Abstract: A semiconductor wafer structure having a device layer, an insulating layer, and a substrate which is capable of supporting increased semiconductor device densities or increased semiconductor device power. One or more of the layers includes an isotopically enriched semiconductor material having a higher thermal conductivity than semiconductor material having naturally occurring isotopic ratios. The wafer structure may be formed by various techniques, such as wafer bonding, and deposition techniques.

Abstract: The present invention provides a method and apparatus for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separation layer is formed inside a donor wafer by trapping hydrogen into a preformed, buried defect-rich layer preferably obtained by implanting a low dose of light ions through a protective layer deeply into this donor wafer. The donor wafer is then bonded to a second wafer and then split at the separation layer using a splicing apparatus. The invention also provides a “Wide Area Ion Source” (WAIS) that performs both implants in a very cost effective manner.

Abstract: The present invention provides improved semiconductor wafer structures having isotopically-enriched layers and methods of making the same.

Abstract: The invention is directed to luminescent materials containing isotopically-enriched atomic elements and methods of making these luminescent materials. Individual embodiments of the invention include isotopically-enriched ZnO:Zn, ZnS:Cu:Cl, Zn2SiO4:Mn, Y2O2S:Eu, Gd2O2S:Tb and CaWO4 phosphors as well as methods of synthesizing these luminescent materials using isotopically-enriched starting materials.

Abstract: The invention is directed to semiconductor wafer structures having increased thermal conductivity over conventional semiconductor wafer designs due to the inclusion of an isotopically-enriched material on at least one surface of the wafer substrate. The isotopically-enriched material may be isotopically-enriched silicon, germanium, silicon-germanium alloys, gallium arsenide, aluminum gallium arsenide, gallium nitride, gallium phosphide, gallium indium nitride, indium phosphide or combinations and alloys of these materials. In another embodiment, the substrate is removed from the wafer structure to leave a top semiconductor layer on a layer of isotopically-enriched materials with no underlying substrate.

Abstract: The present invention is directed to isotopically enriched optical materials and methods of producing the same. The optical materials provide high isotopic purity silica, calcium, zinc, gallium and germanium materials with increased resistance to optical damage which can be used alone or in combination with other means of preventing damage to decrease lens degradation caused by energy-induced compaction during use.