Patents Assigned to Kabushiki Kaisha Daini Sekiosha
  • Semiconductor integrated driving circuit including C-MOS and junction FET's
    Patent number: 4246498
    Abstract: A semiconductor integrated driving circuit including a junction FET and a C-MOS FET fabricated on a common semiconductor substrate. The junction FET is switched between conductive and non-conductive states for controlling and supplying a high driving current to a high current load element.
    Type: Grant
    Filed: May 4, 1978
    Date of Patent: January 20, 1981
    Assignee: Kabushiki Kaisha Daini Sekiosha
    Inventor: Kazuhiro Asano