Abstract: The present invention is related to the realization of a simplified bottom electrode stack for ferroelectric memory cells. More particularly, the invention is related to ferroelectric memory cells wherein the ferroelectric capacitor is positioned directly on top of a contact plug.
Type:
Grant
Filed:
November 8, 2002
Date of Patent:
April 26, 2005
Assignees:
Interuniversitair Microelektronica Centrum vzw (IMEC vzw), STMicroelectronics