Patents Assigned to IPEC Precision, Inc.
  • Patent number: 6275770
    Abstract: In the measurement of the surface of a wafer mounted on a mounting device, a method of removing the errors induced by the mounting device from the measurement data. The method includes the steps of 1) measuring a plurality of points on the surface to obtain a first matrix which contains the device induced errors and the proper surface of the object; 2) rotating the object independently of the mounting device; 3) measuring the rotated object to obtain a second matrix which contains the device induced errors and the proper surface of the object as transformed by a rotation matrix; 4) obtaining the difference of the second matrix and the first matrix thereby eliminating the device induced error; and 5) applying the inverses of LU matrices on the difference of the rotation matrix and an identity matrix to obtain the proper surface. In step 5, the process involves flipping the wafer and measuring the surface as flipped.
    Type: Grant
    Filed: May 27, 1999
    Date of Patent: August 14, 2001
    Assignee: IPEC Precision Inc.
    Inventor: Azat M. Latypov
  • Patent number: 6242926
    Abstract: A method and apparatus for moving an article relative to and between a pair of distance sensing probes of a thickness measuring apparatus which are spaced apart a known distance D is described. In the method, the article is moved relative to and between the pair of probes in at least one direction in a plane normal to a common measurement axis Ac between the probes. A distance a along the common measurement axis Ac between the first probe and a point on the surface of the article nearest to the first probe of the pair that intersects the common measurement axis Ac is measured. A similar distance b between the second probe and the article is measured.
    Type: Grant
    Filed: January 12, 1999
    Date of Patent: June 5, 2001
    Assignee: IPEC Precision, Inc.
    Inventors: George J. Gardopee, Anthony M. Ledger, Alexander A. Gomez
  • Patent number: 6105534
    Abstract: An apparatus for processing substrates with a plasma jet with increased throughput is described. The apparatus comprises at least two carrousels for holding a plurality of substrates. Each of the carrousels includes a rotatable angle drive having a rotation axis Da, a plurality of arms extending radially from the angle drive and a plurality of rotatable substrate holders. Each of the substrate holders is connected to one of the arms, each of the rotatable substrate holders has a rotation axis Ha positioned at a distance R from the rotation axis Da of the rotatable angle drive. The carousel angle drive provides programmable motion of the substrates being treated relative to a plasma jet generator. The plasma jet generator is movable from a first position Z.sub.1 adjacent to the first carousel to a second position Z.sub.2 adjacent to the second carousel. While the substrates on the first carousel are being treated by the plasma jet, the substrates on the second carousel can be loaded or unloaded.
    Type: Grant
    Filed: November 25, 1998
    Date of Patent: August 22, 2000
    Assignee: IPEC Precision, Inc.
    Inventors: Oleg Siniaguine, Iskander Tokmouline
  • Patent number: 6099056
    Abstract: A holder for wafer-like articles is formed by providing a platform having a wafer-like article facing surface that includes at least one annular groove therein. The annular groove has a ceiling surface therein which is provided with an opening. A gas conducting conduit is connected to the opening. A gas, which introduced into the conduit, exits the conduit through the opening. By choosing a particular orientation of the conduit relative to the annular groove, the gas exiting the opening can be caused to circulate in a clockwise or counter clockwise fashion. The circular flow of gas causes the formation of a vortex adjacent to the article facing surface. A wafer-like article may be held in a suspended state adjacent to the wafer-like article facing surface without contact by the vortex and the gas flowing between the wafer-like article and the article facing surface.
    Type: Grant
    Filed: November 25, 1998
    Date of Patent: August 8, 2000
    Assignee: IPEC Precision, Inc.
    Inventors: Oleg Siniaguine, George Steinberg
  • Patent number: 6040548
    Abstract: A plasma jet generator apparatus enabling effective deflection of the generated plasma jet is described. The apparatus has an electrode chamber having a gas inlet and an outlet and an electrode positioned therein defining an electrode axis. A pair of magnetic deflection systems for deflecting the direction of the plasma flowing from the electrode axis are provided. The magnetic deflection systems are formed from pole pairs which are distributed about the electrode axis such that two magnetic fields that are substantially perpendicular to each other can be generated to deflect the plasma away from the electrode axis.
    Type: Grant
    Filed: November 25, 1998
    Date of Patent: March 21, 2000
    Assignee: IPEC Precision, Inc.
    Inventor: Oleg Siniaguine
  • Patent number: 5700297
    Abstract: An apparatus (40) for providing consistent, non-jamming registration of a notched semiconductor wafer (46) undergoing multiple sequential process work includes a plate (41) upon which the wafer (46) is laid flat. The notch (45) of the notched semiconductor wafer (46) is registered against a first roller (42) that is fixedly mounted to the plate (41). A second roller (43), also fixedly mounted to the plate (41), registers a first point (47) along the circumference of the wafer (46). A third roller (48) is fixedly mounted to a bracket (50) that is movable approximately along the radius of the wafer (46). A force (52) is applied to this bracket (50) resulting in the third roller (48) applying a force against the wafer (46). This resultant force, coupled with the rotating capability of the rollers (42,43,48), allows the wafer (46) to rotate into a proper registration position.
    Type: Grant
    Filed: February 20, 1996
    Date of Patent: December 23, 1997
    Assignee: IPEC Precision, Inc.
    Inventor: Joseph F. Vollaro
  • Patent number: 5688415
    Abstract: A system for the formation of circuit patterns on a large flat panel display (78) using plasma assisted chemical etching to achieve a uniform or controllably nonuniform etch depth over the entire area of the display. An overlying film (60) is provided on a large flat panel display substrate (12) with a photolithographic mask (62) overlying the film and having a predetermined pattern of openings (64) therethrough. The substrate is placed adjacent a plasma etching tool which has a projected area which is smaller than the area of the surface of the substrate. The etching tool is scanned across the surface of the substrate to transfer the pattern of the photolithographic mask into the film on the surface thereof. Thereafter, the photolithographic mask is removed from the surface of the overlying film.
    Type: Grant
    Filed: May 30, 1995
    Date of Patent: November 18, 1997
    Assignee: Ipec Precision, Inc.
    Inventors: David Bollinger, Jim Nester