Abstract: A method for manufacturing a semiconductor device includes providing a substrate upon which the semiconductor device is to be disposed, heating the substrate to a first temperature that exceeds at least one of a softening point or glass transition temperature of the substrate, and depositing a polysilicon layer onto the substrate. A semiconductor device includes a substrate having at least one of a softening point, Ts, that is less than 600 degrees Celsius and a polysilicon layer disposed on an upper surface of the substrate such that the polysilicon layer abuts the substrate.

Abstract: A system includes input and output sets processing chambers. The processing chambers of each of the input set and the output set are fluidly coupled and linearly aligned with each other along corresponding input and output directions. The processing chambers process and move a device between the processing chambers along corresponding input and output directions. The processing chambers of the input set separately process the device when the device is located in each of the processing chambers of the input set. The processing chambers of the output set separately process the device when the device is located in each of the processing chambers of the output set.