Patents Assigned to Infineon Technologies Austria AG
  • Patent number: 11749454
    Abstract: An apparatus comprises: first windings, second windings, a magnetic core, and multiple tap nodes. The first windings are primary windings of a multi-tapped autotransformer. The second windings are secondary windings of the multi-tapped autotransformer. The first windings and the second windings are wrapped around the magnetic core, the second windings disposed in a series connection between the first windings. The multiple tap nodes providing coupling of the first windings and the second windings to a power supply circuit such as a switched-capacitor converter.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: September 5, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Roberto Rizzolatti, Christian Rainer, Otto Wiedenbauer
  • Patent number: 11736022
    Abstract: A power supply includes a primary winding, a secondary winding, a switch, and a controller. The secondary winding is magnetically coupled to the primary winding. The switch is coupled to the secondary winding and controls a state of current through the secondary winding. The controller controls the state of the switch based on an integrator voltage derived from monitoring a voltage from the secondary winding. For example, the controller activates the switch to an ON state in response to detecting a condition in which the magnitude of the monitored voltage of the secondary winding crosses a threshold value such as a magnitude of an output voltage produced from the secondary winding.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: August 22, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Andrey Malinin, Renato Bessegato, Yong Siang Teo
  • Patent number: 11735352
    Abstract: According to one configuration, an inductor device comprises core material and at least a first electrically conductive path. The core material is fabricated from magnetically permeable material. The first electrically conductive path extends axially through the core material from a proximal end of the inductor device to a distal end of the inductor device. The core material is operable to confine first magnetic flux generated from first current flowing through the first electrically conductive path. The inductor device further includes a gap in the core material. The gap (gas or solid material) has a different magnetic permeability than the core material. Inclusion of the gap in the core material provides a way to tune an inductance of the inductor device and increase a magnetic saturation level of the inductor device. The core material includes any number of electrically conductive paths and corresponding gaps.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: August 22, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Danny Clavette, Gerald Deboy, Roberto Rizzolatti, Otto Wiedenbauer, Yong Zhou
  • Patent number: 11728721
    Abstract: A voltage converter powers a load. The voltage converter includes a first power converter and a second power converter. The first power converter produces an intermediate voltage and a first output current derived from an input voltage. The first power converter supplies the intermediate voltage to the second power converter. The second power converter produces a second output current based on the intermediate voltage received from the first power converter. An output node of the voltage converter outputs a sum of the first output current and the second output current to produce an output voltage.
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: August 15, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Stefano Saggini, Mario Ursino, Roberto Rizzolatti, Gerald Deboy
  • Patent number: 11728746
    Abstract: Disclosed is a current source inverter that includes a combination of normally-on and normally-off switches configured to provide free-wheeling paths for current in case of loss of control signals or gate drive power.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: August 15, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Gerald Deboy, Johann Kolar, Matthias Joachim Kasper, Dominik Bortis, Mattia Guacci
  • Patent number: 11728752
    Abstract: A method of driving a permanent magnet synchronous motor (PMSM) with Field Oriented Control (FOC) includes: generating, by a current controller, control signals for driving motor currents of the PMSM; measuring, by the current controller, current information of the PMSM, including a direct-axis motor current and a quadrature-axis motor current; generating, by a direct-axis current controller, a direct-axis error value based on a difference between a flux weakening reference current and the direct-axis motor current; regulating, by the direct-axis current controller, a direct-axis motor voltage, including generating the direct-axis motor voltage based on the direct-axis error value; and generating and dynamically adapting, by a flux weakening controller, the flux weakening reference current based on changes to the motor load.
    Type: Grant
    Filed: December 7, 2021
    Date of Patent: August 15, 2023
    Assignee: Infineon Technologies Austria AG
    Inventor: Vedant Sadashiv Chendake
  • Patent number: 11728737
    Abstract: An apparatus may include an electric power converter and pre-charge circuitry. The electric power converter may include a first circuit, a second circuit and an energy transfer device. The first circuit may be connected to a power supply. The second circuit may be connected to a load. The energy transfer device may have a first side connected to the first circuit and a second side connected to the second circuit. The pre-charge circuitry may be connected to a capacitor of the first circuit. The capacitor may be connected to the first side of the energy transfer device. The pre-charge circuitry may be configured to charge the capacitor during a pre-charge mode of the electric power converter. The electric power converter may be configured to exit the pre-charge mode and enter an energy transfer mode responsive to a charge level of the capacitor reaching a threshold pre-charge level.
    Type: Grant
    Filed: September 20, 2020
    Date of Patent: August 15, 2023
    Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Daniele Miatton, Kyrylo Cherniak, Hayri Verner Hasou, Erwin Huber, Sergio Morini, Volha Subotskaya
  • Patent number: 11728753
    Abstract: According to some embodiments, a method for controlling a motor comprises generating a stall threshold based on a torque generating current parameter associated with the motor. A motor stall condition is identified based on a torque generating voltage parameter associated with the motor violating the stall threshold. Operation of the motor is adjusted responsive to identifying the motor stall condition.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: August 15, 2023
    Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventor: Vedant Sadashiv Chendake
  • Patent number: 11728790
    Abstract: Electronic circuits are disclosed. One electronic circuit includes: a transistor device having a load path and a drive input; a first drive circuit configured to receive a supply voltage and generate a drive signal for the transistor device based on the supply voltage; and a biasing circuit connected in parallel with the load path of the transistor device. The biasing circuit includes a bias voltage circuit configured to receive the supply voltage and generate a bias voltage higher than the supply voltage based on the supply voltage.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: August 15, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Hans Weber, Franz Hirler, Matteo-Alessandro Kutschak, Andreas Riegler
  • Patent number: 11728250
    Abstract: A semiconductor package includes a first die pad, a first semiconductor die mounted on the first die pad, an encapsulant body of electrically insulating material that encapsulates first die pad and the first semiconductor die, a plurality of package leads that each protrude out of a first outer face of the encapsulant body, a connection lug that protrudes out of a second outer face of the encapsulant body, the second outer face being opposite from the first outer face. The first semiconductor die includes first and second voltage blocking terminals. The connection lug is electrically connected to one of the first and second voltage blocking terminals of the first semiconductor die. A first one of the package leads is electrically connected to an opposite one of the first and second voltage blocking terminals of the first semiconductor die that the first connection lug is electrically connected to.
    Type: Grant
    Filed: May 20, 2021
    Date of Patent: August 15, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Edward Fuergut, Martin Gruber, Herbert Hopfgartner, Bernd Schmoelzer
  • Patent number: 11728427
    Abstract: A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; an electrode structure on or in the semiconductor substrate, the electrode structure including an electrode and an insulating material that separates the electrode from the semiconductor substrate; and a strain-inducing material embedded in the electrode. The electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. The electrode is under either tensile or compressive stress in the first direction. The strain-inducing material either enhances or at least partly counteracts the stress of the electrode in the first direction. Methods of producing the semiconductor device are also described.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: August 15, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Stefan Karner, Oliver Blank, Günter Denifl, Germano Galasso, Saurabh Roy, Hans-Joachim Schulze, Michael Stadtmueller
  • Patent number: 11722056
    Abstract: An apparatus includes a controller. The controller receives feedback associated with a device powered by a power source. Sampling of the feedback associated with the device is susceptible to noise caused by a power converter in a vicinity of the controller. To achieve more accurate sampling of the feedback, the controller adjusts operation of the power converter during a window of time in which the power source powers the device. The adjusted operation reduces noise caused by the power converter such that, during the window of time in which the operation of the power converter is adjusted, the controller derives one or more accurate sample values from the received feedback.
    Type: Grant
    Filed: August 11, 2020
    Date of Patent: August 8, 2023
    Assignee: Infineon Technologies Austria AG
    Inventor: Pablo Yelamos Ruiz
  • Patent number: 11721638
    Abstract: A semiconductor wafer has a semiconductor body, an insulation layer on the semiconductor body, a scribeline region designated to be subjected to a wafer separation processing stage, and an optically detectable reference feature laterally spaced inward from the scribeline region and configured to serve as a reference position during the wafer separation processing stage. A corresponding method of processing the semiconductor wafer, a power semiconductor die and a semiconductor wafer separation apparatus are also described.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: August 8, 2023
    Assignee: Infineon Technologies Austria AG
    Inventor: Oliver Blank
  • Patent number: 11721616
    Abstract: A semiconductor package includes a die pad comprising a die attach surface, a first lead extending away from the die pad, one or more semiconductor dies mounted on the die attach surface, the one or more semiconductor dies comprising first and second bond pads that each face away from the die attach surface, and a distribution element that provides a first transmission path for a first electrical signal between the first lead and the first bond pad of the one or more semiconductor dies and a second transmission path for the first electrical signal between the first lead and the second bond pad of the one or more semiconductor dies. The distribution element comprises at least one integrally formed circuit element that creates a difference in transmission characteristics between the first and second transmission paths.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: August 8, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Stephan Voss, Edward Fuergut, Martin Gruber, Andreas Huerner, Anton Mauder
  • Patent number: 11722053
    Abstract: A method is provided for driving a half bridge circuit that includes a first transistor and a second transistor that are switched in a complementary manner. The method includes generating an off-current during a plurality of turn-off switching events to control a gate voltage of the second transistor; measuring a transistor parameter of the second transistor during a first turn-off switching event during which the second transistor is transitioned to an off state, wherein the transistor parameter is indicative of an oscillation at the first transistor during a corresponding turn-on switching event during which the first transistor is transitioned to an on state; and activating a portion of the off-current for the second turn-off switching event, including regulating an interval length of the second portion for the second turn-off switching event based on the measured transistor parameter measured during the first turn-off switching event.
    Type: Grant
    Filed: December 23, 2021
    Date of Patent: August 8, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Stefan Hermann Groiss, Emanuele Bodano
  • Patent number: 11721754
    Abstract: An enhancement mode Group III nitride-based transistor device includes a body having a first surface and a Group III nitride barrier layer arranged on a Group III nitride channel layer and forming a heterojunction therebetween. A first cell field includes transistor cells and an edge region. Each transistor cell includes source, gate and drain fingers extending substantially parallel to one another on the first surface in a longitudinal direction. The gate finger, arranged laterally between the source and drain fingers, includes a p-doped Group III nitride finger arranged between a metallic gate finger and the first surface. The edge region surrounds the transistor cells and includes an edge termination structure having an isolation ring and a p-doped Group III nitride runner. The isolation ring locally interrupts the heterojunction. The runner, extending transversely to the longitudinal direction, is located laterally between the isolation ring and an end of the drain finger.
    Type: Grant
    Filed: July 7, 2022
    Date of Patent: August 8, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Gerhard Prechtl, Gilberto Curatola, Oliver Haeberlen
  • Patent number: 11721537
    Abstract: A device for controlling trapped ions includes a first substrate. A second substrate is disposed over the first substrate. One or a plurality of first level ion traps is configured to trap ions in a space between the first substrate and the second substrate. One or a plurality of second level ion traps is configured to trap ions in a space above the second substrate. An opening in the second substrate is provided through which ions can be transferred between a first level ion trap and a second level ion trap.
    Type: Grant
    Filed: September 29, 2021
    Date of Patent: August 8, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Clemens Roessler, Silke Auchter, Johanna Elisabeth Roessler, Gerald Stocker
  • Patent number: 11716026
    Abstract: According to one configuration, an inductor device comprises: core material and one or more electrically conductive paths. The core material is magnetically permeable and surrounds (envelops) the one or more electrically conductive paths. Each of the electrically conductive paths extends through the core material of the inductor device from a first end of the inductor device to a second end of the inductor device. The magnetically permeable core material is operative to confine (guide, carry, convey, localize, etc.) respective magnetic flux generated from current flowing through a respective electrically conductive path. The core material stores the magnetic flux energy (i.e., first magnetic flux) generated from the current flowing through the first electrically conductive path.
    Type: Grant
    Filed: May 4, 2021
    Date of Patent: August 1, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Kennith K. Leong, Matthias J. Kasper, Luca Peluso, Gerald Deboy
  • Patent number: 11705810
    Abstract: An apparatus includes a first power converter and a second power converter. The first power converter converts an input voltage into a first output voltage; the second power converter converts the first output voltage into a second output voltage that powers a load. The second power converter includes a switched-capacitor converter combined with a magnetic device. The switched-capacitor converter provides capacitive energy transfer; the magnetic device provides magnetic energy transfer. Additionally, the second power converter provides unregulated conversion of the first output voltage into the second output voltage via the capacitive energy transfer and the magnetic energy transfer. To maintain the magnitude of the second output voltage within a desired range or setpoint value, the first power converter regulates a magnitude of the first output voltage based on comparison of a magnitude of the second output voltage with respect to a desired setpoint reference voltage.
    Type: Grant
    Filed: May 16, 2022
    Date of Patent: July 18, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Roberto Rizzolatti, Christian Rainer
  • Patent number: 11699726
    Abstract: The application relates to a semiconductor die having a semiconductor body including an active region, an insulation layer on the semiconductor body, and a sodium stopper formed in the insulation layer. The sodium stopper is arranged in an insulation layer groove which intersects the insulation layer vertically and extends around the active region. The sodium stopper is formed of a tungsten material filling the insulation layer groove.
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: July 11, 2023
    Assignee: Infineon Technologies Austria AG
    Inventors: Oliver Blank, Christof Altstaetter, Ingmar Neumann