Abstract: A semiconductor electronic device structure includes an active area array disposed in a substrate, an isolation structure, a plurality of recessed gate structures, a plurality of word lines, and a plurality of bit lines. The active area array a plurality of active area columns and a plurality of active area rows, defining an array of active areas. The substrate has two recesses formed at the central region thereof. Each recessed gate structure is respectively disposed in the recess. A protruding structure is formed on the substrate in each recess. A STI structure of the isolation structure is arranged between each pair of adjacent active area rows. Word lines are disposed in the substrate, each electrically connecting the gate structures there-under. Bit lines are disposed above the active areas, forming a crossing pattern with the word lines.

Abstract: A method of forming patterns includes the steps of providing a substrate having a target layer thereon; forming a plurality of first resist patterns on the target layer; depositing a directed self-assembly (DSA) material layer in a blanket manner on the first resist patterns, wherein the DSA material layer fills up a gap between the first resist patterns; subjecting the DSA material layer to a self-assembling process so as to form repeatedly arranged block copolymer patterns in the DSA material layer; and removing undesired portions from the DSA material layer to form second resist patterns on the target layer.

Abstract: A semiconductor package includes an RDL interposer having a first side, a second side, and a vertical sidewall extending between the first side and the second side; at least one semiconductor die mounted on the first side of the RDL interposer; a first molding compound disposed on the first side covering the at least one semiconductor die; a plurality of solder bumps or solder balls mounted on the second side; and a second molding compound disposed on the second side surrounding the plurality of solder bumps or solder balls and covering the vertical sidewall of the RDL interposer.

Abstract: A multi-chip semiconductor package includes a lower RDL interposer, a first chip on the lower RDL interposer within a chip mounting area, via components mounted within a peripheral area, and a first molding compound surrounding the first chip and the via components. Each of the via components comprises a substrate portion and a connection portion coupled to the substrate portion. An upper RDL interposer is integrally constructed on the first chip, on the via components, and on the first molding compound. The upper RDL interposer is electrically connected to the connection portion of each of the via components. A second chip is mounted on the upper RDL interposer. A second molding compound surrounds the second chip.

Abstract: A method for fabricating a wafer level package is disclosed. A carrier is provided. A redistributed layer (RDL) layer is formed on the carrier. Semiconductor dies are mounted on the RDL layer. The semiconductor dies are molded with a molding compound, thereby forming a molded wafer. A grinding process is then performed to remove a central portion of the molding compound, thereby forming a recess and an outer peripheral ring portion surrounding the recess. The carrier is then removed to expose a lower surface of the RDL layer. Solder bumps or solder balls are formed on the lower surface of the RDL layer.

Abstract: A fan-out wafer-level-package (FOWLP) is provided. The FOWLP includes a redistribution layer (RDL) comprising a dielectric layer and a first metal layer; a passive device in the first metal layer; a first passivation layer covering a top surface of the RDL; a second passivation layer covering a bottom surface of the RDL; a chip mounted on the first passivation layer; a molding compound around the chip and on the first passivation layer; a via opening penetrating through the second passivation layer, the dielectric layer, and the second passivation layer, thereby exposing a terminal of the chip; a contact opening in the second passivation layer; and a second metal layer in the via opening and the contact opening to electrically connect one electrode of the passive device with the terminal of the chip.

Abstract: A semiconductor package includes a redistributed layer (RDL) interposer having a first side, a second side opposite to the first side, and a vertical sidewall extending between the first side and the second side; at least one semiconductor die mounted on the first side of the RDL interposer; a molding compound disposed on the first side and covering the at least one semiconductor die and the vertical sidewall of the RDL interposer; and a plurality of solder bumps or solder balls mounted on the second side.

Abstract: A multi-device package includes a substrate, at least two device regions, a first redistribution layer, an external chip, a plurality of first connectors and a conductive contact. The two device regions are formed from the substrate, and the substrate has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface and electrically connected to the two device regions, and the external chip is disposed on the first redistribution layer. The first connectors are interposed between the first redistribution layer and the external chip to interconnect the first redistribution layer and the external chip, and the conductive contact is extended from the second surface to the first surface of the substrate to electrically connect the device region.

Abstract: A semiconductor device includes a semiconductor device includes an interposer having a first side and a second side opposite to the first side, wherein the interposer comprises a redistribution layer (RDL), and the RDL comprises a first passivation layer on the first side and a second passivation layer on the second side; at least one active chip mounted on the first passivation layer on the first side through a plurality of first bumps penetrating through the first passivation layer; a molding compound disposed on the first side, the molding compound covering the at least one active chip and a top surface of the first passivation layer; and a plurality of solder bumps mounted on the first passivation layer on the second side.

Abstract: A semiconductor electronic device structure includes a substrate having a trench disposed therein, a gate electrode disposed in the trench, and a gate dielectric layer disposed on the surface in the trench. The substrate and the gate electrode are electrically insulated from each other by the gate dielectric layer. The substrate further has a pair of doped areas. The doped areas each are vertically disposed along the two respective lateral sides of the trench. The doped areas each have a first portion and a second portion arranged atop the first portion. The first portion extends vertically to the portion of the substrate that is aligned to the gate electrode. The lateral dimension of the first portion is smaller than the lateral dimension of the second portion, and the doping concentration of the first portion is lighter than the doping concentration of the second portion.

Abstract: The present disclosure provides a semiconductor device including a substrate, a gate structure, a channel layer, a first active region and a second active region. The gate structure is disposed in the substrate. The channel layer is sandwiched between the gate structure and the substrate. A material of the channel layer is selected from the group consisting of silicon-germanium epitaxial material, silicon-carbon epitaxial material, and a combination thereof. The first active region and the second active region are disposed in the substrate and respectively disposed at opposite sides of the gate structure. A method for manufacturing a semiconductor device is provided herein.

Abstract: A non-floating vertical transistor includes a substrate and a protuberant structure extending from the substrate. A segregating pillar is inside the protuberant structure. A pair of segregated bit-lines which are segregated by the segregating pillar is disposed in the substrate and in the protuberant structure and adjacent to the bottom of the segregating pillar. A gate oxide layer is attached to the sidewall of the protuberant structure. A word-line is adjacent to the gate oxide layer so that the gate oxide layer is sandwiched between the word-line and a doped deposition layer.

Abstract: The present invention provides a novel method of manufacturing the probe unit and a tip assemble and disassemble procedure for test tools, which includes a body with a joint portion and a base portion and a probe tip extending from one side of the base portion opposite to the joint portion, where the probe tip and the base portion are integrally made of same material different from the material of the joint portion.

Abstract: A silicon interposer includes a silicon substrate having a front side and a rear side opposite to the front side; a first integrated circuit chip disposed in the front side of the silicon substrate; a second integrated circuit chip disposed in the front side of the silicon substrate and being in close proximity to the first integrated circuit chip; a dummy kerf region between the first integrated circuit chip and the second integrated circuit chip; and at least a circuit device disposed in the front side of the silicon substrate within the kerf region.

Abstract: A semiconductor device includes a chip having an active surface and a rear surface that is opposite to the active surface; a molding compound covering and encapsulating the chip except for the active surface; and a redistribution layer (RDL) on the active surface and on the molding compound. The RDL is electrically connected to the chip. The RDL includes an organic dielectric layer and an inorganic dielectric hard mask layer on the organic dielectric layer. The RDL further includes metal features in the organic dielectric layer and the inorganic dielectric hard mask layer.

Abstract: A package-on-package (PoP) assembly includes a bottom die package and a top die package mounted on the bottom die package. The bottom die package includes an interposer having a first side and a second side opposite to the first side, at least one chip mounted on the first side within a chip mounting area through a plurality of bumps, a molding compound disposed on the first side, the molding compound covering the at least one chip, and a plurality of peripheral bump structures penetrating through the molding compound within the peripheral area. Each of the peripheral bump structures includes conductive pillar and a partial TMV directly stacked on the conductive pillar. A plurality of solder balls is mounted on the second side of the interposer. The top die package is electrically connected to the peripheral bump structures.

Abstract: A package-on-package (PoP) assembly includes a bottom die package and a top die package. The bottom die package includes an interposer having a first side and a second side, an active chip mounted on the first side within a chip mounting area through first bumps, and a dummy chip mounted on the first side within a peripheral area. The dummy chip is directly mounted on a passivation layer of the interposer. A dielectric layer covers the active chip and the dummy chip. At least one TSV connecter penetrates through the dielectric layer and the dummy chip. A molding compound is disposed on the first side. The molding compound covers the active chip and the TSV chip. Solder bumps are mounted on the second side.

Abstract: A method for forming a cell contact. A substrate having first and second protruding structures is prepared. An etch stop layer is deposited over the substrate. A sacrificial layer is deposited on the etch stop layer. The sacrificial layer is recessed. Spacers are formed on the top surface of the sacrificial layer. A portion of the sacrificial layer not covered by the spacers is etched away, thereby forming a recess. A gap filling material layer is deposited into the recess. An upper portion of the gap filling material layer and the spacers are removed to expose the top surface of the sacrificial layer. The sacrificial layer is removed to form contact holes. A punch etching process is performed to remove the etch stop layer from bottoms of the contact holes. The contact holes is filled up with a conductive material layer.

Abstract: A split contact structure includes a semiconductor substrate having a major surface; a first upwardly protruding structure disposed on the major surface; a first cell contact region in the major surface and being close to the first upwardly protruding structure; a second upwardly protruding structure disposed on the major surface; a second cell contact region in the major surface and being close to the second upwardly protruding structure; a first patterned layer stacked on the first upwardly protruding structure; a second patterned layer stacked on the first upwardly protruding structure; a first contact structure disposed on a sidewall of the first upwardly protruding structure and being in direct contact with the first cell contact region; and a second contact structure disposed on a sidewall of the second upwardly protruding structure and being in direct contact with the second cell contact region.

Abstract: A semiconductor structure includes a substrate, a first through hole disposed in the substrate and filled with conductive material, and a second through hole disposed in the substrate and filled with isolation material, which a Young's modulus of the isolation material is smaller than a Young's modulus of the conductive material to balance stress from the conductive material.