Abstract: Field effect semiconductor diodes and improved processing techniques for forming the field effect semiconductor diodes having semiconductor layers forming a source, a body and a drain of a field effect device, the semiconductor layers forming pedestals having an insulating layer and a gate on sides thereof vertically spanning the body and a part of the source and drain layers, and a conductive contact layer over the pedestals making electrical contact with the drain and the gate, the conductive layer being in contact with the body at least one position on each pedestal. The conductive layer may be in contact with the body through at least one opening in the source layer, or the source layer may be a discontinuous doped layer, the body layer extending between the discontinuous doped layer forming the source layer to be in electrical contact with the conductive layer. Other aspects and variations of the invention are disclosed.

Abstract: Field effect semiconductor diodes and improved processing techniques for forming the field effect semiconductor diodes having semiconductor layers forming a source, a body and a drain of a field effect device, the semiconductor layers forming pedestals having an insulating layer and a gate on sides thereof vertically spanning the body and a part of the source and drain layers, and a conductive contact layer over the pedestals making electrical contact with the drain and the gate, the conductive layer being in contact with the body at least one position on each pedestal. The conductive layer may be in contact with the body through at least one opening in the source layer, or the source layer may be a discontinuous doped layer, the body layer extending between the discontinuous doped layer forming the source layer to be in electrical contact with the conductive layer. Other aspects and variations of the invention are disclosed.

Abstract: A technique, for drawing power from the external signal circuit to power on-chip elements for an integrated circuit diode (ICD), utilizes an integrated diode and capacitor. The capacitor is charged by the external applied voltage during the time the ICD blocks the external current flow. The charged capacitor then acts as a battery to power the on-chip circuits to provide active control for the ICD function. This ICD could be provided as a two terminal discrete diode, or integrated onto a larger IC. This same technique can be utilized for a “self powered” MOSFET IC (ICM), utilizing a low power logic signal to trigger an internal circuit which would provide a much larger gate drive than the logic signal could provide. This could also be provided as discrete three terminal components, or integrated into a larger IC.

Abstract: Trench MOSFETs and self aligned processes for fabricating trench MOSFETs. These processes produce a higher density of trenches per unit area than can be obtained using prior art masking techniques. The invention self aligns all processing steps (implants, etches, depositions, etc.) to a single mask, thus reducing the pitch of the trenches by the added distances required for multiple masking photolithographic tolerances. The invention also places the source regions and contacts within the side walls of the trenches, thus eliminating the lateral dimensions required, for masking and source depositions or implants from the top surface, from the pitch of the trenches. Various embodiments are disclosed.

Abstract: Methods and apparatus of forming a semiconductor device using pedestals and sidewalls. The pedestals and sidewalls may provide an etch stop and/or a diffusion barrier during manufacture of a semiconductor device. Processes of forming diode connected vertical cylindrical field effect devices are disclosed to exemplify the use of the pedestals and/or sidewalls. A system for forming the pedestals and sidewalls is described.