Abstract: An inverse diode die has a high reverse breakdown voltage, a short reverse recovery time Trr, and is rugged in terms of reverse breakdown voltage stability over long term use in hard commutation applications. The die has an unusually lightly doped bottomside P type anode region and also has an N? type drift region above it. Both regions are of bulk wafer material. An N+ type contact region extends down into the drift region. A topside metal electrode is on the contact region. A P type silicon peripheral sidewall region laterally rings around the drift region. A topside passivation layer rings around the topside electrode. A bottomside metal electrode is on the bottom of the die. The die has a deep layer of hydrogen ions that extends through the N? drift region. The die also has a shallow layer of ions. Both ion layers are implanted from the bottomside.

Abstract: A disconnect switch is disclosed with an integrated thermal breaker that can be disposed between a source of power and a circuit to be protected. The disconnect switch can comprise a housing, a first terminal coupled to a power source and a second terminal coupled to a load. The first terminal and the second terminal can be partially included in the housing. The disconnect switch comprises a bi-metal thermal conductive element made from at least two metal sheets with different thermal expansion coefficients and having a concave shape that engages the first and second terminals. Upon occurrence of an overload condition, heat flowing through the bi-metal thermal conductive element causes the concave shape to retract to a convex shape and disengage the bi-metal thermal conductive element from the first and the second terminals.