Patents Assigned to L'Air Liquide, Société Anonyme pour l'Edute ed l'Exploitation des Procédés Georges Claude
  • Patent number: 11699584
    Abstract: Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.
    Type: Grant
    Filed: March 10, 2021
    Date of Patent: July 11, 2023
    Assignee: L'Air Liquide, Société Anonyme pour l'Edute ed l'Exploitation des Procédés Georges Claude
    Inventors: Jean-Marc Girard, Peng Zhang, Antonio Sanchez, Manish Khandelwal, Gennadiy Itov, Reno Pesaresi