Patents Assigned to International Superconductivity Technology Center, The Juridical Foundation
  • Publication number: 20090239753
    Abstract: A method of manufacturing a superconducting thin film material includes a vapor phase step of forming a superconducting layer by a vapor phase method and a liquid phase step of forming a superconducting layer by a liquid phase method so that the latter superconducting layer is in contact with the former superconducting layer. Preferably, the method further includes the step of forming an intermediate layer between the former superconducting layer and a metal substrate. The metal substrate is made of a metal, and preferably the intermediate layer is made of an oxide having a crystal structure of any of rock type, perovskite type and pyrochlore type, and the former superconducting layer and the latter superconducting layer both have an RE123 composition. Accordingly, the critical current value can be improved.
    Type: Application
    Filed: January 17, 2007
    Publication date: September 24, 2009
    Applicant: International Superconductivity Technology Center, the Juridical Foundation
    Inventors: Shuji Hahakura, Kazuya Ohmatsu, Munetsugu Ueyama, Katsuya Hasegawa
  • Publication number: 20090137400
    Abstract: A superconducting thin film material that can realize attainment of an excellent property such as a high JC and a high IC and reduction of costs at the same time includes an orientated metal substrate and an oxide superconductor film formed on the orientated metal substrate. The oxide superconductor film includes a physical vapor deposition HoBCO layer formed by a physical vapor deposition method, and a metal organic deposition HoBCO layer formed on the physical vapor deposition HoBCO layer by a metal organic deposition method.
    Type: Application
    Filed: April 20, 2007
    Publication date: May 28, 2009
    Applicants: Sumitomo Electric Industries, Ltd., International Superconductivity Technology Center, the Juridical Foundation
    Inventors: Shuji Hahakura, Kazuya Ohmatsu, Munetsugu Ueyama, Katsuya Hasegawa
  • Patent number: 7453340
    Abstract: Tape-shaped superconducting wires, and a superconducting coil formed from said wires, wherein a plurality of electrically separated superconducting film parts, each having a rectangular cross section and arranged in parallel, form parallel conductors, providing superconducting wires capable of containing losses incurred in the presence of alternating current (A/C). A superconducting coil is made by winding the superconducting wires, wherein the coil structure contains at least a part wherein perpendicular interlinkage magnetic fluxes acting among conductor elements of the parallel conductors by the distribution of magnetic fields generated by the superconducting coils cancel mutually in order to contain circulating current within the wires and to make shunt current uniform, thereby providing a low-loss A/C superconducting coil.
    Type: Grant
    Filed: July 13, 2004
    Date of Patent: November 18, 2008
    Assignees: International Superconductivity Technology Center, The Juridical Foundation, Fuji Electric Systems Co., Ltd., Fujikura Ltd.
    Inventors: Kazuo Funaki, Masataka Iwakuma, Takanobu Kisu, Akira Tomioka, Toshio Uede, Hiroshi Fuji, Teruo Izumi, Yuh Shiohara
  • Patent number: 7449769
    Abstract: A superconducting system that includes an interface circuit capable of making the best use of a high-speed superconducting circuit and a high-speed semiconductor circuit. A multi-chip module in which an Nb superconducting circuit having Josephson junctions formed by the use of Nb and an oxide high-temperature superconducting latch interface circuit having Josephson junctions formed by the use of an oxide high-temperature superconductor are connected is located in a low temperature environment kept at 4.2 K. The oxide high-temperature superconducting latch interface circuit is connected to a high-speed semiconductor amplifier and a signal outputted from the Nb superconducting circuit is transmitted to the high-speed semiconductor amplifier.
    Type: Grant
    Filed: May 30, 2006
    Date of Patent: November 11, 2008
    Assignees: Fujitsu Limited, International Superconductivity Technology Center, The Juridical Foundation
    Inventor: Tsunehiro Hato
  • Patent number: 7417425
    Abstract: A continuous observation apparatus of magnetic flux distribution in which a long sample containing a superconducting material or magnetic material is transferred to an observation position and magnetic flux is observed sequentially at each of certain areas along a longitudinal direction of the sample is provided. A method of continuously observing magnetic flux by which a long sample containing a superconducting material or magnetic material is transferred to an observation position and magnetic flux is observed sequentially at each of certain areas along a longitudinal direction of the sample is also provided.
    Type: Grant
    Filed: September 5, 2006
    Date of Patent: August 26, 2008
    Assignees: International Superconductivity Technology Center,the Juridical foundation, Fujikura Ltd.
    Inventors: Takato Machi, Noriko Chikumoto, Koichi Nakao, Hiroshi Fuji, Yutaka Kitoh, Teruo Izumi, Yuh Shiohara
  • Patent number: 7394338
    Abstract: In one embodiment, a superconducting coil includes a tertiary parallel superconductor unit (60) composed of superposed in parallel a plurality of layers of secondary parallel superconductor units (50). The layers of secondary parallel superconductor units include a plurality of superconductor elements (40) arranged in parallel along the axial direction of the coil, forming a superconducting conductor unit. The tertiary parallel superconductor unit is wound on a bobbin (55). In another embodiment, the superconducting coil includes one or more layers of the secondary parallel superconductor unit wound on the bobbin. In both embodiments, the secondary parallel superconductor unit can include at least one non-superconducting conductor element (70). The layer of the secondary parallel superconductor unit forming an outer side of the tertiary parallel superconductor unit can include at least one non-superconducting conductor element.
    Type: Grant
    Filed: January 12, 2006
    Date of Patent: July 1, 2008
    Assignees: Fuji Electric Systems Co., Ltd., Fujikura Ltd., Railway Technical Research Institute, Superconductivity Research Laboratory, International Superconductivity Technology Center, The Juridical Foundation, Kyushu Electric Power Co., Inc.
    Inventors: Masataka Iwakuma, Akira Tomioka, Masayuki Konno, Hiroshi Fuji, Kenji Suzuki, Teruo Izumi, Yuh Shiohara, Hidemi Hayashi
  • Patent number: 7378865
    Abstract: A superconducting circuit includes a first transformer to produce a first alternating-current output at a secondary-side inductor, a second transformer to produce a second alternating-current output at a secondary-side inductor, a first pulse generating circuit to produce a single flux quantum pulse responsive to the first alternating-current output, a second pulse generating circuit to produce a single flux quantum pulse responsive to the second alternating-current output, and a confluence buffer circuit to merge the single flux quantum pulses from the pulse generating circuits, wherein each of the pulse generating circuits includes a superconducting loop including the secondary-side inductor, a first Josephson junction situated in the superconducting loop to generate the single flux quantum pulse, and a second Josephson junction situated in the superconducting loop, a threshold value of the second Josephson junction for an electric current flowing through the secondary-side inductor being different from tha
    Type: Grant
    Filed: September 1, 2006
    Date of Patent: May 27, 2008
    Assignees: Fujitsu Limited, International Superconductivity Technology Center, The Juridical Foundation
    Inventors: Atsushi Taguchi, Takuya Himi, Hideo Suzuki, Akira Yoshida, Keiichi Tanabe
  • Patent number: 7323711
    Abstract: A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the second electrode layer (6) is greater than the width of the first electrode layer (5). The first electrode layer (5) and the second electrode layer (6) touch in part, and are separated via a first insulation layer (7) in remaining part. Because the ramp-edge junction includes the first electrode layer (5) and the second electrode layer (6), the inductance of the ramp-edge junction can be reduced with the critical current density Jc being kept at a high level.
    Type: Grant
    Filed: July 27, 2004
    Date of Patent: January 29, 2008
    Assignees: FUJITSU Limited, International Superconductivity Technology Center, the Juridical Foundation
    Inventors: Hideo Suzuki, Masahiro Horibe, Keiichi Tanabe
  • Patent number: 7307046
    Abstract: To provide a composition for a thick oxide superconducting film containing a copper salt of a branched saturated aliphatic carboxylic acid having 6 or more carbon atoms and/or a copper salt of an alicyclic carboxylic acid having 6 or more carbon atoms, which is suitable for producing thick copper based oxide superconducting films by the MOD process and which can be subjected to film formation with uniformity at a high speed, and an oxide superconductor in the form of a thick film tape which is subjected to film formation with uniformity at a high speed using the subject composition for a thick oxide superconducting film.
    Type: Grant
    Filed: November 7, 2003
    Date of Patent: December 11, 2007
    Assignees: International Superconductivity Technology Center, The Juridical Foundation, Adeka Corporation, SWCC Showa Cable Systems Co., Ltd.
    Inventors: Honjo Tetsuji, Tokunaga Yoshitaka, Izumi Teruo, Shiohara Yuh, Goto Tomotaka, Yoshinaka Atsuya, Yajima Akimasa
  • Publication number: 20070281861
    Abstract: The present invention provides a superconducting device including a substrate, a first superconducting pattern formed on the substrate, an insulating pattern formed on the first superconducting pattern, and a second superconducting pattern formed at the uppermost level in the multilayered superconducting pattern. A barrier layer of a Josephson junction is formed on the lower side of, or within the second superconducting pattern. The second superconducting pattern constitutes a circuit element on the insulating pattern.
    Type: Application
    Filed: May 30, 2007
    Publication date: December 6, 2007
    Applicants: FUJITSU LIMITED, INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION
    Inventors: Yoshihiro Ishimaru, Yoshinobu Tarutani, Keiichi Tanabe
  • Patent number: 7268713
    Abstract: A circuit includes a latch circuit including a Josephson junction and configured to perform a latch operation based on a hysteresis characteristic in response to a single flux quantum, a load circuit including load inductance and load resistance and coupled to an output of the latch circuit, and a reset circuit provided between the output of the latch circuit and the load circuit and configured to reset the latch circuit a predetermined time after the latch operation by the latch circuit, wherein the Josephson junction is driven by a direct current.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: September 11, 2007
    Assignees: Fujitsu Limited, International Superconductivity Technology Center, The Juridical Foundation
    Inventors: Hideo Suzuki, Keiichi Tanabe
  • Publication number: 20070184986
    Abstract: RE superconductive layer excelling in Jc and Tc is formed on an interlayer capable of preventing cracking and diffusion of substrate-constituting Ni element into YBCO layer and excelling in crystallinity and surface smoothness. The interlayer is formed by coating a surface of metal substrate with a mixed solution composed of an organometallic acid salt of cerium, an organometallic acid salt of a solid solution formation element capable of forming a solid solution with cerium and an organometallic acid salt of a charge compensation element capable of compensating for a charge mismatch attributed to a difference between the electron valences of respective ions of cerium and the solid solution formation element and subsequently carrying out heat treatment in a reducing atmosphere of 900 to 1200° C. whose pressure ranges from 0.1 Pa to below atmospheric pressure. Thereafter, a rare earth oxide superconductive layer is formed on the interlayer.
    Type: Application
    Filed: March 12, 2004
    Publication date: August 9, 2007
    Applicants: International Superconductivity Technology Center, The Juridical Foundation, Showa Electric Wire & Cable Co., Ltd.
    Inventors: Yuji Aoki, Yasuo Takahashi, Takayo Hasegawa
  • Publication number: 20070145100
    Abstract: The present invention is configured such that, in a low AC loss oxide superconductor constituted by providing an oxide superconducting layer 6 on a substrate 1, said oxide superconducting layer 6 is separated into a plurality of filament conductors 2 in parallel to the lengthwise direction of said substrate 1 by dividing grooves 3 plurally formed in the widthwise direction of said substrate, and a high-resistance oxide 8 is formed in said dividing grooves 3. Because of the invention, it is possible to increase the insulation properties of individually divided mated filament conductors, and to obtain an oxide superconductor that has low AC loss.
    Type: Application
    Filed: November 16, 2006
    Publication date: June 28, 2007
    Applicants: RAILWAY TECHNICAL RESEARCH INSTITUTE, International Superconductivity Technology Center, the Juridical Foundation Eishin Kaihatsu BLDG, Kyushu University, National University Corporation
    Inventors: Kenji Suzuki, Saburo Hoshi, Junko Matsuda, Teruo Izumi, Yuh Shiohara, Masataka Iwakuma
  • Publication number: 20070128735
    Abstract: A method of fabrication of an RE-Ba-Cu—O-based oxide superconductor, characterized by using an RE-Ba-O-based compound (RE being one type or two types or more of rare earth elements) and a Ba-Cu-O-based material for liquid phase as a starting material, melting the material for liquid phase, then growing the crystal.
    Type: Application
    Filed: July 12, 2005
    Publication date: June 7, 2007
    Applicant: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION
    Inventors: Naomichi Sakai, Anming Hu, Shinya Nariki, Masato Murakami, Izumi Hirabayashi
  • Publication number: 20070069339
    Abstract: A superconducting system that includes an interface circuit capable of making the best use of a high-speed superconducting circuit and a high-speed semiconductor circuit. A multi-chip module in which an Nb superconducting circuit having Josephson junctions formed by the use of Nb and an oxide high-temperature superconducting latch interface circuit having Josephson junctions formed by the use of an oxide high-temperature superconductor are connected is located in a low temperature environment kept at 4.2 K. The oxide high-temperature superconducting latch interface circuit is connected to a high-speed semiconductor amplifier and a signal outputted from the Nb superconducting circuit is transmitted to the high-speed semiconductor amplifier.
    Type: Application
    Filed: May 30, 2006
    Publication date: March 29, 2007
    Applicants: FUJITSU LIMITED, INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION
    Inventor: Tsunehiro Hato
  • Publication number: 20070052441
    Abstract: A superconducting circuit includes a first transformer to produce a first alternating-current output at a secondary-side inductor, a second transformer to produce a second alternating-current output at a secondary-side inductor, a first pulse generating circuit to produce a single flux quantum pulse responsive to the first alternating-current output, a second pulse generating circuit to produce a single flux quantum pulse responsive to the second alternating-current output, and a confluence buffer circuit to merge the single flux quantum pulses from the pulse generating circuits, wherein each of the pulse generating circuits includes a superconducting loop including the secondary-side inductor, a first Josephson junction situated in the superconducting loop to generate the single flux quantum pulse, and a second Josephson junction situated in the superconducting loop, a threshold value of the second Josephson junction for an electric current flowing through the secondary-side inductor being different from tha
    Type: Application
    Filed: September 1, 2006
    Publication date: March 8, 2007
    Applicants: FUJITSU LIMITED,, INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION,
    Inventors: Atsushi Taguchi, Takuya Himi, Hideo Suzuki, Akira Yoshida, Keiichi Tanabe
  • Publication number: 20070049097
    Abstract: A circuit includes a latch circuit including a Josephson junction and configured to perform a latch operation based on a hysteresis characteristic in response to a single flux quantum, a load circuit including load inductance and load resistance and coupled to an output of the latch circuit, and a reset circuit provided between the output of the latch circuit and the load circuit and configured to reset the latch circuit a predetermined time after the latch operation by the latch circuit, wherein the Josephson junction is driven by a direct current.
    Type: Application
    Filed: September 21, 2006
    Publication date: March 1, 2007
    Applicants: FUJITSU LIMITED, INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION
    Inventors: Satoru Hirano, Hideo Suzuki, Keiichi Tanabe, Akira Yoshida, Tsunehiro Hato, Michitaka Maruyama
  • Patent number: 7160820
    Abstract: There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.
    Type: Grant
    Filed: May 15, 2002
    Date of Patent: January 9, 2007
    Assignees: International Superconductivity Technology Center, the Juridical Foundation, Fujikura Ltd.
    Inventors: Toshihiro Suga, Yasuji Yamada, Toshihiko Maeda, Seok Beom Kim, Haruhiko Kurosaki, Yutaka Yamada, Izumi Hirabayashi, Yasuhiro Iijima, Tomonori Watanabe, Hisashi Yoshino, Koji Muranaka
  • Publication number: 20060247131
    Abstract: At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.
    Type: Application
    Filed: January 13, 2006
    Publication date: November 2, 2006
    Applicants: FUJITSU LIMITED, INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION
    Inventors: Masahiro Horibe, Hideo Suzuki, Yoshihiro Ishimaru, Hironori Wakana, Keiichi Tanabe
  • Patent number: 7129870
    Abstract: A circuit includes a latch circuit including a Josephson junction and configured to perform a latch operation based on a hysteresis characteristic in response to a single flux quantum, a load circuit including load inductance and load resistance and coupled to an output of the latch circuit, and a reset circuit provided between the output of the latch circuit and the load circuit and configured to reset the latch circuit a predetermined time after the latch operation by the latch circuit, wherein the Josephson junction is driven by a direct current.
    Type: Grant
    Filed: August 27, 2004
    Date of Patent: October 31, 2006
    Assignees: Fujitsu Limited, International SuperConductivity Technology Center, The Juridical Foundation
    Inventors: Satoru Hirano, Hideo Suzuki, Keiichi Tanabe, Akira Yoshida, Tsunehiro Hato, Michitaka Maruyama