Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

Abstract: A tire pressure measurement system (TPMS) includes a capacitor and an integrated circuit configured to receive a supply voltage. The integrated circuit includes a voltage regulator and a measurement unit. The voltage regulator is configured to be turned on and off for predetermined periods of time such that the capacitor is charged and discharged, respectively. The voltage regulator and the capacitor are connected to the measurement unit in order to selectively provide electric charge at a voltage between predetermined upper and lower limits.

Abstract: A method for transmitting data is disclosed, whereby data are transmitted in packets between a first device and a second device, whereby a further device disposed between the first device and the second device analyzes the packets at most for regeneration purposes. The second device transmits data between itself and a third device using DSL technology. During the data transmission between the first device and the second device a comparison of transmission rates takes place.

Abstract: A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO.sub.3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.

Abstract: An integrated synchronous memory has a register which can store a frequency-range information item regarding whether the memory is operated in a first or in a lower, second frequency range in an application. The mode of operation of a subcircuit in the memory can be controlled on the basis of the stored frequency-range information item in the register. A memory configuration having a memory module on which at least one such synchronous memory is disposed contains a controller which can be connected to the memory module and sets the register in the at least one memory. Therefore, optimum functionality of the memory can be ensured both in a high and in a low frequency range of the operating frequency.