Abstract: The present invention provides a CMP abrasive pad conditioner, comprising a bottom substrate; an intermediate layer located on the bottom substrate, the intermediate layer including a hollow portion and an annular portion surrounding the hollow portion, the annular portion being provided with a plurality of bumps; and a diamond film located on the intermediate layer, and forming a plurality of abrasive projections corresponding to the bumps of the intermediate layer; in this case, a top surface of the abrasive projections is formed with a patterned configuration and the top surface is provided with a center line average roughness (Ra) between 2 and 20.

Abstract: A chemical mechanical polishing (abbreviated as CMP) conditioner comprises a bottom substrate, an intermediate substrate and a diamond film The intermediate substrate is provided on the bottom substrate. The intermediate substrate comprises a hollow portion, an annular portion surrounding the hollow portion, and at least one projecting ring projecting out of the annular portion away from the bottom substrate. The projecting ring comprises a plurality of bumps arranged to be spaced apart from each other along an annulus region. The bumps are extended in a radial direction of the intermediate substrate. The diamond film is provided on the intermediate substrate. The diamond film is allowed for conforming to the bumps, so as to form a plurality of the abrasive projections.