Abstract: An electric assembly includes a semiconductor switching device with a maximum breakdown voltage rating across two load terminals in an off-state. A clamping diode is electrically connected to the two load terminals and parallel to the switching device. A semiconductor body of the clamping diode is made of silicon carbide. An avalanche voltage of the clamping diode is lower than the maximum breakdown voltage rating of the switching device.
Type:
Grant
Filed:
October 21, 2016
Date of Patent:
June 25, 2019
Assignee:
Infineon Techonologies AG
Inventors:
Thomas Basler, Roman Baburske, Johannes Georg Laven
Abstract: A smart card contains a carrier body for receiving at least one system component, which has (in each case) a plurality of electrical components, and which unites the electrical functions for the operation of the smart card. The system component terminates approximately evenly with the top side of the card body of the smart card. At least one of the electrical components is accessible from the top side of the smart card.
Abstract: A method is provided in which a pattern for a phase-shifting mask is firstly corrected in a first correction step. Subsequently, the pattern for the trimming mask is corrected with use of the corrected pattern for the phase-shifting mask in a second correction step. Mask data for the production of very-large-scale integrated circuits can be corrected in a simple manner by means of the two correction steps performed in succession.
Type:
Application
Filed:
August 30, 2001
Publication date:
June 13, 2002
Applicant:
Infineon Techonologies AG
Inventors:
Marco Ahrens, Wilhelm Maurer, Juergen Knobloch, Rainer Zimmerman