Abstract: Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.
Type:
Grant
Filed:
March 10, 2021
Date of Patent:
July 11, 2023
Assignee:
L'Air Liquide, Société Anonyme pour l'Edute ed l'Exploitation des Procédés Georges Claude