Patents Assigned to Institut Catala de Nanotechnologia
  • Patent number: 8416618
    Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is parallel or perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, wherein it includes a device for causing current to flow through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field having a component along a magnetic field direction that is either parallel or perpendicular to the plane of the central layer and the curr
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: April 9, 2013
    Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia (ICN), Institucio Catalana de Recerca I Estudis Avancats (ICREA)
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
  • Patent number: 8384171
    Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle ? lying in the range 90°±60°, in particular 90°±30°, and more particularly 90°±15° relative to said magnetization direction in order to generate an effective magnetic fiel
    Type: Grant
    Filed: December 3, 2010
    Date of Patent: February 26, 2013
    Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique Et Aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia (ICN), Institucio Catalana de Recerca I Estudis Avancats (ICREA)
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl
  • Patent number: 8350347
    Abstract: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device for causing current to flow through the second outer layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field along a magnetic field direction that is perpendicular to the plane of the central layer.
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: January 8, 2013
    Assignees: Centre National de la Recherche Scientifique, Commissariat a l'Energie Atomique et aux Energies Alternatives, Universite Joseph Fourier, Institut Catala de Nanotechnologia, Institucio Catalana de Recerca I Estudis Avancats (ICREA)
    Inventors: Gilles Gaudin, Ioan Mihai Miron, Pietro Gambardella, Alain Schuhl