Abstract: A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.
Type:
Application
Filed:
March 1, 2013
Publication date:
October 17, 2013
Applicants:
KOOKMIN UNIVERSITY ACADEMY COOPERATION FOUNDATION, SAMSUNG DISPLAY CO., LTD.
Inventors:
Jihun Lim, Byung Du Ahn, Gun Hee Kim, Junhyun Park, Jehun Lee, Jaewoo Park, Dae Hwan Kim, Hyunkwang Jung, Jaehyeong Kim