Abstract: Provided is a transient voltage suppression device including a power supply terminal, a ground terminal, a Zener diode, a diode string, and an isolation device. The Zener diode is coupled between the power supply terminal and the ground terminal, and a node is between the Zener diode and the power supply terminal. The diode string has a first terminal, a second terminal, and an input/output (I/O) terminal. The second terminal is coupled to the ground terminal. The isolation device is coupled between the node and the first terminal. When an abnormal current flows through the isolation device and an energy of the abnormal current per unit time exceeds a preset value of the isolation device, the isolation device blocks a path of the abnormal current.

Abstract: A transient voltage suppression device including a substrate of a first conductivity type, a first well of a second conductivity type, a first anode, a first cathode, and a first trigger node is provided. The first well is disposed in the substrate. The first anode is disposed in the substrate outside the first well and includes a second doped region of the second conductivity type and a third doped region of the first conductivity type disposed between the second doped region and the first doped region. The first trigger node is disposed between the first anode and the first cathode, and includes a fourth region of the first conductivity type disposed in the substrate and a fifth doped region of the second conductivity type at least partially disposed in the first well and disposed between the fourth doped region and the third doped region.

Abstract: Provided is a semiconductor device with a diode and a silicon controlled rectifier (SCR) including a substrate having a first conductivity type, a well region having a second conductivity type, a first doped region having the first conductivity type, and a second doped region having the second conductivity type. The well region is disposed in the substrate. The first doped region is disposed in the substrate. The second doped region is disposed in the substrate. The well region and the first doped region form a first PN junction, the well region and the substrate form a second PN junction, and the substrate and the second doped region form a third junction. The first, second, and third PN junctions form the SCR, and the first doped region and the third PN junction form the diode.