Patents Assigned to Japan Solar Energy Co., Ltd.
  • Solar cell manufacturing method
    Patent number: 4640001
    Abstract: Solar cell manufacturing method in which a silicon wafer is coated with an antireflection coating of silicon nitride by means of plasma CVD deposition with the silicon wafer kept at a temperature between 250.degree. C. and 600.degree. C. The coating of silicon nitride at such a high temperature results in a decrease in the recombination speed of the minority carriers produced in the silicon wafer during time of light incidence. The conversion efficiency is thus increased to a value ranging from 11.04% to 12.56%.
    Type: Grant
    Filed: December 20, 1984
    Date of Patent: February 3, 1987
    Assignee: Japan Solar Energy Co., Ltd.
    Inventors: Sakae Koiwai, Keizo Asaoka, Katsuhiko Shirasawa, Hiroyuki Watanabe, Junichi Honda