Abstract: A biasing method to obtain improved performance of Field Effect Devices is disclosed. In accordance with the method, the nominal operating point for a Field Effect Device is chosen so that the electric field in the drain depletion region is biased in the carrier partial velocity saturation regime. With this biasing, the transconductance and output conductance of the field effect device have the same current dependence so that the ratio of these two parameters is independent of current. Thus the gain of the device is independent of bias source noise so that the bias source noise does not modulate the input signal. In addition, if a device is biased in accordance with the present invention, the drain noise modulation of the edge of the drain depletion zone emulates that created by a gate input, so that the depletion zone noise may be considered as a gate input noise, and the transconductance is not intermodulated by that noise.

Abstract: Field effect transconductance amplifiers having improved linearity and noise rejection characteristics to provide an amplifier output having excellent temporal coherence with the input signal are disclosed. The amplifiers utilize a series connection of two field effect devices, actual or emulated, preferably appropriately biased in a carrier velocity limited region to maximize linearity of the output. A high level of rejection of power supply noise may be achieved by a third series field effect device. Various embodiments including high gain and power amplifier embodiments are disclosed.