Abstract: A light emitting device comprises: a solid-state light emitter which generates blue excitation light with a dominant wavelength from 440 nm to 470 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength from 500 nm to 575 nm; a broadband orange to red photoluminescence material which generates light with a narrowband peak emission wavelength from 580 nm to 620 nm; and a narrowband red manganese-activated fluoride phosphor which generates light with a peak emission wavelength from 625 nm to 635 nm. The device generates white light with a spectrum having a broad emission peak from about 530 nm to about 600 nm and a narrow emission peak and wherein the ratio of the peak emission intensity of the broad emission peak to the peak emission intensity of the narrow emission peak is at least 20%.

Abstract: There is provided a full spectrum white light emitting device comprising: a broadband LED flip chip that generates broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm; and at least one photoluminescence layer covering a light emitting face of the broadband LED flip chip; wherein the broadband LED flip chip comprises a broadband InGaN/GaN multiple quantum wells LED chip comprising multiple different wavelength quantum wells in its active region that generate multiple narrowband light emissions of multiple different wavelengths and wherein broadband light generated by the broadband LED flip chip is composed of a combination of the multiple narrowband light emissions, and wherein the at least one photoluminescence material layer comprises a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 n

Abstract: Light emitting devices and LED-filaments comprise an excitation source (e.g. LED) and a photoluminescence material comprising a combination of a first narrow-band red photoluminescence material which generates light with a peak emission wavelength in a range 580 nm to 628 nm and a full width at half maximum emission intensity in a range 45 nm to 60 nm and a second narrow-band red photoluminescence material generates light with a peak emission wavelength in a range 628 nm to 640 nm and a full width at half maximum emission intensity in a range 5 nm to 20 nm. At least one of the first and second narrow-band red photoluminescence materials can comprise a narrow-band red phosphor or a quantum dot (QD) material.

Abstract: There is provided a light emitting device, for example a grow-light, comprising: a grow-light comprising: a broadband blue solid-state light source that generates broadband blue light with a peak emission wavelength from 420 nm to 495 nm and a full width at half maximum of at least 30 nm. It may be that the broadband blue light substantially matches at least one of: the absorption peak wavelength of chlorophyll-a; the absorption peak wavelength of chlorophyll-b; and the absorption peak wavelength of carotenoid.

Abstract: A display backlight, comprises: an excitation source, LED (146), for generating blue excitation light (148) with a peak emission wavelength in a wavelength range 445 nm to 465 nm; and a photoluminescence wavelength conversion layer (152). The photoluminescence wavelength conversion layer (152) comprises a mixture of a green-emitting photoluminescence material with a peak emission in a wavelength range 530 nm to 545 nm, a red-emitting photoluminescence material with a peak emission in a wavelength range 600 nm to 650 nm and particles of light scattering material.

Abstract: A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

Abstract: A full spectrum white light emitting device comprising: a broadband solid-state excitation source operable to generate broadband blue excitation light; and at least one photoluminescence material which generates green to red light, wherein the device generates white light whose intensity over the blue to cyan region of the spectrum has a maximum percentage deviation from the intensity of light of a black-body or CIE Standard Illuminant D of less than 50%.

Abstract: Light emitting devices and LED-filaments comprise an excitation source (e.g. LED) and a photoluminescence material comprising a combination of a first narrow-band red photoluminescence material which generates light with a peak emission wavelength in a range 580 nm to 628 nm and a full width at half maximum emission intensity in a range 45 nm to 60 nm and a second narrow-band red photoluminescence material generates light with a peak emission wavelength in a range 628 nm to 640 nm and a full width at half maximum emission intensity in a range 5 nm to 20 nm. At least one of the first and second narrow-band red photoluminescence materials can comprise a narrow-band red phosphor or a quantum dot (QD) material.

Abstract: A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.

Abstract: There is provided a display backlight (604), including an excitation source (644) for generating blue light (650); and a wavelength converter (654) being a unitary construction including a combination of a wavelength selective filter layer (658) bonded to a photoluminescence layer (660), where the photoluminescence layer (658) includes a green photoluminescence material and a red photoluminescence material; and where the wavelength selective filter layer (658) is transmissive to blue light and reflective to green and red light.

Abstract: There is provided a light emitting device, for example a grow-light, comprising: a grow-light comprising: a broadband blue solid-state light source that generates broadband blue light with a peak emission wavelength from 420 nm to 495 nm and a full width at half maximum of at least 30 nm. It may be that the broadband blue light substantially matches at least one of: the absorption peak wavelength of chlorophyll-a; the absorption peak wavelength of chlorophyll-b; and the absorption peak wavelength of carotenoid.

Abstract: An LED-filament comprising: a partially light-transmissive substrate; a plurality of blue LED chips mounted on a front face of the substrate; first broad-band green to red photoluminescence materials and a first narrow-band manganese-activated fluoride red photoluminescence material covering the plurality of blue LED chips and the front face of the substrate; and second broad-band green to red photoluminescence materials covering the back face of the substrate. The LED-filament can further comprise a second narrow-band manganese-activated fluoride red photoluminescence material on the back face of the substrate in an amount that is less than 5 wt % of a total red photoluminescence material content on the back face of the substrate.

Abstract: A full spectrum white light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range from about 490 nm to about 680 nm; and a broadband solid-state excitation source operable to generate broadband excitation light with a dominant wavelength in a range from about 420 nm to about 480 nm. The device is operable to generate white light with a Correlated Color Temperature in a range from about 1800K to about 6800K, a CRI R9 less than 90, a spectrum whose intensity decreases from its maximum value in the orange to red region of the spectrum to about 50% of the maximum value at a wavelength in a range from about 645 nm to about 695 nm, and over a wavelength range from about 430 nm to about 520 nm, a maximum percentage intensity deviation of light emitted by the device is less than 60% from the intensity of light of at least one of a black-body curve and CIE Standard Illuminant D of the same Correlated Color Temperature.

Abstract: A display backlight, comprises: an excitation source, LED (146), for generating blue excitation light (148) with a peak emission wavelength in a wavelength range 445 nm to 465 nm; and a photoluminescence wavelength conversion layer (152). The photoluminescence wavelength conversion layer (152) comprises a mixture of a green-emitting photoluminescence material with a peak emission in a wavelength range 530 nm to 545 nm, a red-emitting photoluminescence material with a peak emission in a wavelength range 600 nm to 650 nm and particles of light scattering material.

Abstract: A white light emitting device includes a solid-state excitation source operable to generate excitation light having a dominant wavelength ranging from 440 nm to 455 nm; a first photoluminescence material which generates light having a peak emission wavelength ranging from 500 nm to 530 nm; and a second photoluminescence material which generates light having a peak emission wavelength ranging from 640 nm to 690 nm, where the device is operable to generate white light with an IEC TM-30 Gamut Index Rg ranging from 105 to 115. The device can be operable to generate white light having an IEC TM-30 Fidelity Index Rf which ranges from 85 to 95 and a sum of Gamut Index Rg and fidelity index Rf is greater than or equal to 195 and less than or equal to 200.

Abstract: A light emitting device (LED-Filament) comprises: a light-transmissive substrate; at least one blue LED chip mounted on the light-transmissive substrate, for instance mounted on a face thereof; and a photoluminescence material at least partially covering the at least one blue LED chip. The photoluminescence material comprises narrow-band red phosphor particles that generates light with a peak emission wavelength in a range of 600 nm to 640 nm and a full width at half maximum emission intensity of 50 nm to 60 nm. The light emitting device is characterized by CRI Ra greater than or equal to about 90. The narrow-band red phosphor particles can comprise at least one Group IIA/IIB selenide sulfide-based phosphor material such as for example CaSe1?xSx:Eu (CSS phosphor).

Abstract: A coated phosphor may comprise: phosphor particles comprised of a phosphor with composition (M)(A)2S4:Eu, wherein: M is at least one of Mg, Ca, Sr and Ba; and A is at least one of Ga, Al, In, Y; a dense impermeable (pinhole-free) coating of an oxide material encapsulating individual ones of the phosphor particles. The coated phosphor is configured to satisfy one or more of the conditions: (1) under excitation by blue light, the reduction in photoluminescent intensity at the peak emission wavelength after 1,000 hours of aging at about 85° C. and about 85% relative humidity is no greater than about 30%; (2) the change in chromaticity coordinates CIE(y), ?CIE y, after 1,000 hours of aging at about 85° C. and about 85 % relative humidity is less than about 5×10?3; (3) said coated phosphor does not turn black when suspended in a 1 mol/L silver nitrate solution for at least two hours at 85° C.

Abstract: A coated phosphor comprises: phosphor particles comprised of a phosphor with composition MSe1?xSx:Eu, wherein M is at least one of Mg, Ca, Sr, Ba and Zn and 0<x<1.0; and a coating on individual ones of the phosphor particles, the coating comprising a layer of oxide material encapsulating the individual phosphor particles; wherein the coated phosphor is configured such that under excitation by a blue LED the reduction in photoluminescent intensity at the peak emission wavelength after 1,000 hours of aging at about 85° C. and about 85% relative humidity is no greater than about 15%; and wherein the coated phosphor is configured such that the change in chromaticity coordinates CIE(x), ?x, after 1,000 hours of aging at about 85° C. and about 85% relative humidity is less than or equal to about 5×10?3.

Abstract: An LED-filament includes a light-transmissive substrate; a first array of LED chips on a front face of the substrate; a second array of LED chips on the front face of the substrate; a first photoluminescence arrangement covering the first array of LED chips; and a second photoluminescence arrangement covering the second array of LED chips; where the first array of LED chips and the first arrangement generate light of a first color temperature and the second array of LED chips and the second arrangement generate light of a second color temperature.

Abstract: A exemplary light emitting device includes an excitation source operable to generate excitation light with a dominant wavelength in a range 450 nm to 470 nm; a red photoluminescence material which generates light with a peak emission wavelength in a range 600 nm to 620 nm with a full width at half maximum emission intensity greater than 70 nm and less than 80 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength in a range 530 nm to 550 nm; and a narrow-band red photoluminescence material which generates light with a peak emission wavelength in a range 625 nm to 635 nm with a full width at half maximum emission intensity greater than about 5 nm and less than about 25 nm.