Patents Assigned to Kagaku Gijutsu Sinkou Jigyo Dan
  • Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
    Patent number: 6019837
    Abstract: A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.
    Type: Grant
    Filed: November 25, 1997
    Date of Patent: February 1, 2000
    Assignees: Komatsu Electronic Metals Co., Ltd., Mitsubishi Materials Silicon Corporation, Kagaku Gijutsu Sinkou Jigyo Dan, Toshiba Ceramics Co., Ltd.
    Inventors: Susumu Maeda, Keisei Abe, Kazutaka Terashima, Hideo Nakanishi
  • Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
    Patent number: 6004393
    Abstract: A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.
    Type: Grant
    Filed: January 22, 1999
    Date of Patent: December 21, 1999
    Assignees: Komatsu Electronic Metals Co., Ltd., Mitsubishi Materials Silicon Corporation, Kagaku Gijutsu Sinkou Jigyo Dan, Toshiba Ceramics Co., Ltd.
    Inventors: Susumu Maeda, Keisei Abe, Kazutaka Terashima, Hideo Nakanishi