Patents Assigned to LG Chem Investment, Ltd., a Korea corporation
  • Process for preparing insulating material having low dielectric constant
    Publication number: 20030216058
    Abstract: The present invention relates to low dielectric materials essential for a semiconductor having high density and high performance of the next generation, particularly to a process for preparing a porous interlayer insulating film having low dielectric constant containing pores with a size of a few nanometers or less.
    Type: Application
    Filed: May 28, 2003
    Publication date: November 20, 2003
    Applicant: LG Chem Investment, Ltd., a Korea corporation
    Inventors: Min-Jin Ko, Hye-Yeong Nam, Dong-Seok Shin, Myung-Sun Moon, Jung-Won Kang