Abstract: A silver-indium transient liquid phase method of bonding a semiconductor device and a heat-spreading mount, and a semiconductor structure having a silver-indium transient liquid phase bonding joint are provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.

Abstract: A semiconductor structure having a silver-indium transient liquid phase bonding joint is provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.

Abstract: A silver-indium transient liquid phase method of bonding a semiconductor device and a heat-spreading mount, and a semiconductor structure having a silver-indium transient liquid phase bonding joint are provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.