Abstract: Disclosed is a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a drift region on a substrate, a well region on the drift region, a source-end doped region in the well region, a drain-end doped region on the drift region, and a gate structure which is located between a source end and a drain end, located at a position of the well region, and forms a channel region in the well region. The source-end doped region comprises a first doped region and a second doped region with opposite doping types, the channel region connects the first doped region and the drift region. The first doped region and the second doped region of the source end are equivalently close to the gate structure, a distance between the second doped region and a PN junction surface formed by the drift region and the well region is reduced.

Abstract: Disclosed is a semiconductor device and a manufacturing method, comprising: successively forming a pad oxide layer and a silicon nitride layer on a substrate; etching the silicon nitride layer into a plurality of segments; forming an oxide layer, having an up-and-down wavy shape, by performing a traditional thermal growth field oxygen method on the obtained semiconductor device by use of the plurality of segments serving as forming-assisted structures; performing traditional processes on the obtained semiconductor device having an up-and-down wavy semiconductor surface, to form a gate oxide layer, a polysilicon layer, and to form a source region and a drain region by implantation, thus the semiconductor device comprises a channel region with an up-and-down wavy shaped can be manufactured.