance element. The switch includes an input terminal electrically connected to the common contact point of the boost element and the impedance element, an output terminal and a reference voltage input terminal electrically connected to the common contact point of the boost element and the stabilizer. Furthermore, the frequency selective circuit is electrically connected to the output terminal of the switch, the first input terminal of the stabilizer and the second input terminal of the stabilizer.
    Type: Grant
    Filed: September 1, 2009
    Date of Patent: April 3, 2012
    Assignee: Inergy Technology Inc.
    Inventor: Ching-Piao Chen
  • Patent number: 8138047
    Abstract: In the specification and drawing a super junction semiconductor device is disclosed. The super junction semiconductor device comprises a P-type layer, a N+ substrate, a N-type layer, a silicon dioxide layer and a P+ layer. The N+ substrate is disposed under the P-type layer. The N-type layer is disposed on the N+ substrate. The silicon dioxide layer is disposed between the N-type layer and the P-type layer. The P+ layer is disposed on the P-type layer and the N-type layer.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: March 20, 2012
    Assignee: inergy Technology Inc.
    Inventor: Ming-Jang Lin
  • Patent number: 8125071
    Abstract: In the specification and drawing a package structure is described and shown with a first die including a high side driver and at least a first bonding pad, a second die including a low side driver, a high withstand voltage device, a controller coupled with the low side driver and the high withstand voltage device and at least a second bonding pad, and at least one conducting wire, in which the high side driver is coupled through the first bonding pad, the conducting wire, the second bonding pad and the high withstand voltage device to the controller.
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: February 28, 2012
    Assignee: inergy Technology Inc.
    Inventor: Kan-Sheng Kuan
  • Publication number: 20110291573
    Abstract: A resonant power supply for light-emitting devices comprises an inverter including two DC input terminals and two AC output terminals, a resonant circuit connected in series to at least one of the two AC output terminals, and an LED circuit connected in series to the resonant circuit. The inverter is configured to convert a direct current from the two DC input terminals into an alternating current through the two AC output terminals, and the LED circuit emits lights as the alternating current is applied.
    Type: Application
    Filed: May 27, 2010
    Publication date: December 1, 2011
    Applicant: INERGY TECHNOLOGY INC.
    Inventor: KAN SHENG KUAN
  • Publication number: 20110241588
    Abstract: A system and a method for controlling a sensorless motor are disclosed, where the system includes a motor driver and a zero crossing detector. The motor driver can drive the sensorless motor. The zero crossing detector can detect a zero-crossing point when the voltage of one motor coil of the sensorless motor is in a blanking period.
    Type: Application
    Filed: April 6, 2010
    Publication date: October 6, 2011
    Applicant: inergy Technology Inc.
    Inventors: Chien-Chung TSENG, Hsien-Wen HSU, Chien-Jen HSIEH
  • Publication number: 20110074322
    Abstract: An apparatus and a method for detecting a lock error in a sensorless motor are disclosed, where the apparatus includes a multiplexer, a negative booster, a comparator and a timer. The multiplexer can receive a coil voltage from the sensorless motor. The negative booster can receive a neutralizing voltage from the sensorless motor and drop the neutralizing voltage. The comparator can compare the coil voltage with the dropped neutralizing voltage for outputting a zero-crossing signal. The timer can count time duration during the zero-crossing signal maintained at the a logic level and determine the lock error in the sensorless motor when the time duration exceeds a predetermined period.
    Type: Application
    Filed: July 26, 2010
    Publication date: March 31, 2011
    Applicant: INERGY TECHNOLOGY INC.
    Inventor: Hsien-Wen HSU
  • Publication number: 20110062907
    Abstract: An apparatus and a method for driving a sensorless motor are described and shown in the specification and drawings, where the method includes steps as follows. First, a control signal is acquired, where the control signal has information of a predetermined rotational speed. Next, energy is supplied and progressively increased to the sensorless motor, so as to rotate a rotor of the sensorless motor. Then, a position of the rotor is detected. Finally, the energy is gradually regulated so that the sensorless motor is maintained at the predetermined rotational speed.
    Type: Application
    Filed: September 16, 2009
    Publication date: March 17, 2011
    Applicant: INERGY TECHNOLOGY INC.
    Inventors: Chien-Chung TSENG, Hsien-Wen HSU, Chien-Jen HSIEH
  • Patent number: 7746148
    Abstract: A high-side driving circuit is provided, where Q terminal and Q terminal of the latch circuit respectively feed back to the first switch and the second switch, which may control asymmetric impedance, such that the high-side driving circuit can prevent noise.
    Type: Grant
    Filed: November 27, 2008
    Date of Patent: June 29, 2010
    Assignee: inergy Technology Inc.
    Inventor: Hsien-Wen Hsu
  • Publication number: 20100052140
    Abstract: In the specification and drawing a package structure is described and shown with a first die including a high side driver, a second die including a low side driver and at least one conducting wire, wherein the conducting wire is coupled with the first die and the second die.
    Type: Application
    Filed: April 2, 2009
    Publication date: March 4, 2010
    Applicant: INERGY TECHNOLOGY INC.
    Inventor: Kan-Sheng Kuan
  • Publication number: 20090256619
    Abstract: A high-side driving circuit is provided, where Q terminal and Q terminal of the latch circuit respectively feed back to the first switch and the second switch, which may control asymmetric impedance, such that the high-side driving circuit can prevent noise.
    Type: Application
    Filed: November 27, 2008
    Publication date: October 15, 2009
    Applicant: INERGY TECHNOLOGY INC.
    Inventor: Hsien-Wen HSU
  • Publication number: 20090250727
    Abstract: In the specification and drawing a super junction semiconductor device is disclosed. The super junction semiconductor device comprises a P-type layer, a N+ substrate, a N-type layer, a silicon dioxide layer and a P+ layer. The N+ substrate is disposed under the P-type layer. The N-type layer is disposed on the N+ substrate. The silicon dioxide layer is disposed between the N-type layer and the P-type layer. The P+ layer is disposed on the P-type layer and the N-type layer.
    Type: Application
    Filed: April 7, 2009
    Publication date: October 8, 2009
    Applicant: INERGY TECHNOLOGY INC.
    Inventor: MING-JANG LIN