Abstract: A current limiting device using a superconductor limits a current flowing throu A c5 V pV:a current limiting coil, which mangetically couples to the superconductor. A control coil is provided to magnetically couple with the current limiting coil when the superconductor is switched to a normal conduction state. A variable control impedance is connected to the control coil to adjust a control current flowing through the control coil. The current limiting impedance value of the current limiting coil is adjusted by the value of the control impedance to obtain an adjustable value of the current flowing through the current limiting coil.

Abstract: Disclosed is a photosensitive resin composition comprising an aqueous dispersion or emulsion comprising components (1), (3) and (4) as indispensable components and optionally the following component (2):(1) a water-soluble saponified vinyl acetate polymer to which a styrylpyridinium or styrylquinolinium group has been added;(2) a water-dispersible or hydrophobic polymer;(3) a photo-polymerizable unsaturated compound having an ethylenically unsaturated group; and(4) a photo-polymerization initiator.This composition has excellent dispersion stability, sensitivity and resolving power and produces a hardened product having good solvent resistance, water resistance and abrasion resistance.

Abstract: An amorphous semiconductor solar cell which comprises a glass substrate and a transparent electrode coated on the substrate. The device also comprises an amorphous semiconductor layer on the transparent electrode, and a rear electrode on the amorphous layer, wherein the average grain diameter of the surface of the transparent electrode ranges from 0.1 .mu.m to 2.5 .mu.m.

Abstract: A thermal shield structure with ceramic blocks for protecting high-temperature-exposed wall surface in which wedge-shaped supporting members and wedge-shaped members to be supported, respectively provided on the wall surface and ceramics blocks as a plurality of pairs of wedge-groove couplings, are engaged with each other to cover the wall surface with the ceramic blocks. In accordance with the invention, a gap small enough to prevent mutual disengagement of each pair of the wedge-shaped supporting member and the wedge-shaped supported member is provided therebetween to permit movement of the ceramic blocks towards the wall surface. A passage for an air supply into each wedge-shaped supporting member is provided so that each wedge-shaped supported member is urged by the pressure of supplied air to be retained in the wedge-shaped supporting member, whereby the ceramic blocks are held on the wall surface.

Abstract: A semiconductor ring laser apparatus is provided which comprises a semiconductor laser element having electrical terminals and optical terminals. An electrical power supply means is coupled to the electrical terminals for applying a voltage thereto and optical means are optically coupled to the optical terminals of the semiconductor laser element. The optical means form resonant ring optical paths in clockwise and counterclockwise directions for the light which is emitted by the semiconductor. Detector means are provided which are coupled to said electrical terminals for detecting voltage variations thereon caused by the rotation of the apparatus.

Abstract: Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reactively with the solid body through a dielectric member, whereby a solid state element having a negative differential conductivity is obtained. Such a type of negative-resistance solid state element, together with its various modes of embodimental construction disclosed herein, affords a superior solid state element which is applicable to amplifiers, oscillators, logic memories, and the like of millimeter or submillimeter bands.

Abstract: Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reactively with the solid body through a dielectric member, whereby a solid state element having a negative differential conductivity is obtained. Such a type of negative-resistance solid state element, together with its various modes of embodimental construction disclosed herein, affords a superior solid state element which is applicable to amplifiers, oscillators, and the like of millimeter or submillimeter bands.

Abstract: In a magnetic bubble module comprising magnetic bubble chips disposed on substrates and driving coils surrounding the magnetic bubble chips, at least one of the substrates extends from the inside to the outside of the coils and serves as a heat transfer plate. The heat transfer plate includes at least one metal foil having a thickness smaller than a skin depth of the metal.

Abstract: A magnetic bubble information writing device in which a conductor loop is disposed on the magnetic bubble propagation circuit and in which magnetic bubbles are generated by sending pulse current through the conductor loop, the device having a means which after having sent the bubble generating pulse current through the conductor loop, sends pulse current for annihilating stray bubbles through the same, the stray bubble annihilating pulse current having a polarity opposite to that of the bubble generating pulse current.

Abstract: An improved negative resistance element is disclosed, the element being composed of a semiconductor element and having an effective negative electroconductivity in a high electric field, the element being constructed so that the sectional area of the region near the anode is made larger than the sectional area of the other regions of the element, whereby the distribution of the high electric field in the interior of the element is made uniform along the element, that is, from the region near the anode toward the region near the cathode to thereby broaden the region having an effective negative resistance. Furthermore, and in an alternative embodiment, there is disclosed a negative resistance element in whch the region near the cathode besides the region near the anode is also made to have a larger sectional area than the other regions of the element.

Abstract: In an element of an integrated circuit including a transistor and a "majority carrier diode" at least one terminal of which is connected to the base or collector of said transistor, the "majority carrier diode" is laid out in a transistor portion of the integrated circuit to be surrounded by a part of base region extended to the surface of the semiconductor body, so that the paths for the load current of the transistor and the diode current are separated from each other, whereby a high speed operation at a heavy load current is made possible and/or so that reliability of said majority carrier diode is increased.

Abstract: Disclosed herein is an improved field-effect transistor, having its effective base width determined by the impurity diffusion length or by a difference between impurity diffusion lengths for providing a reduced parasitic capacitance between gate and drain, and/or between gate or drain and other electrode. Disclosed also is a construction for effectively leading out an electrode from the base region and or source region, and methods adapted to manufacture the above-mentioned field-effect transistor.

Abstract: A high frequency insulated gate field effect transistor comprises a semiconductor body of one type of conductivity, a base region of the same type of conductivity as the semiconductor body but with a higher impurity concentration than the body, and drain and source regions of the opposite type of conductivity. A portion of the base region is disposed between the drain region and the source region and the impurity concentration of the base region is reduced from the source region toward the drain region and is less at its junction with the drain region than that of the drain region. Such transistor can be incorporated in an integrated circuit as an amplifier transistor with a depletion type transistor as a load transistor. A common region serves both as a drain region of the amplifier transistor and a source region of the load transistor.