Patents Assigned to INFINEON TECHNOLOGIES AS
  • Patent number: 12009807
    Abstract: A drive circuit configured to apply a slew rate controlled drive signal to the control terminal of a power transistor. The drive circuit may be part of a system that includes one or more sub-circuits in which each sub-circuit includes a regulation loop, a matched replica of the power transistor and regulated voltage node. The voltage reference voltage for each sub-circuit connects to the control terminal of the power switch through a buffer circuit to apply a sequence of voltages to the control terminal of the power switch. A switching controller circuit may manage the operation of the one or more sub-circuits so that the drive circuit may output a precisely controlled voltage profile to the control terminal of the power transistor. The circuit may include a second buffer under the control of the switching controller circuit to further manage the operation of the power transistor.
    Type: Grant
    Filed: February 15, 2022
    Date of Patent: June 11, 2024
    Assignee: Infineon Technologies AG
    Inventors: Marcus Nuebling, Carmelo Giunta
  • Patent number: 12007820
    Abstract: A controller chip includes a first cluster including one or more first controller units, a first power supply grid, a first clock tree structure to supply one or more clock signals, and at least a first power supply input. A second cluster includes one or more second controller units, a second power supply grid, a second clock tree structure to supply one or more clock signals, and at least a second power supply input. A monitoring cluster includes a monitoring circuit configured to: monitor the power supply and the clock signal supply of each of the first cluster and second cluster, and in the event of determining at least one of a power supply failure or a clock signal supply failure in one cluster of the first cluster or the second cluster, indicate the failure to the other cluster to take one or more actions.
    Type: Grant
    Filed: June 3, 2021
    Date of Patent: June 11, 2024
    Assignee: Infineon Technologies AG
    Inventors: Konstantin Ivanchenko, Petru Bacinski, Bejoy Mathews
  • Patent number: 12010215
    Abstract: Determining hash values based on at least two types of hash functions, utilizing a memory that is arranged to store at least one state to be used to determine hash values pursuant to a SHA-3 function, wherein hash values pursuant to any of a SHA-2 function or a SHA-1 function are determined based on the state.
    Type: Grant
    Filed: February 17, 2022
    Date of Patent: June 11, 2024
    Assignee: Infineon Technologies AG
    Inventor: Martin Schlaeffer
  • Patent number: 12009290
    Abstract: A semiconductor module is provided that includes a low side switch, a high side switch and a control chip. The low side switch and the high side switch are arranged laterally adjacent one another and coupled by a switch node connector to form a half bridge circuit. The switch node connector includes two or more branches that have an arrangement with respect to the low side switch and to the high side switch and that each have a cross-sectional area.
    Type: Grant
    Filed: April 18, 2023
    Date of Patent: June 11, 2024
    Assignee: Infineon Technologies Austria AG
    Inventors: Sergey Yuferev, Robert Fehler, Angela Kessler, Gerhard Noebauer, Petteri Palm
  • Patent number: 12009943
    Abstract: A transmitter circuit for a field bus driver includes a first bus terminal and a second bus terminal for connecting a first bus line and, respectively, a second bus line. The transmitter circuit further includes a first supply terminal for receiving a supply voltage and second supply terminal for receiving a reference voltage, a first switching circuit coupled between the first supply terminal and the first bus terminal, and a second switching circuit coupled between the second bus terminal and the second supply terminal. The first switching circuit includes a first transistor and a second transistor, and the second switching circuit includes a third transistor and a fourth transistor. Further, the transmitter circuit comprises control circuitry configured to generate first drive signals for the first transistor and the third transistor and second drive signals for the second transistor and the fourth transistor based on a transmit signal.
    Type: Grant
    Filed: September 7, 2021
    Date of Patent: June 11, 2024
    Assignee: Infineon Technologies AG
    Inventors: Jens Repp, Thorsten Hinderer, Maximilian Mangst, Eric Pihet
  • Patent number: 12009745
    Abstract: An apparatus includes a controller that monitors an error voltage indicating a difference between an output voltage and a setpoint voltage. Based on the monitored error voltage, the controller generates modulation adjustment signals including a frequency adjustment signal and an ON-time adjustment signal. The controller generates a pulse width modulation signal of a first power supply phase in accordance with both the frequency modulation adjustment signal and the ON-time adjustment signal.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: June 11, 2024
    Assignee: Infineon Technologies Austria AG
    Inventors: Venkat Sreenivas, Bikiran Goswami, Benjamim Tang, Todd Bellefeuille, Kang Peng
  • Patent number: 12009361
    Abstract: A method of forming a semiconductor device includes forming a first vertical protection device comprising a thyristor in a substrate, forming a first lateral trigger element for triggering the first vertical protection device in the substrate, and forming an electrical path in the substrate to electrically couple the first lateral trigger element with the first vertical protection device.
    Type: Grant
    Filed: January 23, 2023
    Date of Patent: June 11, 2024
    Assignee: Infineon Technologies AG
    Inventors: Vadim Valentinovic Vendt, Joost Willemen, Andre Schmenn, Damian Sojka
  • Patent number: 12007467
    Abstract: A multiple-input multiple-output (MIMO) radar system, including: a plurality of transmit channels configured to sequentially transmit signals with transmit-channel-designated Doppler division multiplexing (DDM) modulations; and processing circuitry configured to: determine, for each of the transmit channels, an impulse response of phase modulation errors due to DDM coupling of the respective transmit channel from each of the other transmit channels; and generate, based on the impulse response, a reconstruction matrix of modulation DDM coupling factors.
    Type: Grant
    Filed: October 26, 2021
    Date of Patent: June 11, 2024
    Assignee: Infineon Technologies AG
    Inventors: Byung Kwon Park, Sang Ho Nam
  • Publication number: 20240184875
    Abstract: A method can include determining the CS signal has transitioned from inactive to active and receiving at least target address information at a bus interface of the IC device. In response to target address information, retrieving data stored at a corresponding storage location of the IC device. By operation of authentication circuits, generating an authentication value using at least one cryptographic function that includes at least the authentication parameters and the retrieved data. The authentication value can be transmitted with retrieved data from the IC device. Corresponding devices and systems are also disclosed.
    Type: Application
    Filed: May 5, 2023
    Publication date: June 6, 2024
    Applicant: Infineon Technologies LLC
    Inventors: Clifford ZITLAW, Yoav YOGEV, Qamrul HASAN
  • Publication number: 20240186152
    Abstract: A method of processing chips is disclosed. In one example, the method comprises encapsulating mutually spaced chips by an encapsulant comprising a locally curable material. The encapsulated chips with the encapsulant are separated into a plurality of encapsulated chip sections by locally curing selectively portions of the encapsulant covering at least a portion of the chips without curing other portions of the encapsulant apart from the encapsulated chip sections.
    Type: Application
    Filed: November 10, 2023
    Publication date: June 6, 2024
    Applicant: Infineon Technologies AG
    Inventors: Roslie Saini BAKAR, Hock Heng CHONG, Swee Kah LEE, Wei Wei YONG
  • Patent number: 12003179
    Abstract: A power supply includes a storage component to store an output current value representative of a magnitude of output current supplied by an output voltage of a power converter to power a load. The power supply further includes an offset reference generator and a controller. The offset reference generator produces an offset reference signal, the output current value being offset by the offset reference signal. The controller controls generation of the output voltage of the power converter as a function of the offset output current value with respect to a threshold signal (value). Additionally, the controller is configured to detect a startup mode of a power converter operative to convert an input voltage into an output voltage. During the startup mode, the controller: i) produces a threshold signal having a magnitude that varies over time, and ii) controls operation of switches in the power converter as a function of the threshold signal while the power converter is operated in a diode emulation mode.
    Type: Grant
    Filed: October 8, 2021
    Date of Patent: June 4, 2024
    Assignee: Infineon Technologies Austria AG
    Inventors: Keng Chen, Min Chen, James R. Garrett, Danny Clavette, Charles P. Amirault
  • Patent number: 12000718
    Abstract: A rotation sensor system includes a rotatable target object configured to rotate about a rotational axis in a rotation direction; a first millimeter-wave (mm-wave) metamaterial track coupled to the rotatable target object, where the first mm-wave metamaterial track is arranged around the rotational axis, and where the first mm-wave metamaterial track includes a first array of elementary structures having at least one first characteristic that changes around a perimeter of the first mm-wave metamaterial track; at least one transmitter configured to transmit a first electro-magnetic transmit signal towards the first mm-wave metamaterial track, where the first mm-wave metamaterial track converts the first electro-magnetic transmit signal into a first electro-magnetic receive signal; at least one receiver configured to receive the first electro-magnetic receive signal; and at least one processor configured to determine a rotational parameter of the rotatable target object based on the received first electro-magne
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: June 4, 2024
    Assignee: Infineon Technologies AG
    Inventors: Alexander Schossmann, Alexander Bergmann, Dirk Hammerschmidt, Christof Michenthaler
  • Patent number: 12000772
    Abstract: A detector cell for a photoacoustic gas sensor comprises a first layer structure, a second layer structure arranged at the first layer structure and comprising a membrane structure, and a third layer structure arranged at the second layer structure. The first layer structure and the third layer structure hermetically enclose a cavity, wherein the membrane structure is arranged in the cavity.
    Type: Grant
    Filed: April 8, 2022
    Date of Patent: June 4, 2024
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Tobias Mittereder, Christoph Glacer
  • Patent number: 12000714
    Abstract: A rotation angle sensing device is provided, which comprises (i) a magnetic field source that is capable of being mechanically coupled to a rotatable shaft, wherein the shaft is rotatable around a rotation axis, wherein the magnetic field source provides a magnetization which is substantially parallel to the rotation axis and not rotationally symmetric to the rotation axis, wherein the magnet field source comprises or is a permanent magnet; and (ii) at least two magnetic field sensor elements arranged to detect the magnetic field of the magnetic field source, wherein the at least two magnetic field sensor elements are located out of shaft and are placed at the same radial distance from the rotation axis. Also, a method for sensing a rotational angle is suggested.
    Type: Grant
    Filed: September 21, 2020
    Date of Patent: June 4, 2024
    Assignee: Infineon Technologies AG
    Inventor: Udo Ausserlechner
  • Patent number: 12001357
    Abstract: A direct memory access (DMA) circuit is provided. The DMA circuit may include a plurality of groups of direct memory access channels, wherein each of the groups includes at least one DMA channel and a resource usage counter configured to count an execution time in which one of the DMA channels of the group is executed, and an arbiter configured to evaluate a value of the resource usage counter of a group upon a request for execution time by one of the DMA channels of the group, and, taking into account a result of the evaluation, to assign, delay assignment, or deny execution time for using the direct memory access to one of the groups.
    Type: Grant
    Filed: March 4, 2022
    Date of Patent: June 4, 2024
    Assignee: Infineon Technologies AG
    Inventors: Frank Hellwig, Sandeep Vangipuram
  • Patent number: 12001010
    Abstract: An oscillator system includes an oscillator structure configured to oscillate about a first axis according to a first oscillation and oscillate about a second axis according to a second oscillation; a first driver configured to drive the first oscillation, detect first zero-crossing events of the first mirror, and generate a first position signal based on the detected first zero-crossing events; a second driver configured to drive the second oscillation, detect second zero-crossing events of the second mirror, and generate a second position signal based on the detected second zero-crossing events; and a synchronization controller configured to receive the first and the second position signals, and synchronize at least one of a phase or a frequency of the second oscillation with at least one of a phase or a frequency of the first oscillation, respectively, based on the first and the second position signals.
    Type: Grant
    Filed: March 9, 2022
    Date of Patent: June 4, 2024
    Assignee: Infineon Technologies AG
    Inventors: Norbert Druml, Philipp Greiner, Boris Kirillov, Ievgeniia Maksymova, Maksym Sladkov, Hendrikus Van Lierop
  • Patent number: 12000952
    Abstract: A radar device may include a memory to store a program associated with operating the radar device. The radar device may include a decoder to read the program from the memory, and generate a control value and a timestamp based at least in part on the program. The control value may be a value to be provided as an input to a component of the radar device at a time indicated by the timestamp. The radar device may include a first-in first-out (FIFO) buffer to store at least the control value and provide the control value as the input to the component of the radar device at the time indicated by the timestamp.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: June 4, 2024
    Assignee: Infineon Technologies AG
    Inventors: Rainer Findenig, Bernhard Greslehner-Nimmervoll
  • Patent number: 12002740
    Abstract: A printed circuit board including a dielectric insulation layer having a top side facing a first side and a bottom side opposite the first side that faces a second side of the dielectric insulation layer, at least one conducting track formed on the dielectric insulation layer, and one or more conductor rails, wherein each of the one or more conductor rails is mechanically coupled to the dielectric insulation layer, and a first portion of each of the one or more conductor rails is arranged on the first side and a second portion of each of the one or more conductor rails is arranged on the second side of the dielectric insulation layer.
    Type: Grant
    Filed: January 25, 2023
    Date of Patent: June 4, 2024
    Assignee: Infineon Technologies AG
    Inventors: Sebastian Michalski, Guido Bönig
  • Patent number: 12004275
    Abstract: A device is configured to determine a switching pattern comprising a first time range for activating a first plurality of light emitting diodes (LEDs) of a LED module and a second time range for activating a second plurality of LEDs of the LED module. The first plurality of LEDs and the second plurality of LEDs are different. The device is further configured to determine, for each LED of the first plurality of LEDs, a respective timeslot of a plurality of timeslots of the first time range. The device is further configured to output an instruction to a switching device to cause the switching device to couple each LED of the first plurality of LEDs to a supply during the respective timeslot determined for the LED.
    Type: Grant
    Filed: December 20, 2021
    Date of Patent: June 4, 2024
    Assignee: Infineon Technologies AG
    Inventors: Sang Min Lee, Michael Schrodi, Davide Ghedin, Fausto Borghetti, Alberto Trentin
  • Patent number: 12002724
    Abstract: A power semiconductor module includes a substrate of planar sheet metal including a plurality of islands that are each defined by channels that extend between upper and lower surfaces of the substrate, a first semiconductor die mounted on a first one of the islands, a molded body of encapsulant that covers the metal substrate, fills the channels, and encapsulates the first semiconductor die, a hole in the molded body that extends to a recess in the upper surface of the substrate, and a press-fit connector arranged in the hole such an interior end of the press-fit connector is mechanically and electrically connected to the substrate.
    Type: Grant
    Filed: June 16, 2022
    Date of Patent: June 4, 2024
    Assignee: Infineon Technologies Austria AG
    Inventors: Wu Hu Li, Raphael Hellwig, Olaf Hohlfeld, Martin Mayer, Ivan Nikitin