Abstract: The invention discloses a gate controlled semiconductor device in which a gate electrode is substantially divided into many pieces. And the semiconductor device comprises a semiconductive element having at least one P-N junction formed by at least a pair of P-type diffusion regions and N-type diffusion regions, a cathode assembly including a metallic layer deposited on a cathode-emitter layer formed on a surface of said semiconductive element, an anode electrode assembly and gate electrode assemblies which includes a plural separated metallic layers provided around the cathode electrode assemblies of the cathode-emitter layer.