Abstract: Accelerometers are described herein that have RMS outputs. For instance, an example accelerometer may include a MEMS device and an ASIC. The MEMS device includes a structure having an attribute that changes in response to acceleration of an object. The ASIC determines acceleration of the object based at least in part on changes in the attribute. The ASIC includes analog circuitry, an ADC, and firmware. The analog circuitry measures the changes in the attribute and generates analog signals that represent the changes. The ADC converts the analog signals to digital signals. The firmware includes RMS firmware. The RMS firmware performs an RMS calculation on a representation of the digital signals to provide an RMS value that represents an amount of the acceleration of the object.

Abstract: A micro-electromechanical system (MEMS) device comprises a fixed portion and a proofmass suspended by at least one composite beam. The composite beam is cantilevered relative to the fixed portion and extends between a first end that is integrally formed with the fixed portion and a second distal end. The composite beam comprises an insulator having a top surface and at least two side surfaces; a conductor extending away from the fixed portion and surrounding at least a portion of the insulator; and a second conductor positioned adjacent to the top surface of the conductor and extending parallel with the insulator away from the fixed portion. The second conductor is separated from the first conductor to provide a low parasitic conductance of the composite beam.

Abstract: A micro-electromechanical system (MEMS) device includes a substrate and a beam suspended relative to a surface of the substrate. The substrate includes a buried insulator layer and a cavity. The beam includes a first portion and a second portion that are separated by an isolation joint. The cavity separates the surface of the substrate from the beam.

Abstract: A MEMS includes, in part, a parallel plate capacitor, a proofmass adapted to be displaced by a first distance from a rest state in response to a first voltage applied to the capacitor, and a piezoelectric material adapted to generate a second voltage in response to an external force applied to the MEMS. The second voltage causes the MEMS to transition from a standby mode to an active mode of operation. The proofmass is displaced by a second distance in response to the external force thereby causing the piezoelectric material to generate the second voltage. A spring couples the proofmass to the piezoelectric material, and a transistor turns on in response to the second voltage thereby causing the MEMS to transition to the active mode of operation. The proofmass returns to the rest state when the MEMS is in the active mode of operation.

Abstract: A MEMS device includes, in part, first and second conductive semiconductor substrates, an insulating material disposed between the semiconductor substrates, a cavity formed in the second semiconductor substrate, and at least first and second drive masses each of which includes a multitude of beams etched from the first semiconductor substrate and is adapted to move in the cavity in response to an applied force. At least a first portion of the first substrate is adapted to move in response to the applied force and causes the at least first and second drive mass to be in electrical communication with the first substrate. The device may further include, in part, a coupling spring disposed between and in electrical communication with the first and second drive masses. The coupling spring is adapted to provide electrical communication between a second portion of the first substrate and the first and second drive masses.

Abstract: Disclosed is a method of forming an interconnect in a substrate having a first surface and a second surface. The method includes forming an insulating structure abutting the first surface and defining a closed loop around a via in the substrate and forming an insulating region abutting the second surface such that the insulating region contacts the insulating structure and separates the via from a bulk region of the substrate. Forming the insulating structure includes etching the substrate beginning from the first surface to form a trench, filling the trench to form a seam portion, and converting a first portion of the substrate to a first solid portion to form the closed loop.

Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.

Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.

Abstract: Techniques are described herein that perform pressure sensing using pressure sensor(s) that include deformable pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. A deformable pressure vessel is a pressure vessel that has at least one curved portion that is configured to structurally deform (e.g., bend, shear, elongate, etc.) based on a pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel.

Abstract: Disclosed are systems, methods, and computer program products for electronic systems with through-substrate interconnects and mems device. An interconnect formed in a substrate having a first surface and a second surface, the interconnect includes: a bulk region; a via extending from the first surface to the second surface; an insulating structure extending through the first surface into the substrate and defining a closed loop around the via, wherein the insulating structure comprises a seam portion separated by at least one solid portion; and an insulating region extending from the insulating structure toward the second surface, the insulating region separating the via from the bulk region, wherein the insulating structure and insulating region collectively provide electrical isolation between the via and the bulk region.

Abstract: A method of fabricating a semiconductor device, includes, in part, growing a first layer of oxide on a surface of a first semiconductor substrate, forming a layer of insulating material on the oxide layer, patterning and etching the insulating material and the first oxide layer to form a multitude of oxide-insulator structures and further to expose the surface of the semiconductor substrate, growing a second layer of oxide in the exposed surface of the semiconductor substrate, and removing the second layer of oxide thereby to form a cavity in which a MEMS device is formed. The process of growing oxide in the exposed surface of the cavity and removing this oxide may be repeated until the cavity depth reaches a predefined value. Optionally, a multitude of bump stops is formed in the cavity.

Abstract: A method of processing a semiconductor substrate having a first conductivity type includes, in part, forming a first implant region of a second conductivity type in the semiconductor substrate where the first implant region is characterized by a first depth, forming a second implant region of the first conductivity type in the semiconductor substrate where the second implant region is characterized by a second depth smaller than the first depth, forming a porous layer within the semiconductor substrate where the porous layer is adjacent the first implant region, and growing an epitaxial layer on the semiconductor substrate thereby causing the porous layer to collapse and form a cavity.

Abstract: A gyroscope includes a resonator, a transducer, and a comparator. The comparator is designed to receive an input signal from the transducer and compare the input signal with a reference signal to produce an output signal. Rising and falling edge transitions of the output signal are substantially synchronized with a motion of the resonator along a sense-axis of the transducer.

Abstract: A calibration unit, system, and method for calibrating a device under test are provided. The calibration unit, system, and method use a single axis rotational unit to calibrate devices under test on a test head. The single axis rotation unit is configured to extend at an angle from a known axis. The test head can be designed in the shape of a frustum with multiple sides. The calibration unit, system, and method can use combinations of gravitational excitation, Helmholtz coil excitation, and rotational rate excitation for calibrating the device under test. The calibration unit, system, and method can calibrate a 3 degree for freedom or higher MEMS devices.

Abstract: Techniques are described herein that perform pressure sensing using pressure sensor(s) that include deformable pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. A deformable pressure vessel is a pressure vessel that has at least one curved portion that is configured to structurally deform (e.g., bend, shear, elongate, etc.) based on a pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel.

Abstract: A system and method for estimating angular velocity are provided. The system and method use an accelerometer and magnetometer to estimate an angular velocity in place of a gyroscope in 9-axis sensor fusion to estimate angular orientation. The final angular velocity estimate is constructed from two partially independent angular velocity estimates, one using only magnetometer measurements and the other using only accelerometer measurements. The unobservable portion of each partial angular velocity estimate is provided by a projection from a third complete estimate that uses both accelerometer and magnetometer data.

Abstract: Techniques are described herein that perform capacitance-based pressure sensing using pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. The void has a shape that is configured to change based on a change of pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel. The pressure vessel may be formed in the shape of an enclosed loop (e.g., along a path that is perpendicular to the cross section), resulting in a looped pressure vessel. For instance, an end of the pressure vessel may be connected to another end of the pressure vessel to form the enclosed loop.

Abstract: Techniques are described herein that perform capacitance-based pressure sensing using pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. The void has a shape that is configured to change based on a change of pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel. The pressure vessel may be formed in the shape of an enclosed loop (e.g., along a path that is perpendicular to the cross section), resulting in a looped pressure vessel. For instance, an end of the pressure vessel may be connected to another end of the pressure vessel to form the enclosed loop.

Abstract: A micro-electromechanical system (MEMS) device can include a substrate and a first beam suspended relative to a substrate surface. The first beam can include a first portion and a second portion that are separated by an isolation joint made of an insulative material. The first and second portions can each include a first semiconductor and a first dielectric layer. The MEMS device can also include a second beam suspended relative to the substrate surface. The second beam can include a second semiconductor and a second dielectric layer to promote curvature of the second beam. The MEMS device can also include a third beam suspended relative to the substrate surface. The third beam consists essentially of a first material. The second beam is configured to move relative to the third beam in response to an acceleration along an axis perpendicular to the surface of the substrate.

Abstract: A method for compensating for a misalignment angle between an accelerometer and a magnetometer includes applying a corrective rotation to collected accelerometer data or magnetometer data based on an estimated misalignment angle between an axis of the accelerometer and an axis of the magnetometer. The method further includes estimating a gravity vector using the corrected accelerometer data and estimating a magnetic field vector using the corrected magnetometer data. Additionally, the method includes calculating a characteristic that is a function of a calculated angle between the estimated gravity vector and the estimated magnetic field. The method also includes calculating a figure of merit over the plurality of times that is a function of the characteristic, and dynamically adjusting the estimated misalignment angle during ordinary use of the electronic device such that the figure of merit converges to a value as the electronic device rotates.