Abstract: In one embodiment of this invention, the apparatus for sputter deposition within an evacuated volume comprises a compact gridless ion source into which an ionizable gas is introduced and from which ions leave with directed energies at or near the sputtering threshold and a sputter target near that source, biased negative relative to the surrounding vacuum enclosure, and located within the beam of ions leaving that source. Particles sputtered from the target are deposited on a deposition substrate spaced from both the ion source and the sputter target. An energetic beam of electrons can be generated by the incident ions striking the negatively biased sputter target and the deposition substrate is located either within or outside of this beam, depending on whether the net effect of bombardment by energetic electrons is beneficial or detrimental to that particular deposition process.

Abstract: In one embodiment of the present invention, the ion optics for use with an ion source have first and second electrically conductive grids having mutually aligned respective pluralities of apertures through which ions may be accelerated and wherein each has an integral peripheral portion. There is also a support member. There are first and second series of seats around the respective peripheral portions of the first and second grids. A plurality of first spherical insulators are distributed between seats of the first and second series, thereby establishing a predetermined distance between the grids while still enabling radial movement between their peripheral portions. There are third and fourth series of seats around the support member and the peripheral portion of the second grid, respectively, with seats of the fourth series displaced from those of the second series in the same grid.

Abstract: In accordance with one specific embodiment of the present invention, the ion assisted deposition source for thin films comprises an axially symmetric discharge region into which an ionizable gas is introduced, a sputter target at one end of that region, an axially symmetric magnetic field within and extending out the opposite and open end of that region, an anode around the circumference of that region, and an electron emitting cathode located near the open end of that region. Particles are sputtered from the sputter target, pass through the discharge region, and are deposited on a deposition substrate located exterior of both the discharge region and the deposition source. A beam of energetic ions from the discharge region bombards the film being deposited to improve the adhesion, density, and other properties of that film.

Abstract: Ion-beam probes of the planar, screened, and multilayer types are shown and described. These probes can detect the arrival of energetic ions and, in the latter type, also detect the arrival of energetic neutral molecules. A specific improvement is the use of a multilayer collection surface behind an aperture to measure the angular distribution of the etching contributions of energetic ions and/or energetic neutral molecules. After use, this multilayer collection surface provides a permanent record of the measurement. The improvement is also suitable for the adverse thermal and ion-etching environment of an energetic ion beam. In one embodiment, the aperture size and distance from the collection surface are such that a theoretical analysis of etch depth behind a straight-edge mask can be used to analyze the experimental results. The etch contour can be accurately reproduced from the measurement of half-maximum half angle, as long as the assumed distribution is incorporated in the measurement process.

Abstract: A pair of dissimilarly-sized electrodes are driven by a radiofrequency source to create a plasma. A magnetic field is oriented to be parallel to a surface area on the smaller electrode. The field strength increases to either side of that smaller electrode. As shown, ions are electrostatically accelerated out of the plasma, but they instead may be accelerated magnetically, electrons may in the alternative be extracted or there may be no accelerating mechanism.

Abstract: A pair of dissimilarly-sized electrodes are driven by a radiofrequency source to create a plasma. A magnetic field is oriented to be parallel to a surface area on the smaller electrode. The field strength increases to either side of that smaller electrode. As shown, ions are electrostatically accelerated out of the plasma, but they instead may be accelerated magnetically, electrons may in the alternative be extracted or there may be no accelerating mechanism.

Abstract: A broad-beam electron source has a chamber into which is introduced an ionizing gas. Electrons are emitted between a cathode and an anode assembly to ionize that gas. The electrons within the plasma are drawn outwardly from the chamber through an apertured wall, which constitutes a screen, and thereafter are accelerated toward a target in a well-directed beam. A comparatively copious supply of electrons is developed, while yet requiring only low voltages in connection with its generation and resulting in correspondingly low electron energies. Ions produced external to the electron source itself are utilized to assist in neutralizing the charge density of the electron beam in order to help maintain its definition. For insulative targets, secondarily emitted electrons permit conservation of surface charge.