Abstract: According to an embodiment, an optical apparatus includes an illumination unit, an imaging unit and a processing unit. The illumination unit emits a first ray having a first wavelength and a second ray having a second wavelength different from the first wavelength to an object. The imaging unit includes a first pixel which receives the first ray emitted to the object and a second pixel which receives the second ray emitted to the object to capture an image based on the first ray received by the first pixel and the second ray received by the second pixel. The processing unit calculates a first ray direction of the first ray and a second ray direction of the second ray based on the image captured by the imaging unit.

Abstract: According to one embodiment, a magnetic recording/reproducing device comprises a magnetic head including an assist element and configured to perform assist recording by applying assist power to the assist element, a rotation driver configured to perform rotation drive of the magnetic recording medium, a rotation number controller, and an assist power controller. The assist recording is performed under a first condition including a first rotation number and a first assist power, or under a second condition including a second rotation number which is different from the first rotation number and a second assist power which is different from the first assist power.

Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween, first to third control electrodes inside the semiconductor part, and first to third interconnects. The first and second control electrodes are arranged along a front surface of the semiconductor part. The third control electrodes are provided between the first electrode and the first and second electrodes, respectively. The first and second interconnect are electrically connected to the first and second control electrodes, respectively. The third interconnect is electrically connected to the third control electrodes. The semiconductor layer includes first and third layers of a first conductivity type and a second layer of a second conductivity type. The second layer is provided between the first layer and the second electrode. The third layer is provided between the second layer and the second electrode. The second layer faces the first and second control electrodes via insulating portions.

Abstract: According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N (0<x1?1), a second nitride region including Alx2Ga1-x2N (0<x2<1, x2<x1), and a third nitride region. The second nitride region is between the first nitride region and the third nitride region. The third nitride region includes Al, Ga, and N. The third nitride region does not include carbon, alternatively a third carbon concentration in the third nitride region is lower than a second carbon concentration in the second nitride region.

Abstract: According to one embodiment, an information processing apparatus includes a processor. The processor is configured to receive, from a client terminal, a first query to request a result of a join operation process on first and second tables, create a second query to a first database management device based on the first query, receive the first table from the first database management device by performing a process on the second query, create a third query to a second database management device based on the first query and the first table, receive a part of a second table from the second database management device by performing a process on the third query, and transmit, to the client terminal, a response to the first query based on the part of the second table.

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; a gate electrode extending in a first direction; a silicon carbide layer between the first electrode and the second electrode and including a first silicon carbide region of a first conductive type having a first region facing the gate electrode and a second region in contact with the first electrode, a second silicon carbide region of a second conductive type, and a third silicon carbide region of a second conductive type, the first region being interposed between the second silicon carbide region and the third silicon carbide region. A first width of the first region in a second direction perpendicular to the first direction is 0.5 ?m or more than and 1.2 ?m or less. A second width of the second region in the second direction 0.5 ?m or more than and 1.5 ?m or less.

Abstract: According to one embodiment, in a magnetic disk, a plurality of first servo sectors is arranged at intervals in the circumferential direction. Each of the plurality of first servo sectors includes a first area and a second area. First information including a preamble, a servo mark, and a Gray code is written in the first area. The second area is disposed after the first area in a write and read direction along the circumferential direction, and second information including a burst pattern is written in the second area. The plurality of first servo sectors includes a plurality of second servo sectors and a plurality of third servo sectors. The circumferential length of a first area included in each of the plurality of third servo sectors is longer than the circumferential length of a first area included in each of the plurality of second servo sectors.

Abstract: A quantum cascade laser includes light-emitting quantum well layers configured to emit infrared laser light by an intersubband transition; and injection quantum well layers configured to relax carrier energy. The light-emitting quantum well layers and the injection quantum well layers are stacked alternately. The injection quantum well layers relax the energy of carriers injected from the light-emitting quantum well layers, respectively. The light-emitting quantum well layers and the injection quantum well layers including barrier layers. At least one barrier layer includes first and second regions of a first ternary compound semiconductor, and a binary compound semiconductor thin film. The binary compound semiconductor thin film is provided between the first and second regions. The first ternary compound semiconductor includes Group III atoms and a Group V atom. The binary compound semiconductor thin film includes one Group III atom of the first ternary compound semiconductor and the Group V atom.

Abstract: According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, a photoelectric conversion layer located between the first conductive layer and the second conductive layer. The photoelectric conversion layer includes Sn and Pb. The photoelectric conversion layer includes a first partial region, a second partial region between the first partial region and the second conductive layer, and a third partial region between the second partial region and the second conductive layer. The first partial region includes a first Sn concentration and a first Pb concentration. The second partial region includes at least one of a second Sn concentration or a second Pb concentration. The second Sn concentration is less than the first Sn concentration. The second Pb concentration is greater than the first Pb concentration. The third partial region includes Sn, oxygen, and Pb.

Abstract: The present embodiment provides a compound represented by the formula (1): Q-CHR2??(1) (Q is a nitrogen-containing aliphatic group containing two or more tertiary nitrogens but no oxygen, and R is an aliphatic group containing a biodegradable group). From the compound in combination with other lipids such as a lipid capable of reducing aggregation, lipid particles can be formed. Further, the compound can be used for a pharmaceutical composition to deliver an activator into cells.

Abstract: A temporary substrate adhesive according to an embodiment includes a silane coupling agent and a photobase generator, but does not include a resin.

Abstract: A water electrolysis device includes: an anode; a cathode; an electrolyte membrane between the anode and the cathode; a first circulation flow path connecting a anode supply flow path and a anode discharge flow path; a second circulation flow path connected in parallel with the first circulation flow path; an ion filter in a middle of the second circulation flow path and to remove metal ions in the anode solution; a metal supply source to supply metal ions into the anode solution; a first valve in a middle of the first circulation flow path; a second valve in a middle of the second circulation flow path; a third valve in a middle of the metal supply flow path; a sensor to measure concentration of metal ions in the anode solution; and a controller to control opening and closing of each valve, according to the measured concentration of the metal ions.

Abstract: An electrode according to an embodiment includes a support and a catalyst layer including a sheet layer and a gap layer stacked alternately. Cracks or/and holes exist in the catalyst layer.

Abstract: According to one embodiment, a chemical sensor including a nucleic acid probe for capturing a target substance, a sensor element that has a surface on which the nucleic acid probe is immobilized, and a liquid film that covers the sensor element is provided.

Abstract: An ammonia manufacturing apparatus of an embodiment includes: an electrochemical reaction cell including: a first reaction tank in which a reduction electrode is arranged and gaseous nitrogen is supplied; a second reaction tank in which an oxidation electrode is arranged and an electrolytic solution containing water or water vapor is supplied; and a diaphragm provided between the first reaction tank and the second reaction tank. In the ammonia manufacturing apparatus of the embodiment, the reduction electrode includes a reduction catalyst that reduces nitrogen to produce ammonia, a porous carbon material that supports the reduction catalyst, and an organic polymer material that binds the porous carbon material. The porous carbon material has pores with a BET average pore size of 1 nm or more and 15 nm or less.

Abstract: An electrolytic device includes: a humidifier to humidify a cathode gas; a cathode discharge flow path through which a cathode fluid flows; an anode collector to separate an anode fluid into an anode discharge liquid and an anode exhaust gas; a first cooler to cool the anode exhaust gas to condense water vapor in the anode exhaust gas to produce a anode condensed water; a first flow path connecting the anode collector and an anode supply flow path, the first flow path through which the anode solution flows from the anode collector to the anode supply flow path; a second flow path through which the anode condensed water flows from the condensed water collector to the humidifier; and a first heat exchange structure to exchange heat between the anode solution through the first flow path and the anode condensed water through the second flow path.

Abstract: An inspection apparatus of an embodiment includes a rotor image-pickup unit for picking up an image of a rotor using a rotor image-pickup device in the air gap between the rotor and a stator. The rotor image-pickup device includes: a carriage casing; a camera; an image-pickup position changing part; and an image-pickup direction changing part. The camera is installed in the carriage casing, and picks up an image of a ventilation hole of the rotor in the air gap. The image-pickup position changing part is installed in the carriage casing, and changes an image-pickup position of the camera by moving the carriage casing in a circumferential direction of the rotor in the air gap. The image-pickup direction changing part is installed in the carriage casing, and changes an image-pickup direction of the camera to an inclined angle to a radial direction of the rotor in the air gap.

Abstract: According to one embodiment, a sensor device is a sensor device that detects an acetyl compound in a sample and includes a storage unit that stores a sample, a sensor section that comes into contact with the sample in the storage unit and detects a change in ion density, and an amino compound fixed to the sensor section.

Abstract: An electrode according to an embodiment includes a support, an intermediate layer including carbon particles and resin on the support, and a catalyst layer on the intermediate layer. A thickness of the intermediate layer is 70 [?m] or more and 300 [?m] or less.

Abstract: An electrode for electrochemical reaction device of an embodiment includes: a substrate; and a catalyst lamination provided on the substrate, and having a plurality of catalyst layers, and void layers respectively arranged between the plurality of catalyst layers adjacent to each other. The plurality of catalyst layers include a first catalyst layer arranged at a position close to the substrate and having a first thickness, and a second catalyst layer arranged at a position separated from the substrate and having a second thickness that is smaller than the first thickness.