Abstract: A free-standing microstructure may be formed from an engineered substrate including a first silicon layer, a second silicon layer, and an intermediate layer. The second silicon layer may include a monocrystalline silicon film. The intermediate layer may be between the first silicon layer and the second silicon layer. The intermediate layer may include a silicon- or germanium-based material having a different lattice constant than the first silicon layer or the second silicon layer. The intermediate layer of the free-standing microstructure may further include one or more voids wherein at least a portion of the silicon- or germanium-based material is absent between the first silicon layer and the second silicon layer.
Type:
Grant
Filed:
June 14, 2021
Date of Patent:
April 9, 2024
Assignee:
Lawrence Semiconductor Research Laboratory, Inc.
Abstract: Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.
Type:
Grant
Filed:
January 15, 1998
Date of Patent:
May 16, 2000
Assignees:
Lawrence Semiconductor Research Laboratory, Inc., The Regents of the University of California, The Arizona Board of Regents
Inventors:
McDonald Robinson, Richard C. Westhoff, Charles E. Hunt, Li Ling, Ziv Atzmon
Abstract: Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.
Type:
Grant
Filed:
December 6, 1995
Date of Patent:
May 25, 1999
Assignee:
Lawrence Semiconductor Research Laboratory, Inc.
Inventors:
McDonald Robinson, Richard C. Westhoff, Charles E. Hunt, Li Ling