Abstract: An image acquisition device includes a single sensor having organic photodetectors, an angular filter, and a color filter. The color filter has one or a plurality of first portions adapted to give way to at least one wavelength in the visible range, and one or a plurality of second portions filtering wavelengths outside of red and/or near infrared. The second portion has a surface area approximately equal to a surface area of one of the photodetectors or a surface area greater than or equal to the surface area of four of the photodetectors.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters. The image sensor further includes first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum.

Abstract: A matrix-array detector having: an array of pixels arranged in a matrix along rows and down columns, each pixel for generating a signal according to a physical effect; a signal generator for generating two clock signals that are phase-shifted relative to one another; and a row-addressing device including a shift register, the shift register including a plurality of stages arranged in a cascade, each stage for receiving, in alternation from one stage to another, one clock signal from the two clock signals, and delivering an intermediate output signal that takes a high value and a low value allowing the pixels of the row to be activated and to be deactivated, respectively. The signal generator is also for generating a third clock signal.

Abstract: An image sensor includes organic photodetectors and an angular filter less than 20 ?m away from the photodetectors. Further, a method of manufacturing an image sensor includes the forming of organic photodetectors and of an angular filter less than 20 ?m away from the photodetectors.

Abstract: A device includes a display screen and an image sensor. A first electromagnetic shielding layer permeable to light is arranged between active portions of the display screen and active portions of the image sensor.

Abstract: An image sensor includes an array of readout circuits in non-organic technology and photodiodes made of organic materials.

Abstract: A fingerprint recognition system, includes a touch surface configured so as to provide location information for at least one contact point (PCO) of a finger having a fingerprint in contact with the touch surface, wherein the system comprises: a TFT panel, arranged underneath the touch surface, comprising a detection array comprising M rows at least some of which comprise detection cells for detecting an image representative of the fingerprint, a row-addressing system being integrated into the array, and configured so as to activate, row after row, the detection cells of a corresponding row in a scanning direction of the rows, a calculation device, configured so as to receive the location information and so as to command the addressing system to address the array starting from an address range (ZA) grouping together a subset of rows from among the M rows of the array, and determined on the basis of the location information.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.

Abstract: An infrared photodetector including a stack of layers on a substrate having an active area made of organic semiconductor materials capable of converting an infrared radiation into an electric signal and including, in said stack and/or on the substrate, a single layer at least partially filtering visible light.

Abstract: An electronic device includes a substrate, a first oxygen- and water-tight protection layer covering the substrate, at least one electronic component located on the first protection layer and having at least one organic semiconductor region, an oxygen- and water-tight encapsulation layer, the oxygen- and water-tight encapsulation layer having an epoxy or acrylate glue totally covering the organic semiconductor region, a second oxygen- and water-tight protection layer totally covering the encapsulation layer, and a support layer covering the second oxygen- and water-tight protection layer.

Abstract: A device for detecting an electromagnetic radiation has at least one photodetector including an organic diode and an organic photodiode formed in a same stack of semiconductor layers, the organic photodiode receiving the radiation. The photodetector further includes at least one screen which is opaque to the radiation and screens the portion of the stack corresponding to the diode.

Abstract: A display system including a display screen having first and second display sub-pixels where each first display sub-pixel includes a first light-emitting component emitting a first radiation and covered with a first colored filter and first conductive tracks and where each second display sub-pixel includes a second light-emitting component emitting a second radiation and covered with a second colored filter and second conductive tracks. The display system further includes an image sensor detecting the first or second radiation or a third radiation. The first display sub-pixels include first elements absorbing the first radiation and the second radiation and covering the first conductive tracks. The first absorbing elements and/or the first colored filter delimit a first passageway along the stacking direction for the first, second, or third radiation.

Abstract: An image acquisition system includes a source of a radiation, an image sensor including an array of photodetectors capable of detecting the radiation and including a surface, and an angular filter, covering the sensor, and capable of blocking the rays of the radiation having an incidence relative to a direction orthogonal to the surface greater than a threshold and of giving way to at least certain rays of the radiation having an incidence relative to a direction orthogonal to the surface smaller than the threshold.

Abstract: A matrix-array optoelectronic device includes a substrate on which a matrix array of what are called bottom electrodes is deposited; an active structure, which is preferably continuous and organic, arranged above the matrix-array of bottom electrodes, the structure being suitable for detecting light; and at least one what is called top electrode lying above the active structure, the top electrode being transparent to the light emitted or detected by the active structure; and at least one conductive element that is borne by the substrate without interposition of the active structure and that is connected to the top electrode by at least one vertical interconnection, the conductive element having an electrical conductivity greater than that of the top electrode. The device may also comprise a layer made of scintillator material, the layer being fastened to the top electrode, so as to form an x-ray imager.

Abstract: A photoresistor comprises two electrodes connected by a photosensitive layer of the photoresistor, and at least one additional layer which is in contact with the photosensitive layer in order to influence the behavior of the photoresistor regarding carrier collection between the two electrodes, in order to improve the sensitivity of the photoresistor.

Abstract: A display and detection system including an image sensor, a display screen and an antireflection system covering the display screen and the image sensor, such an antireflection system including an electrically-controllable rectilinear polarizer.

Abstract: An optoelectronic device includes a stack of layers that are arranged on an electrically insulating substrate, including at least one cathode made of a material of work function ?1; one electron-collecting layer that is arranged above the cathode and that is made of a material of work function ?2 and of sheet resistance R; and one active layer comprising at least one p-type organic semiconductor the energy level of which is HO1, wherein the work function ?2 of the electron-collecting layer and the energy level HO1 of the active layer form a potential barrier able to block the injection of holes from the cathode into the active layer; and the sheet resistance R of the electron-collecting layer is higher than or equal to 108?.

Abstract: A photoresistor comprises two electrodes connected by a photosensitive layer of the photoresistor, and at least one additional layer which is in contact with the photosensitive layer in order to influence the behavior of the photoresistor regarding carrier collection between the two electrodes, in order to improve the sensitivity of the photoresistor.

Abstract: A process for producing a stack of a first electrode/active layer/second electrode, which stack is intended for an electronic device, in particular an organic photodetector or an organic solar cell, the process comprises the following steps: (a) depositing a first conductor layer on the front side of a substrate, in order to form the first electrode; and (b) depositing an active layer taking the form of a thin organic semiconductor layer, this layer including discontinuous zones; wherein this process further comprises the following steps: (d) depositing a resist layer on that side of the stack which is opposite the substrate, which is at least partially transparent; (e) exposing the resist layer via the back side of the substrate; (f) developing the resist layer; and (g) depositing a second conductor layer in order to form the conductive second electrode.

Abstract: A display system including a display screen having first and second display sub-pixels where each first display sub-pixel includes a first light-emitting component emitting a first radiation and covered with a first colored filter and first conductive tracks and where each second display sub-pixel includes a second light-emitting component emitting a second radiation and covered with a second colored filter and second conductive tracks. The display system further includes an image sensor detecting the first or second radiation or a third radiation. The first display sub-pixels include first elements absorbing the first radiation and the second radiation and covering the first conductive tracks. The first absorbing elements and/or the first colored filter delimit a first passageway along the stacking direction for the first, second, or third radiation.